BISI, Olmes
 Distribuzione geografica
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Continente #
NA - Nord America 12.488
AS - Asia 5.399
EU - Europa 5.228
SA - Sud America 565
AF - Africa 57
Continente sconosciuto - Info sul continente non disponibili 7
OC - Oceania 6
Totale 23.750
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Nazione #
US - Stati Uniti d'America 12.403
GB - Regno Unito 2.327
CN - Cina 2.191
SG - Singapore 1.568
SE - Svezia 857
HK - Hong Kong 605
BR - Brasile 457
DE - Germania 427
IT - Italia 367
TR - Turchia 359
UA - Ucraina 353
FI - Finlandia 238
KR - Corea 230
RU - Federazione Russa 230
VN - Vietnam 165
BG - Bulgaria 128
IN - India 69
FR - Francia 68
CA - Canada 53
LT - Lituania 51
AR - Argentina 50
BE - Belgio 40
JP - Giappone 34
IR - Iran 30
PL - Polonia 28
NL - Olanda 25
ZA - Sudafrica 25
BD - Bangladesh 21
MX - Messico 21
EC - Ecuador 20
ES - Italia 20
IE - Irlanda 19
ID - Indonesia 17
IQ - Iraq 17
AE - Emirati Arabi Uniti 13
JO - Giordania 11
UZ - Uzbekistan 11
PK - Pakistan 10
VE - Venezuela 10
CO - Colombia 9
MA - Marocco 9
KE - Kenya 8
PY - Paraguay 8
CH - Svizzera 7
RO - Romania 7
EU - Europa 6
MY - Malesia 6
SA - Arabia Saudita 6
CZ - Repubblica Ceca 5
DK - Danimarca 5
EG - Egitto 5
PH - Filippine 5
AT - Austria 4
IL - Israele 4
JM - Giamaica 4
AU - Australia 3
BO - Bolivia 3
BZ - Belize 3
CL - Cile 3
DO - Repubblica Dominicana 3
HU - Ungheria 3
NZ - Nuova Zelanda 3
PE - Perù 3
PT - Portogallo 3
BN - Brunei Darussalam 2
CI - Costa d'Avorio 2
DZ - Algeria 2
EE - Estonia 2
GE - Georgia 2
KG - Kirghizistan 2
KW - Kuwait 2
KZ - Kazakistan 2
LB - Libano 2
LK - Sri Lanka 2
MD - Moldavia 2
NO - Norvegia 2
NP - Nepal 2
OM - Oman 2
QA - Qatar 2
RS - Serbia 2
TW - Taiwan 2
UY - Uruguay 2
ZM - Zambia 2
AL - Albania 1
AM - Armenia 1
AZ - Azerbaigian 1
BA - Bosnia-Erzegovina 1
BW - Botswana 1
BY - Bielorussia 1
CR - Costa Rica 1
CV - Capo Verde 1
CY - Cipro 1
IM - Isola di Man 1
LI - Liechtenstein 1
LU - Lussemburgo 1
MK - Macedonia 1
PS - Palestinian Territory 1
SK - Slovacchia (Repubblica Slovacca) 1
SO - Somalia 1
SY - Repubblica araba siriana 1
Totale 23.748
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Città #
Southend 1.805
Santa Clara 1.323
Fairfield 1.209
Hefei 1.072
Woodbridge 947
Singapore 921
Chandler 855
Jacksonville 810
Houston 781
Ashburn 780
Hong Kong 604
Ann Arbor 582
Seattle 443
Wilmington 427
Dearborn 389
Cambridge 372
Nyköping 350
Beijing 299
London 282
Des Moines 252
Seoul 228
Izmir 187
Los Angeles 158
Council Bluffs 131
Modena 129
Sofia 125
Eugene 123
Princeton 123
San Diego 110
Chicago 107
Helsinki 98
New York 96
The Dalles 93
Buffalo 73
Dallas 63
Shanghai 61
Moscow 57
Ho Chi Minh City 54
Munich 49
Columbus 45
Hanoi 40
São Paulo 40
Bremen 39
San Mateo 38
Brussels 37
Salt Lake City 36
Grafing 35
Guangzhou 35
Milan 32
Augusta 29
Boardman 29
Leawood 27
Montreal 22
Orem 22
Ardabil 21
Kent 21
Norwalk 21
Rome 21
Warsaw 21
Redwood City 20
Tokyo 20
Atlanta 19
Brooklyn 19
Dublin 19
Elk Grove Village 19
Johannesburg 18
Kunming 18
Toronto 18
Falls Church 17
Nanjing 17
Rio de Janeiro 17
San Jose 17
Turku 17
Indiana 16
Changsha 15
Auburn Hills 14
Detroit 14
Mumbai 14
Phoenix 14
Belo Horizonte 13
Brasília 13
Chennai 13
San Francisco 13
Stockholm 12
Verona 12
Amman 11
Denver 11
Poplar 11
Redondo Beach 11
Xi'an 11
Hillsboro 10
Jinan 10
Sterling 10
Zhengzhou 10
Boston 9
Monmouth Junction 9
Tashkent 9
Bologna 8
Buenos Aires 8
Frankfurt am Main 8
Totale 17.743
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Nome #
A self-consistent calculation of the electronic structure of thin copper films 308
Electronic properties of clean (001) surfaces of Ir and Pt 292
Accendiamo la mente per capire la luce: di tutto e di più sul filo invisibile che lega il mondo 291
Chemical bonding at the Si-metal interface: Si-Ni and Si-Cr 285
A THEORETICAL STUDY OF THE ELECTRONIC STRUCTURE OF PD (111) CLEAN SURFACE 283
Ab-initio Calculations Of The Electronic Properties of Silicon Nanocrystals: Absorption, Emission, Stokes Shift 280
