NAVA, Filippo
 Distribuzione geografica
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Continente #
NA - Nord America 2.533
EU - Europa 1.040
AS - Asia 392
Continente sconosciuto - Info sul continente non disponibili 3
AF - Africa 1
OC - Oceania 1
Totale 3.970
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Nazione #
US - Stati Uniti d'America 2.532
GB - Regno Unito 419
SE - Svezia 148
CN - Cina 125
SG - Singapore 115
IT - Italia 112
DE - Germania 103
HK - Hong Kong 91
FI - Finlandia 56
UA - Ucraina 54
RU - Federazione Russa 41
TR - Turchia 38
FR - Francia 35
BG - Bulgaria 22
LT - Lituania 21
BE - Belgio 13
IN - India 10
IE - Irlanda 9
JP - Giappone 4
EU - Europa 3
NL - Olanda 3
VN - Vietnam 3
IR - Iran 2
PL - Polonia 2
AT - Austria 1
AU - Australia 1
BN - Brunei Darussalam 1
CA - Canada 1
LA - Repubblica Popolare Democratica del Laos 1
RS - Serbia 1
SA - Arabia Saudita 1
TN - Tunisia 1
UZ - Uzbekistan 1
Totale 3.970
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Città #
Santa Clara 411
Southend 350
Chandler 287
Fairfield 246
Ashburn 182
Woodbridge 171
Ann Arbor 163
Houston 153
Jacksonville 126
Seattle 115
Nyköping 109
Wilmington 101
Singapore 99
Cambridge 96
Hong Kong 91
Modena 84
Dearborn 79
Helsinki 37
Des Moines 33
Bremen 24
Izmir 23
San Diego 22
Sofia 22
Beijing 21
Eugene 20
London 20
Princeton 20
Shanghai 18
Moscow 15
Brussels 13
Falls Church 10
Dublin 8
Grafing 7
Chicago 6
Redwood City 6
New York 5
Washington 5
Auburn Hills 4
Chiswick 4
Guangzhou 4
Islington 4
Philadelphia 4
Prescot 4
Verona 4
Castel Campagnano 3
Dallas 3
Hefei 3
Indiana 3
Kunming 3
Milan 3
Norwalk 3
Phoenix 3
San Mateo 3
Acton 2
Alcamo 2
Ardabil 2
Bhubaneswar 2
Boulder 2
Changsha 2
Dong Ket 2
Dubna 2
Jinan 2
Leawood 2
Marseille 2
Meldola 2
Rennes 2
Warsaw 2
Athens 1
Augusta 1
Avola 1
Awara 1
Bandar Seri Begawan 1
Belgrade 1
Benxi 1
Bolton 1
Chengdu 1
Chongqing 1
Clearwater 1
Cormeilles-en-Parisis 1
Delhi 1
Detroit 1
Egham 1
Falkenstein 1
Florence 1
Gatchina 1
Guangdong 1
Guiyang 1
Hanoi 1
Hebei 1
Hounslow 1
Huizhou 1
Karlsruhe 1
Kilburn 1
Livorno 1
Longwood 1
Los Angeles 1
Mumbai 1
Münster 1
Nanjing 1
Nanyang 1
Totale 3.314
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Nome #
Silicon carbide for alpha, beta, ion and soft X-ray high performance detectors 240
Polymerization and Characterization of 4,4’-bis(alkylsulfanyl)-2,2’-bithiophenes 235
Far Infrared Vibrational Spectroscopy in CrSi_2 220
Processing high-quality silicon for microstrip detectors 197
Electrical characterization of alloy thin films of VSi2 and V3Si 193
Silicon Carbide and its use as a radiation detector material 187
Electrical and optical properties of silicide single crystals and thin films 178
On the UV responsivity of neutron irradiated 4H-SiC 175
Charge particle detection properties of epitaxial 4H-SiC Schottky diodes 172
Investigation on the charge collection properties of a 4H-SiC Schottky diode detector 165
Radiation detection properties of 4H-SiC Schottky diodes irradiated up to 10(16) n/cm(2) by 1 MeV neutrons 163
Radiation tolerance of epitaxial silicon carbide detectors for electrons, protons and gamma-rays 160
Far-infrared spectroscopy of thermally annealed tungsten silicide films 160
Diffusion coefficient of electrons in silicon 150
Charge particle detection properties of epitaxial 4H-SiC Schottky diodes 137
Electrical transport properties of V3Si, V5Si3 and VSi2 thin films 132
Electrical and optical properties of near-noble silicides 131
Diffusion coeffcient of electrons in Si 130
Electrical and structural characterization of Nb - Si thin film alloys 106
Optical and vibrational properties of Cr and Fe disilicides 105
Effect of heavy proton and neutron irradiations on epitaxial 4H-SiC Schottky diodes 53
Epitaxial silicon carbide for X-ray detection 49
Analysis of uniformity of as prepared and irradiated SI GaAs radiation detectors 49
Electric-field behavior and charge-density distribution in semi-insulating gallium arsenide Schottky diodes 48
Evidence for plasma effect on charge collection efficiency in proton irradiated GaAs detectors 45
Epitaxial silicon carbide charge particle detectors 44
Characterisation of silicon carbide detectors response to electron and photon irradiation 44
Double-junction effect in proton-irradiated silicon diodes 42
Deep levels in silicon carbide Schottky diodes 40
Integration of front-end electronics with GaAs pixel detectors: Experimental and feasibility analysis 40
THEORY AND EXPERIMENT ON THE OPTICAL-PROPERTIES OF CRSI2 38
Electric field distribution in irradiated silicon detectors 37
OPTICAL STUDY OF NIOBIUM DISILICIDE POLYCRYSTALLINE FILMS 34
Influence of substrate on the performance of semi-insulating GaAs detectors 34
Influence of acceptor impurities on semi-insulating GaAs particle detectors 2
PREPARATION OF LOW-NOISE HIGH-QUALITY SILICON MICROSTRIP DETECTORS 2
GAAS SOLID-STATE DETECTORS FOR PARTICLE PHYSICS 2
Deep levels by proton and electron irradiation in 4H-SiC 1
Average energy dissipated by mega-electron-volt hydrogen and helium ions per electron-hole pair generation in 4H-SiC 1
Electronic levels induced by irradiation in 4H-silicon carbide 1
Lateral IBIC analysis of GaAs Schottky diodes 1
Low temperature annealing of electron irradiation induced defects in 4H-SiC 1
Low-noise silicon carbide X-ray sensor with wide operating temperature range 1
Radiation tolerance of epitaxial silicon carbide detectors for electrons and gamma-rays 1
High-bandgap semiconductor dosimeters for radiotherapy applications 1
Characterisation of epitaxial SiC Schottky barriers as particle detectors 1
Investigation of 4H-SiC Schottky diodes by ion beam induced charge (IBIC) technique 1
Low temperature annealing effects on the performance of proton irradiated GaAs detectors 1
Proton induced bulk damage effects in gallium arsenide detectors 1
Improved performance of GaAs radiation detectors with low temperature ohmic contacts 1
The role of the ohmic contact on the efficiency of gallium arsenide radiation detectors 1
Analysis of the active layer in SI GaAs Schottky diodes 1
Optical evaluation of the ionized EL2 fraction in proton (24 GeV) irradiated semi-insulating GaAs 1
Photon radiation damage in high purity silicon and LEC Si gallium arsenide detectors 1
SOME PHYSICAL-PROPERTIES OF RESI1.75 SINGLE-CRYSTALS 1
Performances of SI GaAs detectors fabricated with implanted ohmic contacts. 1
OPTICAL AND ELECTRONIC-PROPERTIES OF 5TH-COLUMN TRANSITION-METAL DISILICIDES 1
OPTICAL-CONSTANTS AND ELECTRICAL TRANSPORT PARAMETERS OF HFSI2 1
OPTICAL AND ELECTRICAL CHARACTERIZATION OF VSI2 AND NBSI2 SINGLE-CRYSTALS 1
INFLUENCE OF ANNEALING TEMPERATURE ON STRUCTURAL, ELECTRICAL AND OPTICAL-PROPERTIES OF WSI2 1
ELECTRICAL AND OPTICAL CHARACTERIZATION OF GDSI2 AND ERSI2 ALLOY THIN-FILMS 1
OPTICAL-PROPERTIES OF WSI2 1
STRUCTURAL AND ELECTRICAL INVESTIGATION OF AMORPHOUS-TO-CRYSTALLINE TRANSFORMATION IN IRON DISILICIDE ALLOY THIN-FILMS 1
ELECTRICAL-TRANSPORT PROPERTIES OF CU3GE THIN-FILMS 1
Electric field and space-charge distribution in SI GaAs:effect of high energy proton irradiation 1
Energy resolution in GaAs X- and gamma-ray detectors 1
Minimum ionizing and alpha particles detectors based on epitaxial semiconductor silicon carbide 1
A new generation of X-ray detectors based on silicon carbide 1
IBIC analysis of gallium arsenide Schottky diodes 1
Electric field and plasma effects on proton-irradiated GaAs detector performance 1
A study of the trap influence on the performance of semi-insulating GaAs detectors 1
INFLUENCE OF ELECTRON TRAPS ON CHARGE-COLLECTION EFFICIENCY IN GAAS RADIATION DETECTORS 1
Microscopic modelling of semi-insulating GaAs detectors 1
PERFORMANCE OF A NEW OHMIC CONTACT FOR GAAS PARTICLE DETECTORS 1
GALLIUM-ARSENIDE PARTICLE DETECTORS - A STUDY OF THE ACTIVE-REGION AND CHARGE-COLLECTION EFFICIENCY 1
Analysis of the output signal waveform and performances of semi-insulating GaAs particle detectors 1
AN OPTICAL-BEAM-INDUCED-CURRENT STUDY OF ACTIVE-REGION AND CHARGE COLLECTION EFFICIENCY OF GAAS PARTICLE DETECTORS 1
Temperature dependent IBIC study of 4H-SiC Schottky diodes 1
Characterisation of SiC by IBIC and other IBA techniques 1
CRYSTALLIZATION, RESISTIVITY AND MICROSTRUCTURE OF METAL SILICON THIN-FILM ALLOYS 1
ELECTRICAL AND MAGNETIC-PROPERTIES OF ERSI2 AND GDSI2 ALLOY THIN-FILMS 1
OPTICAL-PROPERTIES OF POLYCRYSTALLINE NICKEL SILICIDES 1
OPTICAL-PROPERTIES OF PD2SI 1
Electrical and optical characterization of 4H-SiC diodes for particle detection 1
STRUCTURAL AND ELECTRONIC TRANSPORT-PROPERTIES OF RESI2-DELTA SINGLE-CRYSTALS 1
Electrical and optical characterization of electron irradiated X rays detectors based on 4H-SiC epitaxial layers 1
Totale 3.988
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Categoria #
all - tutte 19.842
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 19.842
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020308 0 0 0 0 0 0 88 59 66 29 33 33
2020/2021571 44 11 53 42 62 18 107 62 57 64 39 12
2021/2022359 5 48 46 22 6 28 27 14 38 27 45 53
2022/2023663 60 69 35 74 83 115 7 86 89 6 26 13
2023/2024326 12 25 18 60 58 45 11 37 4 7 23 26
2024/2025699 38 12 22 70 285 214 58 0 0 0 0 0
Totale 3.988