BISI, Olmes
 Distribuzione geografica
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Continente #
NA - Nord America 13.626
AS - Asia 6.685
EU - Europa 5.690
SA - Sud America 688
AF - Africa 100
Continente sconosciuto - Info sul continente non disponibili 7
OC - Oceania 7
Totale 26.803
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Nazione #
US - Stati Uniti d'America 13.485
GB - Regno Unito 2.336
CN - Cina 2.273
SG - Singapore 1.949
SE - Svezia 858
HK - Hong Kong 689
VN - Vietnam 601
BR - Brasile 534
IT - Italia 518
DE - Germania 469
TR - Turchia 366
UA - Ucraina 363
FI - Finlandia 305
KR - Corea 270
RU - Federazione Russa 235
FR - Francia 186
BG - Bulgaria 133
IN - India 113
BD - Bangladesh 84
CA - Canada 80
AR - Argentina 56
LT - Lituania 51
JP - Giappone 49
BE - Belgio 41
IQ - Iraq 38
ZA - Sudafrica 37
PL - Polonia 35
MX - Messico 34
NL - Olanda 34
IR - Iran 30
EC - Ecuador 28
ES - Italia 28
PK - Pakistan 27
ID - Indonesia 25
AE - Emirati Arabi Uniti 22
IE - Irlanda 21
PH - Filippine 20
VE - Venezuela 20
CO - Colombia 18
MA - Marocco 17
UZ - Uzbekistan 16
JO - Giordania 14
IL - Israele 13
KE - Kenya 13
MY - Malesia 11
SA - Arabia Saudita 11
CH - Svizzera 10
PY - Paraguay 10
CL - Cile 9
RO - Romania 9
TH - Thailandia 9
DZ - Algeria 8
EG - Egitto 8
AZ - Azerbaigian 7
CZ - Repubblica Ceca 7
EU - Europa 6
HU - Ungheria 6
JM - Giamaica 6
PT - Portogallo 6
AL - Albania 5
DK - Danimarca 5
NP - Nepal 5
PE - Perù 5
TW - Taiwan 5
UY - Uruguay 5
AT - Austria 4
AU - Australia 4
DO - Repubblica Dominicana 4
EE - Estonia 4
KG - Kirghizistan 4
LK - Sri Lanka 4
MD - Moldavia 4
PR - Porto Rico 4
QA - Qatar 4
RS - Serbia 4
TN - Tunisia 4
BO - Bolivia 3
BZ - Belize 3
CI - Costa d'Avorio 3
CR - Costa Rica 3
GE - Georgia 3
KW - Kuwait 3
KZ - Kazakistan 3
NO - Norvegia 3
NZ - Nuova Zelanda 3
OM - Oman 3
PS - Palestinian Territory 3
SV - El Salvador 3
BN - Brunei Darussalam 2
BW - Botswana 2
CY - Cipro 2
LB - Libano 2
PA - Panama 2
SK - Slovacchia (Repubblica Slovacca) 2
SN - Senegal 2
SY - Repubblica araba siriana 2
ZM - Zambia 2
AM - Armenia 1
BA - Bosnia-Erzegovina 1
BH - Bahrain 1
Totale 26.788
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Città #
Southend 1.805
Santa Clara 1.365
Fairfield 1.209
Singapore 1.191
Hefei 1.072
Ashburn 1.052
Woodbridge 947
Chandler 855
Jacksonville 812
Houston 783
Hong Kong 680
Ann Arbor 582
Seattle 445
Wilmington 427
Dearborn 389
Cambridge 372
San Jose 355
Nyköping 350
Beijing 339
London 283
Seoul 265
Des Moines 255
Izmir 187
Los Angeles 185
Council Bluffs 181
The Dalles 171
Ho Chi Minh City 169
Helsinki 165
Hanoi 151
Modena 133
Sofia 125
Eugene 123
Princeton 123
Chicago 120
New York 117
San Diego 110
Lauterbourg 97
Milan 85
Buffalo 75
Dallas 73
Shanghai 62
Moscow 58
Columbus 50
Munich 49
São Paulo 45
Salt Lake City 40
Bremen 39
Brussels 38
San Mateo 38
Grafing 35
Guangzhou 35
Orem 35
Da Nang 32
Washington 32
Boardman 31
Tokyo 30
Augusta 29
Haiphong 28
Leawood 27
Rome 27
Miano 25
Montreal 25
Johannesburg 24
Toronto 23
Atlanta 22
Elk Grove Village 22
Warsaw 22
Ardabil 21
Dublin 21
Kent 21
Norwalk 21
Brooklyn 20
Chennai 20
Falkenstein 20
Redwood City 20
Frankfurt am Main 19
Mumbai 19
Rio de Janeiro 19
Kunming 18
Phoenix 18
Falls Church 17
Nanjing 17
Turku 17
Amsterdam 16
Belo Horizonte 16
Indiana 16
Brasília 15
Changsha 15
Denver 15
Detroit 15
Hillsboro 15
San Francisco 15
Auburn Hills 14
Tashkent 14
Amman 13
Porto Alegre 13
Baghdad 12
Stockholm 12
Verona 12
New Delhi 11
Totale 19.693
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Nome #
Accendiamo la mente per capire la luce: di tutto e di più sul filo invisibile che lega il mondo 347
A self-consistent calculation of the electronic structure of thin copper films 341
Ab-initio Calculations Of The Electronic Properties of Silicon Nanocrystals: Absorption, Emission, Stokes Shift 323
A chi la vera Gloria? Le verità della Scienza sulla Luce 323
Chemical bonding at the Si-metal interface: Si-Ni and Si-Cr 319
Epoca - Eccellenza nei Processi Organizzativi e nella Corporate Analysis 317
