A test device to implement room temperature visible light emitting diodes (LED) based on porous silicon is reported. The device is obtained through a post processing electrochemical anodization of p-type Si wafers where n+-type stripes have been defined by lithography and doped by ion implantation
A Test Chip for the Development of Porous Silicon Light Emitting Diodes / R., Guardini; P., Bellutti; L., Pavesi; G., Soncini; Bisi, Olmes. - In: VUOTO. - ISSN 0391-3155. - STAMPA. - 9:(1996), pp. 227-229. (Intervento presentato al convegno 1996 IEEE International Conference on Microelectronic Test Structures tenutosi a Povo, Trento nel Marzo 1996).
A Test Chip for the Development of Porous Silicon Light Emitting Diodes
BISI, Olmes
1996
Abstract
A test device to implement room temperature visible light emitting diodes (LED) based on porous silicon is reported. The device is obtained through a post processing electrochemical anodization of p-type Si wafers where n+-type stripes have been defined by lithography and doped by ion implantation
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