The selfconsistent electronic properties of the epitaxial Si(111)-NiSi2 interface are computer for the experimentally observed type-A and type-B growth orientations. The densities of states projected on the various sites provide a detailed analysis of the silicon- silicide interface electronic states. The measured Schottky barrier heights may be interpreted by assuming that deviations from epitaxy must be taken into account.
The electronic properties of Silicon - Silicide epitaxial interfaces / Ossicini, Stefano; Bisi, Olmes. - In: MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS. - ISSN 0272-9172. - STAMPA. - 102:(1988), pp. 315-318.
The electronic properties of Silicon - Silicide epitaxial interfaces
OSSICINI, Stefano;BISI, Olmes
1988
Abstract
The selfconsistent electronic properties of the epitaxial Si(111)-NiSi2 interface are computer for the experimentally observed type-A and type-B growth orientations. The densities of states projected on the various sites provide a detailed analysis of the silicon- silicide interface electronic states. The measured Schottky barrier heights may be interpreted by assuming that deviations from epitaxy must be taken into account.
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