Absence of filled surface states in the s-p gap of clean (111) surface of Ag 274
Ab-initio calculation of the optical properties of silicon quantum wires 274
Epoca - Eccellenza nei Processi Organizzativi e nella Corporate Analysis 272
Ab-initio calculation of the electronic (valence and core) and optical properties of interfaces 269
A chi la vera Gloria? Le verità della Scienza sulla Luce 269
A theoretical study of ordered monolayer films of Copper 262
An experimental and theoretical study of the electronic structure of the W (111) surface 262
Formation energies of silicon nanocrystals: role of dimension and passivation 261
The electronic and optical properties of silicon nanoclusters: absorption and emission 259
Atomic intermixing and electronic interaction at the Pd - Si (111) interface 259
Chemical bond and electronic states in calcium silicides: theory and comparison with synchrotron radiation photoemission 258
Correlation effects in valence band spectra of Nickel Silicides 251
Gain theory and models in silicon nanostructures 249
Coulomb correlation in Chromium compounds 248
Doping in silicon nanocrystals 247
Electronic properties of Silicon - transition metal interface compounds 246
Electron states of ultrathin Pd and Cu films on (001) Ag. 244
Electrical characterization of alloy thin films of VSi2 and V3Si 244
Ab-initio calculations of luminescence and optical gain properties in silicon nanostructures 244
Effects of chemical environment in the lineshape of Silicon LVV Auger spectra of Nickel Silicides 242
Ab-initio Calculations Of The Electronic Properties of Hydrogenated and Oxidized Silicon Nanocrystrals: Ground and Excited States 241
sp-d hybridization effects on the electronic structure of the (100) surface in Copper 240
A Test Chip for the Development of Porous Silicon Light Emitting Diodes 238
First-principles study of silicon nanocrystals: Structural and electronic properties, absorption, emission, and doping 237
W (111): angle-resolved photoemission from the clean and H2 - covered surface 236
Dispersion of surface bands in W(100) surface 235
Covalency on the adsorption of Na on Si(111) 234
The luminescence transition in porous silicon: The nature of the electronic states 230
Atelier "Raggio di luce" 230
Perturbative valence charge density of trigonal Se and Te 228
Ab-initio structural and electronic properties of hydrogenated silicon nanoclusters in their ground and excited state 227
Auger Lineshape analysis of porous silicon: Experiment and theory 226
Formation energies of silicon nanocrystals: role of dimension and passivation 226
Electrical and optical properties of silicide single crystals and thin films 222
The optical transition in porous Si: The effects of quantum confinement, surface states and hydrogen passivation 220
THE ELECTRONIC-PROPERTIES OF THE CAF2-SI(111) SYSTEM - FROM MONOLAYER COVERAGE TO SOLID SOLID INTERFACE 220
X-ray absorption and emission from different atoms of the same compound: success and failure of the single-particle picture 220
Electronic properties of metal rich Au-Si compounds and interfaces 220
Electronic, structural and optical properties of hydrogenated silicon nanocrystals: the role of the excited states 219
Electronic structure and properties of Ni - Si (001) and Ni - Si (111) reactive interfaces 216
Role of three-body interactions in the calculator of the total energy and the shear modulus of hexagonal metals 216
ELECTRONIC STATES AT THE (111) SURFACE OF NI DISILICIDE 210
Importance of Coulomb correlation in Silicide spectra 209
Role of the selfconsistency in the evaluation of the electronic structure of transition metal surfaces 207
Electrical transport properties of V3Si, V5Si3 and VSi2 thin films 205
Electronic structure of Si(111)-NiSi2(111) A-type and B-type interfaces 205
Porous silicon: A quantum sponge structure for silicon based optoelectronics 204
The electronic structure of Au monolayer on (001) W 204
Initial formation of the CaF2 interface: a theoretical study 200