Electronic properties of clean (001) surfaces of Ir and Pt 312
A THEORETICAL STUDY OF THE ELECTRONIC STRUCTURE OF PD (111) CLEAN SURFACE 308
Ab-initio calculation of the optical properties of silicon quantum wires 306
Absence of filled surface states in the s-p gap of clean (111) surface of Ag 303
A theoretical study of ordered monolayer films of Copper 301
Atomic intermixing and electronic interaction at the Pd - Si (111) interface 298
The electronic and optical properties of silicon nanoclusters: absorption and emission 296
Ab-initio Calculations Of The Electronic Properties of Hydrogenated and Oxidized Silicon Nanocrystrals: Ground and Excited States 293
Ab-initio calculation of the electronic (valence and core) and optical properties of interfaces 292
An experimental and theoretical study of the electronic structure of the W (111) surface 290
Chemical bond and electronic states in calcium silicides: theory and comparison with synchrotron radiation photoemission 289
First-principles study of silicon nanocrystals: Structural and electronic properties, absorption, emission, and doping 285
Formation energies of silicon nanocrystals: role of dimension and passivation 284
Doping in silicon nanocrystals 284
Gain theory and models in silicon nanostructures 281
Electronic properties of Silicon - transition metal interface compounds 281
Ab-initio calculations of luminescence and optical gain properties in silicon nanostructures 279
Correlation effects in valence band spectra of Nickel Silicides 279
A Test Chip for the Development of Porous Silicon Light Emitting Diodes 277
Electrical and optical properties of silicide single crystals and thin films 276
Porous silicon: A quantum sponge structure for silicon based optoelectronics 269
Ab-initio structural and electronic properties of hydrogenated silicon nanoclusters in their ground and excited state 269
Atelier "Raggio di luce" 266
Effects of chemical environment in the lineshape of Silicon LVV Auger spectra of Nickel Silicides 264
Coulomb correlation in Chromium compounds 264
Electrical characterization of alloy thin films of VSi2 and V3Si 264
Dispersion of surface bands in W(100) surface 264
Electron states of ultrathin Pd and Cu films on (001) Ag. 261
sp-d hybridization effects on the electronic structure of the (100) surface in Copper 259
W (111): angle-resolved photoemission from the clean and H2 - covered surface 259
Electronic, structural and optical properties of hydrogenated silicon nanocrystals: the role of the excited states 258
Electrical transport properties of V3Si, V5Si3 and VSi2 thin films 255
Covalency on the adsorption of Na on Si(111) 255
Electronic properties of metal rich Au-Si compounds and interfaces 254
Auger Lineshape analysis of porous silicon: Experiment and theory 253
Formation energies of silicon nanocrystals: role of dimension and passivation 253
The luminescence transition in porous silicon: The nature of the electronic states 248
The optical transition in porous Si: The effects of quantum confinement, surface states and hydrogen passivation 245
X-ray absorption and emission from different atoms of the same compound: success and failure of the single-particle picture 245
Perturbative valence charge density of trigonal Se and Te 245
THE ELECTRONIC-PROPERTIES OF THE CAF2-SI(111) SYSTEM - FROM MONOLAYER COVERAGE TO SOLID SOLID INTERFACE 236
Role of three-body interactions in the calculator of the total energy and the shear modulus of hexagonal metals 235
Electrical and structural characterization of Nb - Si thin film alloys 233
Role of the selfconsistency in the evaluation of the electronic structure of transition metal surfaces 233
Electronic structure and properties of Ni - Si (001) and Ni - Si (111) reactive interfaces 230
Importance of Coulomb correlation in Silicide spectra 226
Empty electronic states of calcium silicides: an inverse photoemission investigation in the ultraviolet photon range 226
Chemical bond and electronic states in the CaF2-Si(111) and Ca-Si(111) interfaces 225
ELECTRONIC STATES AT THE (111) SURFACE OF NI DISILICIDE 224
The electronic structure of Au monolayer on (001) W 224
Electronic structure of Si(111)-NiSi2(111) A-type and B-type interfaces 218
Ca-silicides as prototypical systems for modelling the electron-states at the Si(111)/Yb interface: a Si- L2,3 Auger lineshape investigation 213
Light emitting porous silicon diode based on a silicon/porous silicon heterojunction 212
Porous Silicon and its application for Light Emitting Diodes 212
Initial formation of the CaF2 interface: a theoretical study 210
W(111) surface: an experimental and theoretical photoemission study 210
Electronic structure of Cr Silicides and Si-Cr interface reactions 209
Theory of the Auger spectra of Ca-Si compounds 207
Electron Bombardment Effects on Light Emitting Porous Silicon 206
The Ge/Au interface investigated with photoemission at the Cooper minimum 205
Electronic structure of Silicide - Silicon interfaces 205
Silicon based microphotonic: from basics to applications 204
Electronic Charge Trapping Effects in Porous Silicon 204
Surface bands of Ga containing III-V compounds 203
Valence band and core lines investigation on the Ge-Au system by photoelectron spectroscopy with synchrotron radiation 202
Chemical bonding and properties of Condensed Phases of Carbon and Silicon 201
Porous Silicon 201
Surface electronic states at the (110) surfaces of III-V compounds 201
Linear-Combination-of-Atomic-Orbital description of the electron states at the (0001) surfaces of hexagonal-close-packed metals 200
Theory of Core-level Shifts of Clean and Covered Surfaces 200
Confinement and passivation in isolated and coupled silicon quantum wires 200
Electronic structure of compounds at Platinum -Silicon interface 199
Electronic and structural properties of semiconductor-metal and semiconductor-insulator interfaces 199
Spectroscopic investigation of electroluminescent Porous Silicon 199
THE ELECTRONIC-PROPERTIES OF SI-NISI2(111) EPITAXIAL INTERFACES 197
NEXAFS measurement of the p-symmetry unoccupied states of silver, palladium and palladium silicide 195
Electronic structure of Vanadium Silicides 195
First-principle calculation for the core level shifts of clean and covered surfaces 193
Surface electron states at the (110) surfaces of III-V semiconductors 192
Electrical and optical properties of near-noble silicides 191
The electonic structure of the (100) surface of Copper 188
Structural, electronic and optical properties of silicon nanoclusters: the role of the size and surface passivation 188
Preface of the Proceedings of the 3rd International-Conference on the Formation of Semiconductor Interfaces - Rome, Italy, May 6-10, 1991 187
Surface bands in relaxed cleavage surface of GaP 186
The electronic properties of Silicon - Silicide epitaxial interfaces 186
Transition metal Silicides: aspects of the chemical bond and trends in the electronic structure 184
Silicon valence states in calcium silicides: A Si- L2,3 VV lineshape analysis 183
The electronic properties of the Si (111) - transition metals interfaces 183
Electronic structure of CaSi and CaSi2 181
Electron states and luminescence transition in porous silicon 181
Perturbative theory and tree-body forces in h.c.p. metals 178
Partial screening in Ca Silicides measured by Ca 2 p electron-energy -loss spectroscopy 174
Optical properties of isolated and interacting silicon quantum wires 169
Structural and electronic properties of CaF2-Si(111) interface 166
Totale 23.843
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Categoria #
all - tutte 94.065
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 94.065
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021108 0 0 0 0 0 0 0 0 0 0 0 108
2021/20221.992 18 279 181 187 59 124 136 80 211 121 345 251
2022/20232.234 259 229 158 199 231 508 21 237 249 17 66 60
2023/2024981 41 88 54 125 168 59 69 108 59 35 75 100
2024/20254.800 214 59 121 257 1.050 667 287 255 419 322 580 569
2025/20267.265 632 506 788 774 886 816 752 395 717 634 322 43
Totale 26.881