BISI, Olmes
 Distribuzione geografica
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Continente #
NA - Nord America 16.218
AS - Asia 6.800
EU - Europa 5.856
SA - Sud America 749
AF - Africa 118
Continente sconosciuto - Info sul continente non disponibili 89
OC - Oceania 8
Totale 29.838
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Nazione #
US - Stati Uniti d'America 15.963
GB - Regno Unito 2.356
CN - Cina 2.295
SG - Singapore 1.967
SE - Svezia 859
HK - Hong Kong 694
IT - Italia 607
VN - Vietnam 601
BR - Brasile 578
DE - Germania 474
TR - Turchia 366
UA - Ucraina 364
FI - Finlandia 305
KR - Corea 270
RU - Federazione Russa 260
FR - Francia 191
CA - Canada 136
BG - Bulgaria 134
BD - Bangladesh 130
IN - India 115
AR - Argentina 62
LT - Lituania 51
JP - Giappone 50
BE - Belgio 42
IQ - Iraq 39
MX - Messico 39
NL - Olanda 39
PL - Polonia 37
ZA - Sudafrica 37
ES - Italia 34
EC - Ecuador 31
IR - Iran 30
PK - Pakistan 30
ID - Indonesia 27
IL - Israele 25
AE - Emirati Arabi Uniti 22
CO - Colombia 22
VE - Venezuela 22
IE - Irlanda 21
PH - Filippine 20
MA - Marocco 17
SC - Seychelles 16
UZ - Uzbekistan 16
CR - Costa Rica 15
JO - Giordania 14
JM - Giamaica 13
KE - Kenya 13
SA - Arabia Saudita 12
CL - Cile 11
MY - Malesia 11
CH - Svizzera 10
PY - Paraguay 10
RO - Romania 10
TH - Thailandia 9
TT - Trinidad e Tobago 9
DZ - Algeria 8
EG - Egitto 8
AZ - Azerbaigian 7
CZ - Repubblica Ceca 7
HN - Honduras 7
PR - Porto Rico 7
EE - Estonia 6
EU - Europa 6
HU - Ungheria 6
PT - Portogallo 6
SV - El Salvador 6
AL - Albania 5
DK - Danimarca 5
NP - Nepal 5
PE - Perù 5
TW - Taiwan 5
UY - Uruguay 5
AT - Austria 4
AU - Australia 4
DO - Repubblica Dominicana 4
GT - Guatemala 4
KG - Kirghizistan 4
KZ - Kazakistan 4
LK - Sri Lanka 4
MD - Moldavia 4
NO - Norvegia 4
NZ - Nuova Zelanda 4
QA - Qatar 4
RS - Serbia 4
TN - Tunisia 4
BO - Bolivia 3
BZ - Belize 3
CI - Costa d'Avorio 3
CW - ???statistics.table.value.countryCode.CW??? 3
GE - Georgia 3
GP - Guadalupe 3
KW - Kuwait 3
OM - Oman 3
PS - Palestinian Territory 3
AM - Armenia 2
BN - Brunei Darussalam 2
BW - Botswana 2
CY - Cipro 2
LB - Libano 2
NG - Nigeria 2
Totale 29.726
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Città #
Ashburn 1.917
Southend 1.805
Santa Clara 1.439
Fairfield 1.209
Singapore 1.194
Hefei 1.072
Woodbridge 947
Chandler 855
Jacksonville 812
Houston 790
Hong Kong 685
San Jose 650
Ann Arbor 582
Council Bluffs 495
Seattle 452
Wilmington 430
Dearborn 389
Cambridge 373
Nyköping 350
Beijing 342
London 285
Seoul 265
Des Moines 256
Los Angeles 223
Izmir 187
The Dalles 171
Ho Chi Minh City 169
Helsinki 165
Hanoi 151
Modena 137
Chicago 132
New York 129
Sofia 126
Princeton 125
Eugene 123
San Diego 111
Milan 110
Lauterbourg 97
Buffalo 89
Dallas 84
São Paulo 75
Shanghai 65
Columbus 63
Moscow 58
Munich 49
Norfolk 45
Salt Lake City 40
Toronto 40
Bremen 39
Brussels 39
San Mateo 38
Washington 37
Boardman 35
Grafing 35
Guangzhou 35
Orem 35
Phoenix 35
Atlanta 34
Rome 34
Da Nang 32
Tokyo 31
Montreal 30
Augusta 29
Haiphong 28
Leawood 27
Miano 26
Brooklyn 24
Dublin 24
Johannesburg 24
Kent 23
Warsaw 23
Elk Grove Village 22
Ardabil 21
Denver 21
Norwalk 21
Chennai 20
Falkenstein 20
Frankfurt am Main 20
Redwood City 20
San Francisco 20
Detroit 19
Mumbai 19
Rio de Janeiro 19
Kunming 18
Amsterdam 17
Falls Church 17
Nanjing 17
Turku 17
Belo Horizonte 16
Indiana 16
Brasília 15
Changsha 15
Hillsboro 15
Auburn Hills 14
Tashkent 14
Verona 14
Amman 13
North Bergen 13
Porto Alegre 13
San José 13
Totale 21.574
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Nome #
Accendiamo la mente per capire la luce: di tutto e di più sul filo invisibile che lega il mondo 374
A self-consistent calculation of the electronic structure of thin copper films 360
A chi la vera Gloria? Le verità della Scienza sulla Luce 344
Ab-initio Calculations Of The Electronic Properties of Silicon Nanocrystals: Absorption, Emission, Stokes Shift 343
Chemical bonding at the Si-metal interface: Si-Ni and Si-Cr 342
Epoca - Eccellenza nei Processi Organizzativi e nella Corporate Analysis 339
