BISI, Olmes
 Distribuzione geografica
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Continente #
NA - Nord America 15.436
AS - Asia 6.779
EU - Europa 5.793
SA - Sud America 723
AF - Africa 103
Continente sconosciuto - Info sul continente non disponibili 86
OC - Oceania 8
Totale 28.928
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Nazione #
US - Stati Uniti d'America 15.225
GB - Regno Unito 2.348
CN - Cina 2.292
SG - Singapore 1.967
SE - Svezia 859
HK - Hong Kong 694
VN - Vietnam 601
IT - Italia 590
BR - Brasile 553
DE - Germania 472
TR - Turchia 366
UA - Ucraina 363
FI - Finlandia 305
KR - Corea 270
RU - Federazione Russa 236
FR - Francia 188
BG - Bulgaria 134
BD - Bangladesh 128
CA - Canada 113
IN - India 113
AR - Argentina 62
LT - Lituania 51
JP - Giappone 49
BE - Belgio 42
IQ - Iraq 39
MX - Messico 38
PL - Polonia 37
ZA - Sudafrica 37
NL - Olanda 35
EC - Ecuador 31
ES - Italia 30
IR - Iran 30
PK - Pakistan 30
ID - Indonesia 27
AE - Emirati Arabi Uniti 22
CO - Colombia 22
IE - Irlanda 21
VE - Venezuela 21
PH - Filippine 20
MA - Marocco 17
UZ - Uzbekistan 16
JO - Giordania 14
CR - Costa Rica 13
IL - Israele 13
KE - Kenya 13
JM - Giamaica 12
SA - Arabia Saudita 12
CL - Cile 11
MY - Malesia 11
CH - Svizzera 10
PY - Paraguay 10
RO - Romania 10
TH - Thailandia 9
DZ - Algeria 8
EG - Egitto 8
AZ - Azerbaigian 7
CZ - Repubblica Ceca 7
EE - Estonia 6
EU - Europa 6
HU - Ungheria 6
PR - Porto Rico 6
PT - Portogallo 6
AL - Albania 5
DK - Danimarca 5
NP - Nepal 5
PE - Perù 5
SV - El Salvador 5
TW - Taiwan 5
UY - Uruguay 5
AT - Austria 4
AU - Australia 4
DO - Repubblica Dominicana 4
KG - Kirghizistan 4
KZ - Kazakistan 4
LK - Sri Lanka 4
MD - Moldavia 4
NO - Norvegia 4
NZ - Nuova Zelanda 4
QA - Qatar 4
RS - Serbia 4
TN - Tunisia 4
BO - Bolivia 3
BZ - Belize 3
CI - Costa d'Avorio 3
GE - Georgia 3
GT - Guatemala 3
HN - Honduras 3
KW - Kuwait 3
OM - Oman 3
PS - Palestinian Territory 3
TT - Trinidad e Tobago 3
BN - Brunei Darussalam 2
BW - Botswana 2
CY - Cipro 2
LB - Libano 2
NG - Nigeria 2
PA - Panama 2
SK - Slovacchia (Repubblica Slovacca) 2
SN - Senegal 2
SY - Repubblica araba siriana 2
Totale 28.823
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Città #
Southend 1.805
Ashburn 1.546
Santa Clara 1.435
Fairfield 1.209
Singapore 1.194
Hefei 1.072
Woodbridge 947
Chandler 855
Jacksonville 812
Houston 790
Hong Kong 685
San Jose 648
Ann Arbor 582
Seattle 452
Wilmington 430
Dearborn 389
Council Bluffs 379
Cambridge 373
Nyköping 350
Beijing 342
London 284
Seoul 265
Des Moines 256
Los Angeles 218
Izmir 187
The Dalles 171
Ho Chi Minh City 169
Helsinki 165
Hanoi 151
Modena 137
Chicago 128
New York 127
Sofia 126
Eugene 123
Princeton 123
San Diego 111
Milan 109
Lauterbourg 97
Buffalo 88
Dallas 81
Shanghai 65
Columbus 63
Moscow 58
São Paulo 50
Munich 49
Salt Lake City 40
Bremen 39
Brussels 39
San Mateo 38
Washington 36
Boardman 35
Grafing 35
Guangzhou 35
Orem 35
Phoenix 33
Da Nang 32
Rome 31
Atlanta 30
Tokyo 30
Augusta 29
Haiphong 28
Leawood 27
Montreal 27
Toronto 27
Miano 26
Dublin 24
Johannesburg 24
Kent 23
Warsaw 23
Brooklyn 22
Elk Grove Village 22
Ardabil 21
Norwalk 21
Chennai 20
Falkenstein 20
Frankfurt am Main 20
Redwood City 20
San Francisco 20
Mumbai 19
Rio de Janeiro 19
Detroit 18
Kunming 18
Denver 17
Falls Church 17
Nanjing 17
Turku 17
Amsterdam 16
Belo Horizonte 16
Indiana 16
Brasília 15
Changsha 15
Hillsboro 15
Auburn Hills 14
Tashkent 14
Amman 13
Porto Alegre 13
Verona 13
Baghdad 12
Philadelphia 12
Stockholm 12
Totale 20.966
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Nome #
Accendiamo la mente per capire la luce: di tutto e di più sul filo invisibile che lega il mondo 363
A self-consistent calculation of the electronic structure of thin copper films 357
Ab-initio Calculations Of The Electronic Properties of Silicon Nanocrystals: Absorption, Emission, Stokes Shift 338
A chi la vera Gloria? Le verità della Scienza sulla Luce 338
Chemical bonding at the Si-metal interface: Si-Ni and Si-Cr 334
Epoca - Eccellenza nei Processi Organizzativi e nella Corporate Analysis 333
