NAVA, Filippo
 Distribuzione geografica
Continente #
NA - Nord America 2.099
EU - Europa 956
AS - Asia 161
Continente sconosciuto - Info sul continente non disponibili 3
AF - Africa 1
Totale 3.220
Nazione #
US - Stati Uniti d'America 2.098
GB - Regno Unito 416
SE - Svezia 148
IT - Italia 108
DE - Germania 102
CN - Cina 67
UA - Ucraina 54
TR - Turchia 38
FI - Finlandia 36
HK - Hong Kong 36
FR - Francia 35
BG - Bulgaria 22
BE - Belgio 11
RU - Federazione Russa 10
IE - Irlanda 9
IN - India 8
EU - Europa 3
JP - Giappone 3
VN - Vietnam 3
IR - Iran 2
NL - Olanda 2
PL - Polonia 2
BN - Brunei Darussalam 1
CA - Canada 1
LA - Repubblica Popolare Democratica del Laos 1
RS - Serbia 1
SA - Arabia Saudita 1
SG - Singapore 1
TN - Tunisia 1
Totale 3.220
Città #
Southend 350
Chandler 287
Fairfield 246
Ashburn 178
Woodbridge 171
Ann Arbor 163
Houston 151
Jacksonville 126
Seattle 115
Nyköping 109
Wilmington 101
Cambridge 96
Modena 82
Dearborn 79
Hong Kong 36
Des Moines 33
Bremen 24
Izmir 23
San Diego 22
Sofia 22
Eugene 20
Princeton 20
Beijing 19
London 19
Shanghai 18
Helsinki 17
Brussels 11
Falls Church 10
Dublin 8
Grafing 7
Redwood City 6
New York 5
Washington 5
Auburn Hills 4
Chiswick 4
Islington 4
Philadelphia 4
Prescot 4
Verona 4
Castel Campagnano 3
Hefei 3
Indiana 3
Kunming 3
Milan 3
Norwalk 3
Phoenix 3
San Mateo 3
Acton 2
Ardabil 2
Boulder 2
Dong Ket 2
Dubna 2
Leawood 2
Marseille 2
Meldola 2
Rennes 2
Warsaw 2
Athens 1
Augusta 1
Avola 1
Awara 1
Bandar Seri Begawan 1
Belgrade 1
Bolton 1
Changsha 1
Chicago 1
Clearwater 1
Cormeilles-en-Parisis 1
Delhi 1
Detroit 1
Egham 1
Florence 1
Guangdong 1
Guiyang 1
Hanoi 1
Hebei 1
Hounslow 1
Jinan 1
Karlsruhe 1
Kilburn 1
Livorno 1
Longwood 1
Los Angeles 1
Mumbai 1
Münster 1
New Paltz 1
Orlando 1
Pavia 1
Piedimonte Etneo 1
Pune 1
Qingdao 1
Riyadh 1
Sale Marasino 1
Shenyang 1
Shihu 1
St Petersburg 1
Stockholm 1
Tajerouine 1
Tokyo 1
Venice 1
Totale 2.690
Nome #
Silicon carbide for alpha, beta, ion and soft X-ray high performance detectors 221
Polymerization and Characterization of 4,4’-bis(alkylsulfanyl)-2,2’-bithiophenes 212
Far Infrared Vibrational Spectroscopy in CrSi_2 202
Processing high-quality silicon for microstrip detectors 175
Electrical characterization of alloy thin films of VSi2 and V3Si 168
Silicon Carbide and its use as a radiation detector material 165
Electrical and optical properties of silicide single crystals and thin films 157
On the UV responsivity of neutron irradiated 4H-SiC 155
Charge particle detection properties of epitaxial 4H-SiC Schottky diodes 148
Radiation detection properties of 4H-SiC Schottky diodes irradiated up to 10(16) n/cm(2) by 1 MeV neutrons 143
Investigation on the charge collection properties of a 4H-SiC Schottky diode detector 140
Far-infrared spectroscopy of thermally annealed tungsten silicide films 139
Radiation tolerance of epitaxial silicon carbide detectors for electrons, protons and gamma-rays 138
Diffusion coefficient of electrons in silicon 126
Charge particle detection properties of epitaxial 4H-SiC Schottky diodes 113
Electrical and optical properties of near-noble silicides 108
Diffusion coeffcient of electrons in Si 107
Electrical transport properties of V3Si, V5Si3 and VSi2 thin films 101
Electrical and structural characterization of Nb - Si thin film alloys 85
Optical and vibrational properties of Cr and Fe disilicides 80
Effect of heavy proton and neutron irradiations on epitaxial 4H-SiC Schottky diodes 34
Analysis of uniformity of as prepared and irradiated SI GaAs radiation detectors 28
Electric-field behavior and charge-density distribution in semi-insulating gallium arsenide Schottky diodes 27
Epitaxial silicon carbide for X-ray detection 27
Evidence for plasma effect on charge collection efficiency in proton irradiated GaAs detectors 23
Epitaxial silicon carbide charge particle detectors 22
Integration of front-end electronics with GaAs pixel detectors: Experimental and feasibility analysis 22
Characterisation of silicon carbide detectors response to electron and photon irradiation 22
