Through anodically etching p-type Silicon in an ethanoic solution of HF, we prepared several porous samples whose physical properties have been investigated by different techniques, including photoluminescence, Raman scattering, Auger spectroscopy, secondary ion mass spectrometry, scanning electron microscopy and transmission electron microscopy. Schottky contacts on the porous surfaces have been deposited using different metals (Au, W, Ti and Al). In this way light emitting diodes have been obtained in the visible region. The performance and stability of the structures as well as the changes in the physical properties after the operation of the devices have been investigated. From the characterization of the physical properties and the behavior of the light emitting diodes a schematic band diagram of metal-p-Si structure is proposed and discussed. A tentative explanation of the different luminescence quantum efficiencies observed in p-Si for different excitation mechanism is given.
Porous Silicon and its application for Light Emitting Diodes / L., Pavesi; G., Mariotto; Bisi, Olmes; M., Anderle; L., Calliari. - In: VUOTO. - ISSN 0391-3155. - STAMPA. - 1985:(1993), pp. 632-643. (Intervento presentato al convegno Physical Concepts and Materials for Novel Optoelectronic Device Applications II tenutosi a Trieste nel 24-27 Maggio 1993).
Porous Silicon and its application for Light Emitting Diodes
BISI, Olmes;
1993
Abstract
Through anodically etching p-type Silicon in an ethanoic solution of HF, we prepared several porous samples whose physical properties have been investigated by different techniques, including photoluminescence, Raman scattering, Auger spectroscopy, secondary ion mass spectrometry, scanning electron microscopy and transmission electron microscopy. Schottky contacts on the porous surfaces have been deposited using different metals (Au, W, Ti and Al). In this way light emitting diodes have been obtained in the visible region. The performance and stability of the structures as well as the changes in the physical properties after the operation of the devices have been investigated. From the characterization of the physical properties and the behavior of the light emitting diodes a schematic band diagram of metal-p-Si structure is proposed and discussed. A tentative explanation of the different luminescence quantum efficiencies observed in p-Si for different excitation mechanism is given.Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris