BISI, Olmes
 Distribuzione geografica
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Continente #
NA - Nord America 9.394
EU - Europa 4.309
AS - Asia 1.273
Continente sconosciuto - Info sul continente non disponibili 6
SA - Sud America 6
OC - Oceania 5
Totale 14.993
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Nazione #
US - Stati Uniti d'America 9.375
GB - Regno Unito 2.039
SE - Svezia 754
CN - Cina 429
DE - Germania 365
TR - Turchia 348
UA - Ucraina 338
IT - Italia 291
SG - Singapore 257
FI - Finlandia 196
HK - Hong Kong 143
BG - Bulgaria 125
FR - Francia 55
LT - Lituania 37
BE - Belgio 34
IN - India 33
IR - Iran 30
IE - Irlanda 18
CA - Canada 15
JP - Giappone 13
NL - Olanda 9
RU - Federazione Russa 9
ES - Italia 7
RO - Romania 7
EU - Europa 6
MY - Malesia 6
CH - Svizzera 5
PL - Polonia 5
CZ - Repubblica Ceca 4
BZ - Belize 3
NZ - Nuova Zelanda 3
VN - Vietnam 3
AT - Austria 2
AU - Australia 2
BR - Brasile 2
EE - Estonia 2
IL - Israele 2
MD - Moldavia 2
TW - Taiwan 2
AR - Argentina 1
BN - Brunei Darussalam 1
BO - Bolivia 1
CL - Cile 1
EC - Ecuador 1
ID - Indonesia 1
IM - Isola di Man 1
KR - Corea 1
LI - Liechtenstein 1
LK - Sri Lanka 1
LU - Lussemburgo 1
MX - Messico 1
PH - Filippine 1
PK - Pakistan 1
PT - Portogallo 1
RS - Serbia 1
UZ - Uzbekistan 1
Totale 14.993
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Città #
Southend 1.805
Fairfield 1.209
Woodbridge 947
Chandler 855
Jacksonville 806
Houston 765
Ann Arbor 582
Ashburn 571
Seattle 438
Wilmington 422
Dearborn 389
Cambridge 372
Nyköping 350
Des Moines 252
Izmir 187
Singapore 152
Beijing 144
Hong Kong 143
Modena 124
Sofia 124
Eugene 123
Princeton 123
San Diego 108
Helsinki 74
New York 47
Bremen 39
Shanghai 39
San Mateo 38
London 36
Grafing 35
Brussels 31
Milan 30
Boardman 29
Augusta 28
Leawood 27
Hefei 25
Ardabil 21
Norwalk 20
Redwood City 20
Dublin 18
Guangzhou 18
Falls Church 17
Kunming 17
Indiana 16
Los Angeles 15
Nanjing 15
Auburn Hills 14
Verona 12
Rome 11
Santa Clara 11
Mumbai 10
Jinan 9
Monmouth Junction 9
Toronto 9
Hounslow 8
Kilburn 8
San Francisco 7
Bucharest 6
Jiaxing 6
Shenyang 6
West Jordan 6
Changsha 5
Dallas 5
Hangzhou 5
Nanchang 5
Shimoayashi 5
Agliè 4
Andover 4
Bologna 4
Dongguan 4
Palma Campania 4
Pavullo Nel Frignano 4
San Jose 4
Barcelona 3
Belize City 3
Berlin 3
Dong Ket 3
Duncan 3
Edinburgh 3
Fuzhou 3
Kish 3
Montreal 3
Moscow 3
Mountain View 3
Sabz 3
Shaoxing 3
Southwark 3
Suri 3
Wuhan 3
Zhengzhou 3
Zola Predosa 3
Zurich 3
Atlanta 2
Auckland 2
Belluno 2
Bergamo 2
Boulder 2
Catania 2
Chizhou 2
Chongqing 2
Totale 11.904
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Nome #
Electronic properties of clean (001) surfaces of Ir and Pt 210
The electronic and optical properties of silicon nanoclusters: absorption and emission 179
Electrical characterization of alloy thin films of VSi2 and V3Si 171
A self-consistent calculation of the electronic structure of thin copper films 169
First-Principles Study of Silicon Nanocrystals: Structural and Electronic Properties, Absorption, Emission, and Doping. 168
Covalency on the adsorption of Na on Si(111) 164
Correlation effects in valence band spectra of Nickel Silicides 163
A THEORETICAL STUDY OF THE ELECTRONIC STRUCTURE OF PD (111) CLEAN SURFACE 161
Ab-initio calculations of luminescence and optical gain properties in silicon nanostructures 161
Formation energies of silicon nanocrystals: role of dimension and passivation 160
Electrical and optical properties of silicide single crystals and thin films 160
Epoca - Eccellenza nei Processi Organizzativi e nella Corporate Analysis 160
Chemical bond and electronic states in calcium silicides: theory and comparison with synchrotron radiation photoemission 159
