ABSTRACT In this paper we study the electronic and optical properties of (In0.5Ga0.5As)n/(InP)n superlattices, where the Ga0.5In0.5As alloy is described both through the virtual crystal approximation (VCA) and through an appropriate ordered ternary structure. By first-principles calculations of the dielectric tensor elements we address the issue of the giant polarization anisotropy of the optical absorption experimentally observed in these superlattices. The magnitude of the anisotropy depends on the splitting between the hole states at the valence band top which is due to the lowering of the overall symmetry to the C2v point group and it is greatly influenced by strain not only at the interfaces but also in the bulk alloy.
IN PLANE ANISOTROPY OF THE OPTICAL PROPERTIES OF (In0.5Ga0.5As)n/(InP)n SUPERLATTICES / Magri, Rita; Ossicini, Stefano. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - STAMPA. - 63:16(2001), pp. 165303-1-165303-9. [10.1103/PhysRevB.63.165303]
IN PLANE ANISOTROPY OF THE OPTICAL PROPERTIES OF (In0.5Ga0.5As)n/(InP)n SUPERLATTICES.
MAGRI, Rita;OSSICINI, Stefano
2001
Abstract
ABSTRACT In this paper we study the electronic and optical properties of (In0.5Ga0.5As)n/(InP)n superlattices, where the Ga0.5In0.5As alloy is described both through the virtual crystal approximation (VCA) and through an appropriate ordered ternary structure. By first-principles calculations of the dielectric tensor elements we address the issue of the giant polarization anisotropy of the optical absorption experimentally observed in these superlattices. The magnitude of the anisotropy depends on the splitting between the hole states at the valence band top which is due to the lowering of the overall symmetry to the C2v point group and it is greatly influenced by strain not only at the interfaces but also in the bulk alloy.
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