Ab-initio Calculations Of The Electronic Properties of Hydrogenated and Oxidized Silicon Nanocrystrals: Ground and Excited States 334
Dispersion of surface bands in W(100) surface 334
Atomic intermixing and electronic interaction at the Pd - Si (111) interface 331
Ab-initio calculation of the optical properties of silicon quantum wires 331
Electronic properties of clean (001) surfaces of Ir and Pt 330
A THEORETICAL STUDY OF THE ELECTRONIC STRUCTURE OF PD (111) CLEAN SURFACE 326
A theoretical study of ordered monolayer films of Copper 325
Absence of filled surface states in the s-p gap of clean (111) surface of Ag 321
Doping in silicon nanocrystals 316
First-principles study of silicon nanocrystals: Structural and electronic properties, absorption, emission, and doping 316
Electronic properties of Silicon - transition metal interface compounds 314
The electronic and optical properties of silicon nanoclusters: absorption and emission 313
Chemical bond and electronic states in calcium silicides: theory and comparison with synchrotron radiation photoemission 313
Ab-initio calculations of luminescence and optical gain properties in silicon nanostructures 311
Ab-initio calculation of the electronic (valence and core) and optical properties of interfaces 310
An experimental and theoretical study of the electronic structure of the W (111) surface 309
Porous silicon: A quantum sponge structure for silicon based optoelectronics 307
Electrical and optical properties of silicide single crystals and thin films 307
Formation energies of silicon nanocrystals: role of dimension and passivation 304
Correlation effects in valence band spectra of Nickel Silicides 304
NEXAFS measurement of the p-symmetry unoccupied states of silver, palladium and palladium silicide 298
Electrical and structural characterization of Nb - Si thin film alloys 298
Gain theory and models in silicon nanostructures 295
Ab-initio structural and electronic properties of hydrogenated silicon nanoclusters in their ground and excited state 293
A Test Chip for the Development of Porous Silicon Light Emitting Diodes 291
Effects of chemical environment in the lineshape of Silicon LVV Auger spectra of Nickel Silicides 290
Coulomb correlation in Chromium compounds 289
Electrical characterization of alloy thin films of VSi2 and V3Si 287
Auger Lineshape analysis of porous silicon: Experiment and theory 286
W (111): angle-resolved photoemission from the clean and H2 - covered surface 284
Electronic properties of metal rich Au-Si compounds and interfaces 284
Electrical transport properties of V3Si, V5Si3 and VSi2 thin films 283
Atelier "Raggio di luce" 282
Formation energies of silicon nanocrystals: role of dimension and passivation 280
X-ray absorption and emission from different atoms of the same compound: success and failure of the single-particle picture 279
W(111) surface: an experimental and theoretical photoemission study 279
sp-d hybridization effects on the electronic structure of the (100) surface in Copper 277
Electron states of ultrathin Pd and Cu films on (001) Ag. 277
Covalency on the adsorption of Na on Si(111) 276
Electronic, structural and optical properties of hydrogenated silicon nanocrystals: the role of the excited states 272
The optical transition in porous Si: The effects of quantum confinement, surface states and hydrogen passivation 271
Chemical bond and electronic states in the CaF2-Si(111) and Ca-Si(111) interfaces 271
THE ELECTRONIC-PROPERTIES OF THE CAF2-SI(111) SYSTEM - FROM MONOLAYER COVERAGE TO SOLID SOLID INTERFACE 264
The luminescence transition in porous silicon: The nature of the electronic states 262
Perturbative valence charge density of trigonal Se and Te 259
Role of the selfconsistency in the evaluation of the electronic structure of transition metal surfaces 257
The electronic properties of the Si (111) - transition metals interfaces 257
Importance of Coulomb correlation in Silicide spectra 256
Electronic structure and properties of Ni - Si (001) and Ni - Si (111) reactive interfaces 256
