Chemical bonding at the interface of a near‐noble‐metal (Ni) and a transition metal (Cr) with Si is examined through synchrotron radiation photoelectron spectroscopy studies of in situ formed interfaces, of cleaved bulk silicides, and of disordered surfaces prepared by sputter etching of the silicides. Interpretation of these experimental results is guided by parallel linear combination of atomic orbitals (LCAO) (extended Huckel approximation) calculations of stoichiometric Ni and Cr silicides.
Chemical bonding at the Si-metal interface: Si-Ni and Si-Cr / A., Franciosi; J. H., Weaver; D. G., O'Neill; Y., Chabal; J. E., Rowe; J. E., Poate; Bisi, Olmes; CALANDRA BUONAURA, Carlo. - In: THE JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY. - ISSN 0022-5355. - STAMPA. - 21:(1982), pp. 624-627.
Chemical bonding at the Si-metal interface: Si-Ni and Si-Cr
BISI, Olmes;CALANDRA BUONAURA, Carlo
1982-01-01
Abstract
Chemical bonding at the interface of a near‐noble‐metal (Ni) and a transition metal (Cr) with Si is examined through synchrotron radiation photoelectron spectroscopy studies of in situ formed interfaces, of cleaved bulk silicides, and of disordered surfaces prepared by sputter etching of the silicides. Interpretation of these experimental results is guided by parallel linear combination of atomic orbitals (LCAO) (extended Huckel approximation) calculations of stoichiometric Ni and Cr silicides.
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