BISI, Olmes
 Distribuzione geografica
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Continente #
NA - Nord America 9.359
EU - Europa 4.258
AS - Asia 931
Continente sconosciuto - Info sul continente non disponibili 6
OC - Oceania 5
SA - Sud America 5
Totale 14.564
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Nazione #
US - Stati Uniti d'America 9.341
GB - Regno Unito 2.039
SE - Svezia 751
DE - Germania 365
TR - Turchia 348
CN - Cina 341
UA - Ucraina 338
IT - Italia 283
FI - Finlandia 196
HK - Hong Kong 143
BG - Bulgaria 125
FR - Francia 55
BE - Belgio 34
IN - India 33
IR - Iran 30
IE - Irlanda 18
CA - Canada 14
JP - Giappone 13
NL - Olanda 9
RU - Federazione Russa 9
ES - Italia 7
RO - Romania 7
EU - Europa 6
MY - Malesia 6
SG - Singapore 6
CH - Svizzera 5
PL - Polonia 5
BZ - Belize 3
NZ - Nuova Zelanda 3
VN - Vietnam 3
AT - Austria 2
AU - Australia 2
EE - Estonia 2
IL - Israele 2
MD - Moldavia 2
AR - Argentina 1
BN - Brunei Darussalam 1
BO - Bolivia 1
BR - Brasile 1
CL - Cile 1
CZ - Repubblica Ceca 1
EC - Ecuador 1
IM - Isola di Man 1
KR - Corea 1
LI - Liechtenstein 1
LK - Sri Lanka 1
LU - Lussemburgo 1
MX - Messico 1
PH - Filippine 1
PK - Pakistan 1
PT - Portogallo 1
RS - Serbia 1
UZ - Uzbekistan 1
Totale 14.564
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Città #
Southend 1.805
Fairfield 1.209
Woodbridge 947
Chandler 855
Jacksonville 806
Houston 765
Ann Arbor 582
Ashburn 562
Seattle 438
Wilmington 422
Dearborn 389
Cambridge 372
Nyköping 350
Des Moines 252
Izmir 187
Hong Kong 143
Beijing 141
Modena 124
Sofia 124
Eugene 123
Princeton 123
San Diego 108
Helsinki 74
New York 47
Bremen 39
San Mateo 38
London 36
Grafing 35
Brussels 31
Augusta 28
Leawood 27
Milan 27
Shanghai 26
Boardman 25
Hefei 24
Ardabil 21
Norwalk 20
Redwood City 20
Dublin 18
Falls Church 17
Kunming 17
Indiana 16
Los Angeles 15
Nanjing 15
Auburn Hills 14
Verona 12
Rome 11
Guangzhou 10
Mumbai 10
Jinan 9
Monmouth Junction 9
Toronto 9
Hounslow 8
Kilburn 8
San Francisco 7
Bucharest 6
Shenyang 6
West Jordan 6
Hangzhou 5
Nanchang 5
Shimoayashi 5
Agliè 4
Andover 4
Dongguan 4
Pavullo Nel Frignano 4
San Jose 4
Barcelona 3
Belize City 3
Berlin 3
Bologna 3
Changsha 3
Dallas 3
Dong Ket 3
Duncan 3
Edinburgh 3
Fuzhou 3
Kish 3
Montreal 3
Moscow 3
Mountain View 3
Sabz 3
Shaoxing 3
Southwark 3
Suri 3
Zhengzhou 3
Zola Predosa 3
Zurich 3
Atlanta 2
Auckland 2
Belluno 2
Bergamo 2
Boulder 2
Catania 2
Chongqing 2
Collegno 2
Columbus 2
Correggio 2
Elk Grove 2
Forlì 2
Gif-sur-yvette 2
Totale 11.692
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Nome #
Electronic properties of clean (001) surfaces of Ir and Pt 207
The electronic and optical properties of silicon nanoclusters: absorption and emission 175
Electrical characterization of alloy thin films of VSi2 and V3Si 168
A self-consistent calculation of the electronic structure of thin copper films 165
Covalency on the adsorption of Na on Si(111) 163
First-Principles Study of Silicon Nanocrystals: Structural and Electronic Properties, Absorption, Emission, and Doping. 162
Ab-initio calculations of luminescence and optical gain properties in silicon nanostructures 158
Electrical and optical properties of silicide single crystals and thin films 157
Correlation effects in valence band spectra of Nickel Silicides 157
sp-d hybridization effects on the electronic structure of the (100) surface in Copper 156
A THEORETICAL STUDY OF THE ELECTRONIC STRUCTURE OF PD (111) CLEAN SURFACE 156
Formation energies of silicon nanocrystals: role of dimension and passivation 155
Gain theory and models in silicon nanostructures 154
Chemical bond and electronic states in calcium silicides: theory and comparison with synchrotron radiation photoemission 154