Absence of filled surface states in the s-p gap of clean (111) surface of Ag 159
sp-d hybridization effects on the electronic structure of the (100) surface in Copper 158
Electronic properties of metal rich Au-Si compounds and interfaces 158
Gain theory and models in silicon nanostructures 157
Electron states of ultrathin Pd and Cu films on (001) Ag. 157
Doping in silicon nanocrystals 157
THE ELECTRONIC-PROPERTIES OF THE CAF2-SI(111) SYSTEM - FROM MONOLAYER COVERAGE TO SOLID SOLID INTERFACE 155
The electronic structure of Au monolayer on (001) W 155
Ab-initio calculation of the optical properties of silicon quantum wires 153
Formation energies of silicon nanocrystals: role of dimension and passivation 153
The luminescence transition in porous silicon: The nature of the electronic states 152
Dispersion of surface bands in W(100) surface 152
Electronic, structural and optical properties of hydrogenated silicon nanocrystals: the role of the excited states 152
Ab-initio calculation of the electronic (valence and core) and optical properties of interfaces 149
X-ray absorption and emission from different atoms of the same compound: success and failure of the single-particle picture 149
Ab-initio Calculations Of The Electronic Properties of Silicon Nanocrystals: Absorption, Emission, Stokes Shift 149
W (111): angle-resolved photoemission from the clean and H2 - covered surface 148
Electronic properties of Silicon - transition metal interface compounds 148
Atomic intermixing and electronic interaction at the Pd - Si (111) interface 148
Electronic structure of Si(111)-NiSi2(111) A-type and B-type interfaces 145
Electronic structure and properties of Ni - Si (001) and Ni - Si (111) reactive interfaces 145
Role of three-body interactions in the calculator of the total energy and the shear modulus of hexagonal metals 145
Perturbative valence charge density of trigonal Se and Te 143
Auger Lineshape analysis of porous silicon: Experiment and theory 142
Coulomb correlation in Chromium compounds 141
An experimental and theoretical study of the electronic structure of the W (111) surface 141
Initial formation of the CaF2 interface: a theoretical study 140
Electronic structure of Cr Silicides and Si-Cr interface reactions 140
Accendiamo la mente per capire la luce: di tutto e di più sul filo invisibile che lega il mondo 139
Chemical bonding at the Si-metal interface: Si-Ni and Si-Cr 138
ELECTRONIC STATES AT THE (111) SURFACE OF NI DISILICIDE 136
THE ELECTRONIC-PROPERTIES OF SI-NISI2(111) EPITAXIAL INTERFACES 136
A Test Chip for the Development of Porous Silicon Light Emitting Diodes 134
The optical transition in porous Si: The effects of quantum confinement, surface states and hydrogen passivation 132
Electron Bombardment Effects on Light Emitting Porous Silicon 132
Valence band and core lines investigation on the Ge-Au system by photoelectron spectroscopy with synchrotron radiation 132
Importance of Coulomb correlation in Silicide spectra 130
Electron states and luminescence transition in porous silicon 130
Electronic structure of compounds at Platinum -Silicon interface 129
A theoretical study of ordered monolayer films of Copper 128
Chemical bonding and properties of Condensed Phases of Carbon and Silicon 127
The Ge/Au interface investigated with photoemission at the Cooper minimum 127
Spectroscopic investigation of electroluminescent Porous Silicon 127
Ab-initio Calculations Of The Electronic Properties of Hydrogenated and Oxidized Silicon Nanocrystrals: Ground and Excited States 126
Role of the selfconsistency in the evaluation of the electronic structure of transition metal surfaces 126
Empty electronic states of calcium silicides: an inverse photoemission investigation in the ultraviolet photon range 125
