BISI, Olmes
 Distribuzione geografica
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Continente #
NA - Nord America 12.277
AS - Asia 5.272
EU - Europa 5.220
SA - Sud America 546
AF - Africa 53
Continente sconosciuto - Info sul continente non disponibili 7
OC - Oceania 6
Totale 23.381
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Nazione #
US - Stati Uniti d'America 12.196
GB - Regno Unito 2.327
CN - Cina 2.149
SG - Singapore 1.499
SE - Svezia 857
HK - Hong Kong 603
BR - Brasile 440
DE - Germania 427
IT - Italia 367
TR - Turchia 359
UA - Ucraina 350
FI - Finlandia 238
KR - Corea 230
RU - Federazione Russa 229
VN - Vietnam 156
BG - Bulgaria 127
FR - Francia 68
IN - India 68
CA - Canada 51
LT - Lituania 51
AR - Argentina 49
BE - Belgio 40
JP - Giappone 34
IR - Iran 30
PL - Polonia 27
NL - Olanda 23
ZA - Sudafrica 23
BD - Bangladesh 21
MX - Messico 21
EC - Ecuador 20
ES - Italia 20
IE - Irlanda 19
ID - Indonesia 16
IQ - Iraq 15
AE - Emirati Arabi Uniti 13
UZ - Uzbekistan 11
JO - Giordania 10
PK - Pakistan 10
CO - Colombia 9
VE - Venezuela 9
KE - Kenya 8
MA - Marocco 8
PY - Paraguay 8
CH - Svizzera 7
RO - Romania 7
EU - Europa 6
MY - Malesia 6
SA - Arabia Saudita 6
CZ - Repubblica Ceca 5
DK - Danimarca 5
EG - Egitto 5
PH - Filippine 5
AT - Austria 4
IL - Israele 4
AU - Australia 3
BO - Bolivia 3
BZ - Belize 3
CL - Cile 3
DO - Repubblica Dominicana 3
HU - Ungheria 3
JM - Giamaica 3
NZ - Nuova Zelanda 3
PE - Perù 3
PT - Portogallo 3
BN - Brunei Darussalam 2
CI - Costa d'Avorio 2
DZ - Algeria 2
EE - Estonia 2
GE - Georgia 2
KG - Kirghizistan 2
KW - Kuwait 2
KZ - Kazakistan 2
LB - Libano 2
LK - Sri Lanka 2
MD - Moldavia 2
NO - Norvegia 2
NP - Nepal 2
OM - Oman 2
QA - Qatar 2
RS - Serbia 2
TW - Taiwan 2
UY - Uruguay 2
ZM - Zambia 2
AL - Albania 1
AM - Armenia 1
AZ - Azerbaigian 1
BA - Bosnia-Erzegovina 1
BY - Bielorussia 1
CV - Capo Verde 1
CY - Cipro 1
IM - Isola di Man 1
LI - Liechtenstein 1
LU - Lussemburgo 1
MK - Macedonia 1
PS - Palestinian Territory 1
SK - Slovacchia (Repubblica Slovacca) 1
SO - Somalia 1
SY - Repubblica araba siriana 1
TN - Tunisia 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 23.381
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Città #
Southend 1.805
Santa Clara 1.323
Fairfield 1.209
Hefei 1.072
Woodbridge 947
Singapore 878
Chandler 855
Jacksonville 808
Houston 778
Ashburn 768
Hong Kong 602
Ann Arbor 582
Seattle 442
Wilmington 427
Dearborn 389
Cambridge 372
Nyköping 350
Beijing 297
London 282
Des Moines 252
Seoul 228
Izmir 187
Los Angeles 150
Council Bluffs 131
Modena 129
Sofia 125
Eugene 123
Princeton 123
San Diego 109
Helsinki 98
The Dalles 93
New York 90
Chicago 84
Buffalo 73
Dallas 62
Shanghai 60
Moscow 57
Ho Chi Minh City 52
Munich 49
Columbus 45
Bremen 39
São Paulo 39
San Mateo 38
Brussels 37
Hanoi 37
Grafing 35
Guangzhou 33
Milan 32
Augusta 29
Boardman 29
Leawood 27
Salt Lake City 27
Montreal 22
Ardabil 21
Kent 21
Norwalk 21
Rome 21
Orem 20
Redwood City 20
Tokyo 20
Warsaw 20
Dublin 19
Kunming 18
Falls Church 17
Johannesburg 17
Nanjing 17
Rio de Janeiro 17
Toronto 17
Turku 17
Indiana 16
Atlanta 15
Brooklyn 15
Auburn Hills 14
Belo Horizonte 13
Brasília 13
Changsha 13
Chennai 13
Elk Grove Village 13
Mumbai 13
San Francisco 12
Stockholm 12
Verona 12
Denver 11
Detroit 11
Poplar 11
Redondo Beach 11
Amman 10
Hillsboro 10
Jinan 10
Phoenix 10
Boston 9
Monmouth Junction 9
Tashkent 9
Xi'an 9
Bologna 8
Buenos Aires 8
Frankfurt am Main 8
Hounslow 8
Kilburn 8
Porto Alegre 8
Totale 17.575
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Nome #
A self-consistent calculation of the electronic structure of thin copper films 303
Accendiamo la mente per capire la luce: di tutto e di più sul filo invisibile che lega il mondo 286
Electronic properties of clean (001) surfaces of Ir and Pt 284
Chemical bonding at the Si-metal interface: Si-Ni and Si-Cr 279
A THEORETICAL STUDY OF THE ELECTRONIC STRUCTURE OF PD (111) CLEAN SURFACE 277
Ab-initio Calculations Of The Electronic Properties of Silicon Nanocrystals: Absorption, Emission, Stokes Shift 276