Absence of filled surface states in the s-p gap of clean (111) surface of Ag 154
Electronic properties of metal rich Au-Si compounds and interfaces 154
THE ELECTRONIC-PROPERTIES OF THE CAF2-SI(111) SYSTEM - FROM MONOLAYER COVERAGE TO SOLID SOLID INTERFACE 153
Electron states of ultrathin Pd and Cu films on (001) Ag. 153
Doping in silicon nanocrystals 153
The electronic structure of Au monolayer on (001) W 153
Epoca - Eccellenza nei Processi Organizzativi e nella Corporate Analysis 151
The luminescence transition in porous silicon: The nature of the electronic states 150
Ab-initio calculation of the optical properties of silicon quantum wires 149
Electronic, structural and optical properties of hydrogenated silicon nanocrystals: the role of the excited states 149
Formation energies of silicon nanocrystals: role of dimension and passivation 148
Electronic properties of Silicon - transition metal interface compounds 147
Ab-initio calculation of the electronic (valence and core) and optical properties of interfaces 146
Ab-initio Calculations Of The Electronic Properties of Silicon Nanocrystals: Absorption, Emission, Stokes Shift 146
Dispersion of surface bands in W(100) surface 146
X-ray absorption and emission from different atoms of the same compound: success and failure of the single-particle picture 145
W (111): angle-resolved photoemission from the clean and H2 - covered surface 144
Atomic intermixing and electronic interaction at the Pd - Si (111) interface 144
Electronic structure of Si(111)-NiSi2(111) A-type and B-type interfaces 142
Electronic structure and properties of Ni - Si (001) and Ni - Si (111) reactive interfaces 142
Role of three-body interactions in the calculator of the total energy and the shear modulus of hexagonal metals 142
Perturbative valence charge density of trigonal Se and Te 141
Auger Lineshape analysis of porous silicon: Experiment and theory 139
Initial formation of the CaF2 interface: a theoretical study 137
An experimental and theoretical study of the electronic structure of the W (111) surface 136
Electronic structure of Cr Silicides and Si-Cr interface reactions 136
Coulomb correlation in Chromium compounds 135
ELECTRONIC STATES AT THE (111) SURFACE OF NI DISILICIDE 134
Chemical bonding at the Si-metal interface: Si-Ni and Si-Cr 133
THE ELECTRONIC-PROPERTIES OF SI-NISI2(111) EPITAXIAL INTERFACES 133
The optical transition in porous Si: The effects of quantum confinement, surface states and hydrogen passivation 131
A Test Chip for the Development of Porous Silicon Light Emitting Diodes 131
Electron Bombardment Effects on Light Emitting Porous Silicon 129
Electronic structure of compounds at Platinum -Silicon interface 127
Accendiamo la mente per capire la luce: di tutto e di più sul filo invisibile che lega il mondo 127
Valence band and core lines investigation on the Ge-Au system by photoelectron spectroscopy with synchrotron radiation 127
Electron states and luminescence transition in porous silicon 127
Importance of Coulomb correlation in Silicide spectra 126
Chemical bonding and properties of Condensed Phases of Carbon and Silicon 124
The Ge/Au interface investigated with photoemission at the Cooper minimum 124
A theoretical study of ordered monolayer films of Copper 124
Role of the selfconsistency in the evaluation of the electronic structure of transition metal surfaces 124
Spectroscopic investigation of electroluminescent Porous Silicon 124
The electronic properties of Silicon - Silicide epitaxial interfaces 123
Light emitting porous silicon diode based on a silicon/porous silicon heterojunction 122
Empty electronic states of calcium silicides: an inverse photoemission investigation in the ultraviolet photon range 121
