NAVA, Filippo
 Distribuzione geografica
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Continente #
NA - Nord America 3.441
AS - Asia 1.780
EU - Europa 1.328
SA - Sud America 214
AF - Africa 23
Continente sconosciuto - Info sul continente non disponibili 3
OC - Oceania 3
Totale 6.792
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Nazione #
US - Stati Uniti d'America 3.386
CN - Cina 670
GB - Regno Unito 499
SG - Singapore 478
HK - Hong Kong 221
BR - Brasile 173
IT - Italia 169
SE - Svezia 159
VN - Vietnam 134
DE - Germania 133
KR - Corea 90
RU - Federazione Russa 71
FI - Finlandia 70
FR - Francia 65
UA - Ucraina 57
TR - Turchia 43
IN - India 42
BG - Bulgaria 22
CA - Canada 22
LT - Lituania 21
MX - Messico 19
JP - Giappone 18
AR - Argentina 16
BD - Bangladesh 15
BE - Belgio 13
ES - Italia 10
IE - Irlanda 9
CO - Colombia 7
ID - Indonesia 7
NL - Olanda 7
PK - Pakistan 7
PL - Polonia 7
EC - Ecuador 6
IQ - Iraq 6
ZA - Sudafrica 6
CR - Costa Rica 5
MA - Marocco 5
MY - Malesia 5
PH - Filippine 5
AE - Emirati Arabi Uniti 4
AT - Austria 4
DZ - Algeria 4
IL - Israele 4
SA - Arabia Saudita 4
VE - Venezuela 4
AU - Australia 3
CL - Cile 3
DO - Repubblica Dominicana 3
EU - Europa 3
NP - Nepal 3
QA - Qatar 3
TH - Thailandia 3
UZ - Uzbekistan 3
CH - Svizzera 2
CZ - Repubblica Ceca 2
GE - Georgia 2
IR - Iran 2
JM - Giamaica 2
PE - Perù 2
PS - Palestinian Territory 2
RS - Serbia 2
TT - Trinidad e Tobago 2
AL - Albania 1
AZ - Azerbaigian 1
BH - Bahrain 1
BN - Brunei Darussalam 1
BO - Bolivia 1
BY - Bielorussia 1
BZ - Belize 1
CM - Camerun 1
DK - Danimarca 1
EG - Egitto 1
GH - Ghana 1
HN - Honduras 1
HU - Ungheria 1
KE - Kenya 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
LB - Libano 1
LY - Libia 1
NO - Norvegia 1
OM - Oman 1
PT - Portogallo 1
PY - Paraguay 1
SL - Sierra Leone 1
TJ - Tagikistan 1
TN - Tunisia 1
TW - Taiwan 1
TZ - Tanzania 1
UY - Uruguay 1
Totale 6.792
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Città #
Santa Clara 426
Southend 350
Hefei 317
Ashburn 304
Singapore 297
Chandler 287
Fairfield 246
Hong Kong 215
Woodbridge 172
Ann Arbor 163
Houston 156
Jacksonville 129
Seattle 117
Nyköping 109
San Jose 106
Wilmington 101
Cambridge 96
London 90
Seoul 89
Modena 88
Dearborn 79
Beijing 71
Los Angeles 68
Chicago 55
The Dalles 54
Helsinki 47
Ho Chi Minh City 40
New York 38
Buffalo 35
Des Moines 33
Hanoi 30
Shanghai 27
Council Bluffs 26
Lauterbourg 26
São Paulo 25
Bremen 24
Izmir 23
Washington 23
San Diego 22
Sofia 22
Milan 21
Eugene 20
Moscow 20
Princeton 20
Dallas 15
Orem 14
Brussels 13
Columbus 11
Kent 11
Rio de Janeiro 11
Salt Lake City 11
Tokyo 11
Falls Church 10
Guangzhou 10
Philadelphia 9
Denver 8
Dublin 8
Munich 8
Grafing 7
Marburg 7
Miano 7
Phoenix 7
Stockholm 7
Toronto 7
Warsaw 7
Chennai 6
Da Nang 6
Johannesburg 6
Redwood City 6
Tampa 6
Brantford 5
Brooklyn 5
Haiphong 5
Mexico City 5
Montreal 5
Querétaro 5
Sterling 5
Zhengzhou 5
Amsterdam 4
Auburn Hills 4
Chiswick 4
Curitiba 4
Elk Grove Village 4
Islington 4
Mumbai 4
Prescot 4
Redondo Beach 4
San Francisco 4
Turku 4
Verona 4
Baltimore 3
Belo Horizonte 3
Bengaluru 3
Boydton 3
Brasília 3
Bắc Ninh 3
Castel Campagnano 3
Changsha 3
Charlotte 3
Detroit 3
Totale 5.054
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Nome #
Silicon carbide for alpha, beta, ion and soft X-ray high performance detectors 335
Polymerization and Characterization of 4,4’-bis(alkylsulfanyl)-2,2’-bithiophenes 330
