We present the results of a joint experimental and theoretical investigation of the electronic properties of Silicon – transition metal interfaces. We carried out ultraviolet photoemission experiments on Si-Pt, Si-Ni and Si-Pd interfaces at different coverages. Our results indicate that these interfaces are reactive. Comparison with semi-empirical LCAO calculations allows to understand the main features of the observed spectra.
The electronic properties of the Si (111) - transition metals interfaces / I., Abbati; L., Braicovich; B., DE MICHELIS; Bisi, Olmes; CALANDRA BUONAURA, Carlo; DEL PENNINO, Umberto; Valeri, Sergio. - In: JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN. - ISSN 0031-9015. - STAMPA. - 49 SUPPL. A:(1980), pp. 1071-1074.