Ab-initio calculation of the optical properties of silicon quantum wires 270
Epoca - Eccellenza nei Processi Organizzativi e nella Corporate Analysis 270
Absence of filled surface states in the s-p gap of clean (111) surface of Ag 267
A chi la vera Gloria? Le verità della Scienza sulla Luce 264
Ab-initio calculation of the electronic (valence and core) and optical properties of interfaces 261
An experimental and theoretical study of the electronic structure of the W (111) surface 260
A theoretical study of ordered monolayer films of Copper 259
The electronic and optical properties of silicon nanoclusters: absorption and emission 257
Formation energies of silicon nanocrystals: role of dimension and passivation 256
Chemical bond and electronic states in calcium silicides: theory and comparison with synchrotron radiation photoemission 252
Atomic intermixing and electronic interaction at the Pd - Si (111) interface 250
Correlation effects in valence band spectra of Nickel Silicides 248
Doping in silicon nanocrystals 244
Electrical characterization of alloy thin films of VSi2 and V3Si 244
Gain theory and models in silicon nanostructures 243
Coulomb correlation in Chromium compounds 243
Ab-initio calculations of luminescence and optical gain properties in silicon nanostructures 242
Electron states of ultrathin Pd and Cu films on (001) Ag. 240
Effects of chemical environment in the lineshape of Silicon LVV Auger spectra of Nickel Silicides 238
Electronic properties of Silicon - transition metal interface compounds 237
Ab-initio Calculations Of The Electronic Properties of Hydrogenated and Oxidized Silicon Nanocrystrals: Ground and Excited States 237
First-principles study of silicon nanocrystals: Structural and electronic properties, absorption, emission, and doping 235
sp-d hybridization effects on the electronic structure of the (100) surface in Copper 234
A Test Chip for the Development of Porous Silicon Light Emitting Diodes 234
W (111): angle-resolved photoemission from the clean and H2 - covered surface 230
Atelier "Raggio di luce" 227
Dispersion of surface bands in W(100) surface 227
Covalency on the adsorption of Na on Si(111) 226
The luminescence transition in porous silicon: The nature of the electronic states 224
Ab-initio structural and electronic properties of hydrogenated silicon nanoclusters in their ground and excited state 224
Perturbative valence charge density of trigonal Se and Te 223
Auger Lineshape analysis of porous silicon: Experiment and theory 223
Formation energies of silicon nanocrystals: role of dimension and passivation 223
The optical transition in porous Si: The effects of quantum confinement, surface states and hydrogen passivation 218
THE ELECTRONIC-PROPERTIES OF THE CAF2-SI(111) SYSTEM - FROM MONOLAYER COVERAGE TO SOLID SOLID INTERFACE 218
X-ray absorption and emission from different atoms of the same compound: success and failure of the single-particle picture 218
Electronic properties of metal rich Au-Si compounds and interfaces 218
Electrical and optical properties of silicide single crystals and thin films 218
Electronic, structural and optical properties of hydrogenated silicon nanocrystals: the role of the excited states 217
Role of three-body interactions in the calculator of the total energy and the shear modulus of hexagonal metals 214
Electronic structure and properties of Ni - Si (001) and Ni - Si (111) reactive interfaces 212
ELECTRONIC STATES AT THE (111) SURFACE OF NI DISILICIDE 207
Role of the selfconsistency in the evaluation of the electronic structure of transition metal surfaces 207
Importance of Coulomb correlation in Silicide spectra 205
Electrical transport properties of V3Si, V5Si3 and VSi2 thin films 204
Electronic structure of Si(111)-NiSi2(111) A-type and B-type interfaces 203
The electronic structure of Au monolayer on (001) W 203
Initial formation of the CaF2 interface: a theoretical study 196
Empty electronic states of calcium silicides: an inverse photoemission investigation in the ultraviolet photon range 195
