We suggest a model for the c(2 x 6) phase of the Sbstabilized GaSb(001) surface, whereby Sb atoms in the second layer are partially substituted by Ga. This ‘doping’ effect enables the surface to fulfil the electron counting rule whilst maintaining a reconstruction based on long dimer chains.Total energy calculations verify that the suggested reconstruction is relatively stable, and calculations of the reflectance anisotropy spectra confirm that it comprises a major component of the largely disordered surface
Structure and optical properties of the Sb-stabilized GaSb(001) surface / C., Hogan; Magri, Rita; R., Del Sole. - In: PHYSICA STATUS SOLIDI. C. - ISSN 1610-1642. - STAMPA. - 7:2(2010), pp. 177-180. (Intervento presentato al convegno 12th International Conference on the Formation of Semiconductor Interfaces: From Semiconductor to Nanoscience and Applications with Biology, ICFSI-12 tenutosi a Weimar, deu nel 2009) [10.1002/pssc.200982499].
Structure and optical properties of the Sb-stabilized GaSb(001) surface
MAGRI, Rita;
2010
Abstract
We suggest a model for the c(2 x 6) phase of the Sbstabilized GaSb(001) surface, whereby Sb atoms in the second layer are partially substituted by Ga. This ‘doping’ effect enables the surface to fulfil the electron counting rule whilst maintaining a reconstruction based on long dimer chains.Total energy calculations verify that the suggested reconstruction is relatively stable, and calculations of the reflectance anisotropy spectra confirm that it comprises a major component of the largely disordered surface
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