Empty electronic states of calcium silicides: an inverse photoemission investigation in the ultraviolet photon range 200
Porous Silicon and its application for Light Emitting Diodes 195
Electron Bombardment Effects on Light Emitting Porous Silicon 194
Electronic structure of Cr Silicides and Si-Cr interface reactions 194
The Ge/Au interface investigated with photoemission at the Cooper minimum 193
Light emitting porous silicon diode based on a silicon/porous silicon heterojunction 190
Ca-silicides as prototypical systems for modelling the electron-states at the Si(111)/Yb interface: a Si- L2,3 Auger lineshape investigation 190
Chemical bonding and properties of Condensed Phases of Carbon and Silicon 187
Electronic structure of compounds at Platinum -Silicon interface 187
Electrical and structural characterization of Nb - Si thin film alloys 184
W(111) surface: an experimental and theoretical photoemission study 184
Electronic Charge Trapping Effects in Porous Silicon 184
Theory of the Auger spectra of Ca-Si compounds 184
THE ELECTRONIC-PROPERTIES OF SI-NISI2(111) EPITAXIAL INTERFACES 184
Valence band and core lines investigation on the Ge-Au system by photoelectron spectroscopy with synchrotron radiation 183
Electronic and structural properties of semiconductor-metal and semiconductor-insulator interfaces 181
Electronic structure of Vanadium Silicides 180
Electronic structure of Silicide - Silicon interfaces 180
Surface electronic states at the (110) surfaces of III-V compounds 179
Chemical bond and electronic states in the CaF2-Si(111) and Ca-Si(111) interfaces 179
Linear-Combination-of-Atomic-Orbital description of the electron states at the (0001) surfaces of hexagonal-close-packed metals 178
Theory of Core-level Shifts of Clean and Covered Surfaces 177
NEXAFS measurement of the p-symmetry unoccupied states of silver, palladium and palladium silicide 176
Spectroscopic investigation of electroluminescent Porous Silicon 176
First-principle calculation for the core level shifts of clean and covered surfaces 174
Confinement and passivation in isolated and coupled silicon quantum wires 173
Electrical and optical properties of near-noble silicides 173
Silicon based microphotonic: from basics to applications 172
Surface electron states at the (110) surfaces of III-V semiconductors 172
The electonic structure of the (100) surface of Copper 172
The electronic properties of Silicon - Silicide epitaxial interfaces 172
Surface bands of Ga containing III-V compounds 170
Electron states and luminescence transition in porous silicon 169
Surface bands in relaxed cleavage surface of GaP 168
Preface of the Proceedings of the 3rd International-Conference on the Formation of Semiconductor Interfaces - Rome, Italy, May 6-10, 1991 168
Structural, electronic and optical properties of silicon nanoclusters: the role of the size and surface passivation 167
Porous Silicon 166
Transition metal Silicides: aspects of the chemical bond and trends in the electronic structure 159
Electronic structure of CaSi and CaSi2 158
Silicon valence states in calcium silicides: A Si- L2,3 VV lineshape analysis 156
The electronic properties of the Si (111) - transition metals interfaces 154
Optical properties of isolated and interacting silicon quantum wires 151
Partial screening in Ca Silicides measured by Ca 2 p electron-energy -loss spectroscopy 151
Correlation and autoionization in Silicide Auger spectra 148
Luminescence in porous silicon: The role of confinement and passivation 148
Totale 21.178
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Categoria #
all - tutte 85.455
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 85.455
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.315 0 0 0 0 0 121 179 291 107 247 262 108
2021/20221.992 18 279 181 187 59 124 136 80 211 121 345 251
2022/20232.234 259 229 158 199 231 508 21 237 249 17 66 60
2023/2024981 41 88 54 125 168 59 69 108 59 35 75 100
2024/20254.800 214 59 121 257 1.050 667 287 255 419 322 580 569
2025/20264.212 632 506 788 774 886 626 0 0 0 0 0 0
Totale 23.828