Porous silicon: A quantum sponge structure for silicon based optoelectronics 195
Electronic structure of Cr Silicides and Si-Cr interface reactions 194
Porous Silicon and its application for Light Emitting Diodes 192
Electron Bombardment Effects on Light Emitting Porous Silicon 190
The Ge/Au interface investigated with photoemission at the Cooper minimum 190
Light emitting porous silicon diode based on a silicon/porous silicon heterojunction 185
Electronic structure of compounds at Platinum -Silicon interface 185
Chemical bonding and properties of Condensed Phases of Carbon and Silicon 184
W(111) surface: an experimental and theoretical photoemission study 183
Electronic Charge Trapping Effects in Porous Silicon 183
THE ELECTRONIC-PROPERTIES OF SI-NISI2(111) EPITAXIAL INTERFACES 183
Theory of the Auger spectra of Ca-Si compounds 182
Valence band and core lines investigation on the Ge-Au system by photoelectron spectroscopy with synchrotron radiation 182
Ca-silicides as prototypical systems for modelling the electron-states at the Si(111)/Yb interface: a Si- L2,3 Auger lineshape investigation 182
Electrical and structural characterization of Nb - Si thin film alloys 179
Surface electronic states at the (110) surfaces of III-V compounds 179
Linear-Combination-of-Atomic-Orbital description of the electron states at the (0001) surfaces of hexagonal-close-packed metals 177
Electronic structure of Vanadium Silicides 176
Electronic and structural properties of semiconductor-metal and semiconductor-insulator interfaces 176
Spectroscopic investigation of electroluminescent Porous Silicon 176
Chemical bond and electronic states in the CaF2-Si(111) and Ca-Si(111) interfaces 176
Electronic structure of Silicide - Silicon interfaces 174
Theory of Core-level Shifts of Clean and Covered Surfaces 174
Confinement and passivation in isolated and coupled silicon quantum wires 173
Silicon based microphotonic: from basics to applications 172
Surface electron states at the (110) surfaces of III-V semiconductors 172
The electonic structure of the (100) surface of Copper 172
Electrical and optical properties of near-noble silicides 171
The electronic properties of Silicon - Silicide epitaxial interfaces 171
NEXAFS measurement of the p-symmetry unoccupied states of silver, palladium and palladium silicide 170
Surface bands of Ga containing III-V compounds 170
First-principle calculation for the core level shifts of clean and covered surfaces 169
Preface of the Proceedings of the 3rd International-Conference on the Formation of Semiconductor Interfaces - Rome, Italy, May 6-10, 1991 168
Electron states and luminescence transition in porous silicon 168
Surface bands in relaxed cleavage surface of GaP 165
Structural, electronic and optical properties of silicon nanoclusters: the role of the size and surface passivation 165
Porous Silicon 164
Transition metal Silicides: aspects of the chemical bond and trends in the electronic structure 158
Electronic structure of CaSi and CaSi2 157
The electronic properties of the Si (111) - transition metals interfaces 154
Silicon valence states in calcium silicides: A Si- L2,3 VV lineshape analysis 152
Optical properties of isolated and interacting silicon quantum wires 150
Partial screening in Ca Silicides measured by Ca 2 p electron-energy -loss spectroscopy 150
Correlation and autoionization in Silicide Auger spectra 148
Luminescence in porous silicon: The role of confinement and passivation 148
Totale 20.854
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Categoria #
all - tutte 84.858
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 84.858
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/20211.315 0 0 0 0 0 121 179 291 107 247 262 108
2021/20221.992 18 279 181 187 59 124 136 80 211 121 345 251
2022/20232.234 259 229 158 199 231 508 21 237 249 17 66 60
2023/2024981 41 88 54 125 168 59 69 108 59 35 75 100
2024/20254.800 214 59 121 257 1.050 667 287 255 419 322 580 569
2025/20263.843 632 506 788 774 886 257 0 0 0 0 0 0
Totale 23.459