Electronic structure of Vanadium Silicides 120
Electronic structure of CaSi and CaSi2 118
Electronic Charge Trapping Effects in Porous Silicon 117
Surface electronic states at the (110) surfaces of III-V compounds 117
Theory of the Auger spectra of Ca-Si compounds 116
Electronic and structural properties of semiconductor-metal and semiconductor-insulator interfaces 116
Atelier "Raggio di luce" 116
A chi la vera Gloria? Le verità della Scienza sulla Luce 116
Porous Silicon and its application for Light Emitting Diodes 115
Porous silicon: A quantum sponge structure for silicon based optoelectronics 115
Electronic structure of Silicide - Silicon interfaces 114
Ab-initio Calculations Of The Electronic Properties of Hydrogenated and Oxidized Silicon Nanocrystrals: Ground and Excited States 114
Transition metal Silicides: aspects of the chemical bond and trends in the electronic structure 114
Ab-initio structural and electronic properties of hydrogenated silicon nanoclusters in their ground and excited state 114
Effects of chemical environment in the lineshape of Silicon LVV Auger spectra of Nickel Silicides 113
Partial screening in Ca Silicides measured by Ca 2 p electron-energy -loss spectroscopy 112
Linear-Combination-of-Atomic-Orbital description of the electron states at the (0001) surfaces of hexagonal-close-packed metals 111
Preface of the Proceedings of the 3rd International-Conference on the Formation of Semiconductor Interfaces - Rome, Italy, May 6-10, 1991 111
Optical properties of isolated and interacting silicon quantum wires 109
Luminescence in porous silicon: The role of confinement and passivation 109
Structural, electronic and optical properties of silicon nanoclusters: the role of the size and surface passivation 109
Electrical and optical properties of near-noble silicides 108
The electonic structure of the (100) surface of Copper 107
Theory of Core-level Shifts of Clean and Covered Surfaces 106
Porous Silicon 106
On the route towards efficient light emitting diodes based on porous Silicon 106
Selfconsistent LMTO calculation for semiconductor clean surfaces 105
Enhancement of spontaneous emission rates in all porous silicon optical microcavities 104
Surface electron states at the (110) surfaces of III-V semiconductors 102
Electrical transport properties of V3Si, V5Si3 and VSi2 thin films 101
NEXAFS measurement of the p-symmetry unoccupied states of silver, palladium and palladium silicide 101
Ca-silicides as prototypical systems for modelling the electron-states at the Si(111)/Yb interface: a Si- L2,3 Auger lineshape investigation 101
Silicon based microphotonic: from basics to applications 100
The electronic properties of the Si (111) - transition metals interfaces 99
Chemical bond and electronic states in the CaF2-Si(111) and Ca-Si(111) interfaces 99
First-principle calculation for the core level shifts of clean and covered surfaces 98
Induction-model analysis of Si-H stretching mode in Porous Silicon 98
Structural and electronic properties of CaF2-Si(111) interface 97
Silicon valence states in calcium silicides: A Si- L2,3 VV lineshape analysis 97
W(111) surface: an experimental and theoretical photoemission study 96
Totale 12.960
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Categoria #
all - tutte 50.810
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 50.810
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019972 0 0 0 0 0 0 0 0 0 0 486 486
2019/20203.177 268 252 134 238 338 399 541 242 320 109 165 171
2020/20212.185 209 71 178 179 233 121 179 291 107 247 262 108
2021/20221.992 18 279 181 187 59 124 136 80 211 121 345 251
2022/20232.234 259 229 158 199 231 508 21 237 249 17 66 60
2023/2024807 41 88 54 125 168 59 69 108 59 35 1 0
Totale 14.642