Far Infrared Vibrational Spectroscopy in CrSi_2 297
Processing high-quality silicon for microstrip detectors 277
Silicon Carbide and its use as a radiation detector material 275
Electrical and optical properties of silicide single crystals and thin films 274
Radiation detection properties of 4H-SiC Schottky diodes irradiated up to 10(16) n/cm(2) by 1 MeV neutrons 268
Electrical characterization of alloy thin films of VSi2 and V3Si 263
Electrical transport properties of V3Si, V5Si3 and VSi2 thin films 251
Charge particle detection properties of epitaxial 4H-SiC Schottky diodes 245
Investigation on the charge collection properties of a 4H-SiC Schottky diode detector 242
On the UV responsivity of neutron irradiated 4H-SiC 236
Diffusion coefficient of electrons in silicon 232
Charge particle detection properties of epitaxial 4H-SiC Schottky diodes 219
Radiation tolerance of epitaxial silicon carbide detectors for electrons, protons and gamma-rays 216
Electrical and structural characterization of Nb - Si thin film alloys 210
Diffusion coeffcient of electrons in Si 201
Far-infrared spectroscopy of thermally annealed tungsten silicide films 195
Electrical and optical properties of near-noble silicides 191
Electric-field behavior and charge-density distribution in semi-insulating gallium arsenide Schottky diodes 162
Optical and vibrational properties of Cr and Fe disilicides 160
Epitaxial silicon carbide for X-ray detection 153
Evidence for plasma effect on charge collection efficiency in proton irradiated GaAs detectors 149
Analysis of uniformity of as prepared and irradiated SI GaAs radiation detectors 147
Deep levels in silicon carbide Schottky diodes 141
Electric field distribution in irradiated silicon detectors 140
Epitaxial silicon carbide charge particle detectors 135
Characterisation of silicon carbide detectors response to electron and photon irradiation 131
Double-junction effect in proton-irradiated silicon diodes 126
THEORY AND EXPERIMENT ON THE OPTICAL-PROPERTIES OF CRSI2 119
Effect of heavy proton and neutron irradiations on epitaxial 4H-SiC Schottky diodes 119
Integration of front-end electronics with GaAs pixel detectors: Experimental and feasibility analysis 115
OPTICAL STUDY OF NIOBIUM DISILICIDE POLYCRYSTALLINE FILMS 107
Influence of substrate on the performance of semi-insulating GaAs detectors 94
Influence of acceptor impurities on semi-insulating GaAs particle detectors 2
PREPARATION OF LOW-NOISE HIGH-QUALITY SILICON MICROSTRIP DETECTORS 2
GAAS SOLID-STATE DETECTORS FOR PARTICLE PHYSICS 2
Deep levels by proton and electron irradiation in 4H-SiC 1
Average energy dissipated by mega-electron-volt hydrogen and helium ions per electron-hole pair generation in 4H-SiC 1
Electronic levels induced by irradiation in 4H-silicon carbide 1
Lateral IBIC analysis of GaAs Schottky diodes 1
Low temperature annealing of electron irradiation induced defects in 4H-SiC 1
Low-noise silicon carbide X-ray sensor with wide operating temperature range 1
Radiation tolerance of epitaxial silicon carbide detectors for electrons and gamma-rays 1
High-bandgap semiconductor dosimeters for radiotherapy applications 1
Characterisation of epitaxial SiC Schottky barriers as particle detectors 1
Investigation of 4H-SiC Schottky diodes by ion beam induced charge (IBIC) technique 1
Low temperature annealing effects on the performance of proton irradiated GaAs detectors 1