Ab-initio Calculations Of The Electronic Properties of Hydrogenated and Oxidized Silicon Nanocrystrals: Ground and Excited States 329
Electronic properties of clean (001) surfaces of Ir and Pt 328
A theoretical study of ordered monolayer films of Copper 322
A THEORETICAL STUDY OF THE ELECTRONIC STRUCTURE OF PD (111) CLEAN SURFACE 319
Ab-initio calculation of the optical properties of silicon quantum wires 319
Absence of filled surface states in the s-p gap of clean (111) surface of Ag 315
Atomic intermixing and electronic interaction at the Pd - Si (111) interface 314
First-principles study of silicon nanocrystals: Structural and electronic properties, absorption, emission, and doping 312
Doping in silicon nanocrystals 309
Chemical bond and electronic states in calcium silicides: theory and comparison with synchrotron radiation photoemission 308
The electronic and optical properties of silicon nanoclusters: absorption and emission 306
Ab-initio calculation of the electronic (valence and core) and optical properties of interfaces 304
Ab-initio calculations of luminescence and optical gain properties in silicon nanostructures 304
An experimental and theoretical study of the electronic structure of the W (111) surface 302
Electrical and optical properties of silicide single crystals and thin films 302
Electronic properties of Silicon - transition metal interface compounds 301
Formation energies of silicon nanocrystals: role of dimension and passivation 299
Dispersion of surface bands in W(100) surface 298
Porous silicon: A quantum sponge structure for silicon based optoelectronics 297
Correlation effects in valence band spectra of Nickel Silicides 297
Gain theory and models in silicon nanostructures 292
NEXAFS measurement of the p-symmetry unoccupied states of silver, palladium and palladium silicide 289
A Test Chip for the Development of Porous Silicon Light Emitting Diodes 287
Coulomb correlation in Chromium compounds 283
Ab-initio structural and electronic properties of hydrogenated silicon nanoclusters in their ground and excited state 283
Effects of chemical environment in the lineshape of Silicon LVV Auger spectra of Nickel Silicides 281
Electrical characterization of alloy thin films of VSi2 and V3Si 281
W (111): angle-resolved photoemission from the clean and H2 - covered surface 280
Auger Lineshape analysis of porous silicon: Experiment and theory 279
Electrical transport properties of V3Si, V5Si3 and VSi2 thin films 277
Atelier "Raggio di luce" 277
sp-d hybridization effects on the electronic structure of the (100) surface in Copper 276
Formation energies of silicon nanocrystals: role of dimension and passivation 276
Covalency on the adsorption of Na on Si(111) 271
Electronic properties of metal rich Au-Si compounds and interfaces 271
Electron states of ultrathin Pd and Cu films on (001) Ag. 270
X-ray absorption and emission from different atoms of the same compound: success and failure of the single-particle picture 268
Electrical and structural characterization of Nb - Si thin film alloys 267
The optical transition in porous Si: The effects of quantum confinement, surface states and hydrogen passivation 264
Electronic, structural and optical properties of hydrogenated silicon nanocrystals: the role of the excited states 264
Chemical bond and electronic states in the CaF2-Si(111) and Ca-Si(111) interfaces 261
The luminescence transition in porous silicon: The nature of the electronic states 259
THE ELECTRONIC-PROPERTIES OF THE CAF2-SI(111) SYSTEM - FROM MONOLAYER COVERAGE TO SOLID SOLID INTERFACE 257
Perturbative valence charge density of trigonal Se and Te 256
W(111) surface: an experimental and theoretical photoemission study 253
Electronic structure and properties of Ni - Si (001) and Ni - Si (111) reactive interfaces 251
Importance of Coulomb correlation in Silicide spectra 249
Role of three-body interactions in the calculator of the total energy and the shear modulus of hexagonal metals 244
Role of the selfconsistency in the evaluation of the electronic structure of transition metal surfaces 244
