The electronic structure of Platinum silicides produced by thin film reaction is studied using ultraviolet photoemission and Auger spectroscopy. Spectra have been taken during the various stages of Si-Pt intermixing, in order to monitor the changes in the valence band, which take place during the reaction. The experimental data are compared with semi-empirical LCAO calculations. The importance of the coupling between Silicon p and Platinum d-states in determining the basic features of the chemical bond is discussed.

Electronic structure of compounds at Platinum -Silicon interface / I., Abbati; L., Braicovich; B., DE MICHELIS; Bisi, Olmes; R., Rovetta. - In: SOLID STATE COMMUNICATIONS. - ISSN 0038-1098. - STAMPA. - 37:(1981), pp. 119-122.

Electronic structure of compounds at Platinum -Silicon interface

BISI, Olmes;
1981

Abstract

The electronic structure of Platinum silicides produced by thin film reaction is studied using ultraviolet photoemission and Auger spectroscopy. Spectra have been taken during the various stages of Si-Pt intermixing, in order to monitor the changes in the valence band, which take place during the reaction. The experimental data are compared with semi-empirical LCAO calculations. The importance of the coupling between Silicon p and Platinum d-states in determining the basic features of the chemical bond is discussed.
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119
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Electronic structure of compounds at Platinum -Silicon interface / I., Abbati; L., Braicovich; B., DE MICHELIS; Bisi, Olmes; R., Rovetta. - In: SOLID STATE COMMUNICATIONS. - ISSN 0038-1098. - STAMPA. - 37:(1981), pp. 119-122.
I., Abbati; L., Braicovich; B., DE MICHELIS; Bisi, Olmes; R., Rovetta
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/449334
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