While (InAs)n/(GaSb)n (001) superlattices are semiconducting for nnc the InAs electron level eInAs is below the GaSb hole level hGaSb, so the system is converted to a nominal semimetal. At nonzero in-plane wave vectors (k|| [not equal] 0), however, the wave functions eInAs and hGaSb have the same symmetry, so they anticross. This opens up a "hybridization gap" at some k||=k*||. Using a pseudopotential plane-wave approach as well as a (pseudopotential fit) eight-band k·p approach, we predict the hybridization gap and its properties such as wave-function localization and out-of-plane dispersion. We find that recent model calculations underestimate this gap severely.
Anticrossing semiconducting band gap in nominally semimetallic InAs/GaSb superlattices / Magri, Rita; L. W., Wang; Alex, Zunger; I., Vurgaftman; AND J. R., Meyer. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - STAMPA. - 61:15(2000), pp. 10235-10241. [10.1103/PhysRevB.61.10235]
Anticrossing semiconducting band gap in nominally semimetallic InAs/GaSb superlattices
MAGRI, Rita;
2000
Abstract
While (InAs)n/(GaSb)n (001) superlattices are semiconducting for nnc the InAs electron level eInAs is below the GaSb hole level hGaSb, so the system is converted to a nominal semimetal. At nonzero in-plane wave vectors (k|| [not equal] 0), however, the wave functions eInAs and hGaSb have the same symmetry, so they anticross. This opens up a "hybridization gap" at some k||=k*||. Using a pseudopotential plane-wave approach as well as a (pseudopotential fit) eight-band k·p approach, we predict the hybridization gap and its properties such as wave-function localization and out-of-plane dispersion. We find that recent model calculations underestimate this gap severely.
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