Empty electronic states of calcium silicides: an inverse photoemission investigation in the ultraviolet photon range 243
The electronic structure of Au monolayer on (001) W 236
ELECTRONIC STATES AT THE (111) SURFACE OF NI DISILICIDE 234
Ca-silicides as prototypical systems for modelling the electron-states at the Si(111)/Yb interface: a Si- L2,3 Auger lineshape investigation 233
Electronic structure of Si(111)-NiSi2(111) A-type and B-type interfaces 229
Silicon based microphotonic: from basics to applications 228
Light emitting porous silicon diode based on a silicon/porous silicon heterojunction 226
Porous Silicon and its application for Light Emitting Diodes 225
Linear-Combination-of-Atomic-Orbital description of the electron states at the (0001) surfaces of hexagonal-close-packed metals 224
Electronic structure of Cr Silicides and Si-Cr interface reactions 223
Electronic Charge Trapping Effects in Porous Silicon 222
Theory of the Auger spectra of Ca-Si compounds 222
Spectroscopic investigation of electroluminescent Porous Silicon 222
Surface bands of Ga containing III-V compounds 221
The Ge/Au interface investigated with photoemission at the Cooper minimum 220
Initial formation of the CaF2 interface: a theoretical study 219
Electron Bombardment Effects on Light Emitting Porous Silicon 219
Electronic structure of Silicide - Silicon interfaces 219
Theory of Core-level Shifts of Clean and Covered Surfaces 218
Surface electronic states at the (110) surfaces of III-V compounds 216
The electronic properties of the Si (111) - transition metals interfaces 215
Electronic structure of compounds at Platinum -Silicon interface 214
Porous Silicon 213
Confinement and passivation in isolated and coupled silicon quantum wires 213
Valence band and core lines investigation on the Ge-Au system by photoelectron spectroscopy with synchrotron radiation 213
Chemical bonding and properties of Condensed Phases of Carbon and Silicon 212
Electronic structure of Vanadium Silicides 210
Electronic and structural properties of semiconductor-metal and semiconductor-insulator interfaces 210
The electonic structure of the (100) surface of Copper 209
THE ELECTRONIC-PROPERTIES OF SI-NISI2(111) EPITAXIAL INTERFACES 206
Surface electron states at the (110) surfaces of III-V semiconductors 204
Transition metal Silicides: aspects of the chemical bond and trends in the electronic structure 204
First-principle calculation for the core level shifts of clean and covered surfaces 203
Electrical and optical properties of near-noble silicides 203
Surface bands in relaxed cleavage surface of GaP 202
Silicon valence states in calcium silicides: A Si- L2,3 VV lineshape analysis 201
Perturbative theory and tree-body forces in h.c.p. metals 201
Partial screening in Ca Silicides measured by Ca 2 p electron-energy -loss spectroscopy 200
Preface of the Proceedings of the 3rd International-Conference on the Formation of Semiconductor Interfaces - Rome, Italy, May 6-10, 1991 198
Structural, electronic and optical properties of silicon nanoclusters: the role of the size and surface passivation 197
Electronic structure of CaSi and CaSi2 194
Electron states and luminescence transition in porous silicon 194
The electronic properties of Silicon - Silicide epitaxial interfaces 194
Optical properties of isolated and interacting silicon quantum wires 186
First principle investigation of the electronic properties of silicon-silicides interfaces 176
Totale 25.629
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Categoria #
all - tutte 103.584
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 103.584
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.514 0 0 0 187 59 124 136 80 211 121 345 251
2022/20232.234 259 229 158 199 231 508 21 237 249 17 66 60
2023/2024981 41 88 54 125 168 59 69 108 59 35 75 100
2024/20254.800 214 59 121 257 1.050 667 287 255 419 322 580 569
2025/20267.480 632 506 788 774 886 816 752 395 717 634 322 258
2026/20271.832 313 509 780 230 0 0 0 0 0 0 0 0
Totale 28.928