Proton induced bulk damage effects in gallium arsenide detectors 1
Improved performance of GaAs radiation detectors with low temperature ohmic contacts 1
The role of the ohmic contact on the efficiency of gallium arsenide radiation detectors 1
Analysis of the active layer in SI GaAs Schottky diodes 1
Optical evaluation of the ionized EL2 fraction in proton (24 GeV) irradiated semi-insulating GaAs 1
Photon radiation damage in high purity silicon and LEC Si gallium arsenide detectors 1
SOME PHYSICAL-PROPERTIES OF RESI1.75 SINGLE-CRYSTALS 1
Performances of SI GaAs detectors fabricated with implanted ohmic contacts. 1
OPTICAL AND ELECTRONIC-PROPERTIES OF 5TH-COLUMN TRANSITION-METAL DISILICIDES 1
OPTICAL-CONSTANTS AND ELECTRICAL TRANSPORT PARAMETERS OF HFSI2 1
OPTICAL AND ELECTRICAL CHARACTERIZATION OF VSI2 AND NBSI2 SINGLE-CRYSTALS 1
INFLUENCE OF ANNEALING TEMPERATURE ON STRUCTURAL, ELECTRICAL AND OPTICAL-PROPERTIES OF WSI2 1
ELECTRICAL AND OPTICAL CHARACTERIZATION OF GDSI2 AND ERSI2 ALLOY THIN-FILMS 1
OPTICAL-PROPERTIES OF WSI2 1
STRUCTURAL AND ELECTRICAL INVESTIGATION OF AMORPHOUS-TO-CRYSTALLINE TRANSFORMATION IN IRON DISILICIDE ALLOY THIN-FILMS 1
ELECTRICAL-TRANSPORT PROPERTIES OF CU3GE THIN-FILMS 1
Electric field and space-charge distribution in SI GaAs:effect of high energy proton irradiation 1
Energy resolution in GaAs X- and gamma-ray detectors 1
Minimum ionizing and alpha particles detectors based on epitaxial semiconductor silicon carbide 1
A new generation of X-ray detectors based on silicon carbide 1
IBIC analysis of gallium arsenide Schottky diodes 1
Electric field and plasma effects on proton-irradiated GaAs detector performance 1
A study of the trap influence on the performance of semi-insulating GaAs detectors 1
INFLUENCE OF ELECTRON TRAPS ON CHARGE-COLLECTION EFFICIENCY IN GAAS RADIATION DETECTORS 1
Microscopic modelling of semi-insulating GaAs detectors 1
PERFORMANCE OF A NEW OHMIC CONTACT FOR GAAS PARTICLE DETECTORS 1
GALLIUM-ARSENIDE PARTICLE DETECTORS - A STUDY OF THE ACTIVE-REGION AND CHARGE-COLLECTION EFFICIENCY 1
Analysis of the output signal waveform and performances of semi-insulating GaAs particle detectors 1
AN OPTICAL-BEAM-INDUCED-CURRENT STUDY OF ACTIVE-REGION AND CHARGE COLLECTION EFFICIENCY OF GAAS PARTICLE DETECTORS 1
Temperature dependent IBIC study of 4H-SiC Schottky diodes 1
Characterisation of SiC by IBIC and other IBA techniques 1
CRYSTALLIZATION, RESISTIVITY AND MICROSTRUCTURE OF METAL SILICON THIN-FILM ALLOYS 1
ELECTRICAL AND MAGNETIC-PROPERTIES OF ERSI2 AND GDSI2 ALLOY THIN-FILMS 1
OPTICAL-PROPERTIES OF POLYCRYSTALLINE NICKEL SILICIDES 1
OPTICAL-PROPERTIES OF PD2SI 1
Electrical and optical characterization of 4H-SiC diodes for particle detection 1
STRUCTURAL AND ELECTRONIC TRANSPORT-PROPERTIES OF RESI2-DELTA SINGLE-CRYSTALS 1
Electrical and optical characterization of electron irradiated X rays detectors based on 4H-SiC epitaxial layers 1
Totale 6.810
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Categoria #
all - tutte 28.772
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 28.772
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202151 0 0 0 0 0 0 0 0 0 0 39 12
2021/2022359 5 48 46 22 6 28 27 14 38 27 45 53
2022/2023663 60 69 35 74 83 115 7 86 89 6 26 13
2023/2024326 12 25 18 60 58 45 11 37 4 7 23 26
2024/20251.407 38 12 22 70 285 214 119 90 132 39 189 197
2025/20262.114 164 153 245 271 260 214 207 71 231 197 101 0
Totale 6.810