Empty electronic states of calcium silicides: an inverse photoemission investigation in the ultraviolet photon range 249
Surface bands of Ga containing III-V compounds 249
Role of three-body interactions in the calculator of the total energy and the shear modulus of hexagonal metals 246
The electonic structure of the (100) surface of Copper 246
Ca-silicides as prototypical systems for modelling the electron-states at the Si(111)/Yb interface: a Si- L2,3 Auger lineshape investigation 242
The electronic structure of Au monolayer on (001) W 241
ELECTRONIC STATES AT THE (111) SURFACE OF NI DISILICIDE 238
Light emitting porous silicon diode based on a silicon/porous silicon heterojunction 234
Electronic structure of Si(111)-NiSi2(111) A-type and B-type interfaces 233
Porous Silicon 233
Silicon based microphotonic: from basics to applications 232
Linear-Combination-of-Atomic-Orbital description of the electron states at the (0001) surfaces of hexagonal-close-packed metals 231
The Ge/Au interface investigated with photoemission at the Cooper minimum 229
Porous Silicon and its application for Light Emitting Diodes 228
Spectroscopic investigation of electroluminescent Porous Silicon 228
Electronic structure of Cr Silicides and Si-Cr interface reactions 227
Electrical and optical properties of near-noble silicides 227
Initial formation of the CaF2 interface: a theoretical study 226
Electron Bombardment Effects on Light Emitting Porous Silicon 226
Theory of the Auger spectra of Ca-Si compounds 223
Electronic structure of Silicide - Silicon interfaces 222
Electronic Charge Trapping Effects in Porous Silicon 222
Chemical bonding and properties of Condensed Phases of Carbon and Silicon 221
Theory of Core-level Shifts of Clean and Covered Surfaces 221
Electronic structure of compounds at Platinum -Silicon interface 219
Valence band and core lines investigation on the Ge-Au system by photoelectron spectroscopy with synchrotron radiation 219
Perturbative theory and tree-body forces in h.c.p. metals 219
Confinement and passivation in isolated and coupled silicon quantum wires 218
Surface electronic states at the (110) surfaces of III-V compounds 217
Structural, electronic and optical properties of silicon nanoclusters: the role of the size and surface passivation 215
Electronic structure of Vanadium Silicides 213
THE ELECTRONIC-PROPERTIES OF SI-NISI2(111) EPITAXIAL INTERFACES 212
Electronic and structural properties of semiconductor-metal and semiconductor-insulator interfaces 210
First-principle calculation for the core level shifts of clean and covered surfaces 209
Partial screening in Ca Silicides measured by Ca 2 p electron-energy -loss spectroscopy 209
Surface bands in relaxed cleavage surface of GaP 208
Transition metal Silicides: aspects of the chemical bond and trends in the electronic structure 208
Silicon valence states in calcium silicides: A Si- L2,3 VV lineshape analysis 207
Surface electron states at the (110) surfaces of III-V semiconductors 204
Electron states and luminescence transition in porous silicon 203
Preface of the Proceedings of the 3rd International-Conference on the Formation of Semiconductor Interfaces - Rome, Italy, May 6-10, 1991 202
Electronic structure of CaSi and CaSi2 199
The electronic properties of Silicon - Silicide epitaxial interfaces 196
First principle investigation of the electronic properties of silicon-silicides interfaces 194
Optical properties of isolated and interacting silicon quantum wires 189
Totale 26.455
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Categoria #
all - tutte 105.881
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 105.881
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.327 0 0 0 0 59 124 136 80 211 121 345 251
2022/20232.234 259 229 158 199 231 508 21 237 249 17 66 60
2023/2024981 41 88 54 125 168 59 69 108 59 35 75 100
2024/20254.800 214 59 121 257 1.050 667 287 255 419 322 580 569
2025/20267.480 632 506 788 774 886 816 752 395 717 634 322 258
2026/20272.742 313 509 780 1.109 31 0 0 0 0 0 0 0
Totale 29.838