The electronic properties of Silicon - Silicide epitaxial interfaces 125
Light emitting porous silicon diode based on a silicon/porous silicon heterojunction 124
Atelier "Raggio di luce" 124
A chi la vera Gloria? Le verità della Scienza sulla Luce 123
Electronic structure of Vanadium Silicides 122
Surface electronic states at the (110) surfaces of III-V compounds 120
Electronic Charge Trapping Effects in Porous Silicon 119
Theory of the Auger spectra of Ca-Si compounds 119
Electronic and structural properties of semiconductor-metal and semiconductor-insulator interfaces 119
Electronic structure of CaSi and CaSi2 119
Porous Silicon and its application for Light Emitting Diodes 118
Ab-initio structural and electronic properties of hydrogenated silicon nanoclusters in their ground and excited state 118
Effects of chemical environment in the lineshape of Silicon LVV Auger spectra of Nickel Silicides 117
Porous silicon: A quantum sponge structure for silicon based optoelectronics 117
Electronic structure of Silicide - Silicon interfaces 116
Transition metal Silicides: aspects of the chemical bond and trends in the electronic structure 116
Preface of the Proceedings of the 3rd International-Conference on the Formation of Semiconductor Interfaces - Rome, Italy, May 6-10, 1991 114
Partial screening in Ca Silicides measured by Ca 2 p electron-energy -loss spectroscopy 114
Linear-Combination-of-Atomic-Orbital description of the electron states at the (0001) surfaces of hexagonal-close-packed metals 113
Optical properties of isolated and interacting silicon quantum wires 112
Luminescence in porous silicon: The role of confinement and passivation 112
Structural, electronic and optical properties of silicon nanoclusters: the role of the size and surface passivation 112
Electrical and optical properties of near-noble silicides 112
The electonic structure of the (100) surface of Copper 111
Theory of Core-level Shifts of Clean and Covered Surfaces 109
On the route towards efficient light emitting diodes based on porous Silicon 109
Porous Silicon 108
Selfconsistent LMTO calculation for semiconductor clean surfaces 108
Electrical transport properties of V3Si, V5Si3 and VSi2 thin films 107
Enhancement of spontaneous emission rates in all porous silicon optical microcavities 107
NEXAFS measurement of the p-symmetry unoccupied states of silver, palladium and palladium silicide 106
Surface electron states at the (110) surfaces of III-V semiconductors 105
Ca-silicides as prototypical systems for modelling the electron-states at the Si(111)/Yb interface: a Si- L2,3 Auger lineshape investigation 105
Silicon based microphotonic: from basics to applications 104
Chemical bond and electronic states in the CaF2-Si(111) and Ca-Si(111) interfaces 104
Surface bands of Ga containing III-V compounds 102
Induction-model analysis of Si-H stretching mode in Porous Silicon 102
The electronic properties of the Si (111) - transition metals interfaces 102
First-principle calculation for the core level shifts of clean and covered surfaces 101
Structural and electronic properties of CaF2-Si(111) interface 100
Silicon valence states in calcium silicides: A Si- L2,3 VV lineshape analysis 100
Totale 13.325
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Categoria #
all - tutte 55.622
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 55.622
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20202.909 0 252 134 238 338 399 541 242 320 109 165 171
2020/20212.185 209 71 178 179 233 121 179 291 107 247 262 108
2021/20221.992 18 279 181 187 59 124 136 80 211 121 345 251
2022/20232.234 259 229 158 199 231 508 21 237 249 17 66 60
2023/2024981 41 88 54 125 168 59 69 108 59 35 75 100
2024/2025255 214 41 0 0 0 0 0 0 0 0 0 0
Totale 15.071