Double-junction effect in proton-irradiated silicon diodes 21
THEORY AND EXPERIMENT ON THE OPTICAL-PROPERTIES OF CRSI2 17
Deep levels in silicon carbide Schottky diodes 17
OPTICAL STUDY OF NIOBIUM DISILICIDE POLYCRYSTALLINE FILMS 15
Electric field distribution in irradiated silicon detectors 14
Influence of substrate on the performance of semi-insulating GaAs detectors 13
PREPARATION OF LOW-NOISE HIGH-QUALITY SILICON MICROSTRIP DETECTORS 2
GAAS SOLID-STATE DETECTORS FOR PARTICLE PHYSICS 2
Deep levels by proton and electron irradiation in 4H-SiC 1
Average energy dissipated by mega-electron-volt hydrogen and helium ions per electron-hole pair generation in 4H-SiC 1
Electronic levels induced by irradiation in 4H-silicon carbide 1
Lateral IBIC analysis of GaAs Schottky diodes 1
Low temperature annealing of electron irradiation induced defects in 4H-SiC 1
Low-noise silicon carbide X-ray sensor with wide operating temperature range 1
Radiation tolerance of epitaxial silicon carbide detectors for electrons and gamma-rays 1
High-bandgap semiconductor dosimeters for radiotherapy applications 1
Characterisation of epitaxial SiC Schottky barriers as particle detectors 1
Investigation of 4H-SiC Schottky diodes by ion beam induced charge (IBIC) technique 1
Low temperature annealing effects on the performance of proton irradiated GaAs detectors 1
Proton induced bulk damage effects in gallium arsenide detectors 1
Improved performance of GaAs radiation detectors with low temperature ohmic contacts 1
The role of the ohmic contact on the efficiency of gallium arsenide radiation detectors 1
Analysis of the active layer in SI GaAs Schottky diodes 1
Optical evaluation of the ionized EL2 fraction in proton (24 GeV) irradiated semi-insulating GaAs 1
Photon radiation damage in high purity silicon and LEC Si gallium arsenide detectors 1
SOME PHYSICAL-PROPERTIES OF RESI1.75 SINGLE-CRYSTALS 1
Performances of SI GaAs detectors fabricated with implanted ohmic contacts. 1
OPTICAL AND ELECTRONIC-PROPERTIES OF 5TH-COLUMN TRANSITION-METAL DISILICIDES 1
OPTICAL-CONSTANTS AND ELECTRICAL TRANSPORT PARAMETERS OF HFSI2 1
OPTICAL AND ELECTRICAL CHARACTERIZATION OF VSI2 AND NBSI2 SINGLE-CRYSTALS 1
INFLUENCE OF ANNEALING TEMPERATURE ON STRUCTURAL, ELECTRICAL AND OPTICAL-PROPERTIES OF WSI2 1
ELECTRICAL AND OPTICAL CHARACTERIZATION OF GDSI2 AND ERSI2 ALLOY THIN-FILMS 1
OPTICAL-PROPERTIES OF WSI2 1
STRUCTURAL AND ELECTRICAL INVESTIGATION OF AMORPHOUS-TO-CRYSTALLINE TRANSFORMATION IN IRON DISILICIDE ALLOY THIN-FILMS 1
ELECTRICAL-TRANSPORT PROPERTIES OF CU3GE THIN-FILMS 1
Electric field and space-charge distribution in SI GaAs:effect of high energy proton irradiation 1
Energy resolution in GaAs X- and gamma-ray detectors 1
Minimum ionizing and alpha particles detectors based on epitaxial semiconductor silicon carbide 1
A new generation of X-ray detectors based on silicon carbide 1
IBIC analysis of gallium arsenide Schottky diodes 1
Electric field and plasma effects on proton-irradiated GaAs detector performance 1
A study of the trap influence on the performance of semi-insulating GaAs detectors 1
INFLUENCE OF ELECTRON TRAPS ON CHARGE-COLLECTION EFFICIENCY IN GAAS RADIATION DETECTORS 1
Microscopic modelling of semi-insulating GaAs detectors 1
PERFORMANCE OF A NEW OHMIC CONTACT FOR GAAS PARTICLE DETECTORS 1
GALLIUM-ARSENIDE PARTICLE DETECTORS - A STUDY OF THE ACTIVE-REGION AND CHARGE-COLLECTION EFFICIENCY 1
Analysis of the output signal waveform and performances of semi-insulating GaAs particle detectors 1
AN OPTICAL-BEAM-INDUCED-CURRENT STUDY OF ACTIVE-REGION AND CHARGE COLLECTION EFFICIENCY OF GAAS PARTICLE DETECTORS 1
Temperature dependent IBIC study of 4H-SiC Schottky diodes 1
Characterisation of SiC by IBIC and other IBA techniques 1
CRYSTALLIZATION, RESISTIVITY AND MICROSTRUCTURE OF METAL SILICON THIN-FILM ALLOYS 1
ELECTRICAL AND MAGNETIC-PROPERTIES OF ERSI2 AND GDSI2 ALLOY THIN-FILMS 1
OPTICAL-PROPERTIES OF POLYCRYSTALLINE NICKEL SILICIDES 1
OPTICAL-PROPERTIES OF PD2SI 1
Electrical and optical characterization of 4H-SiC diodes for particle detection 1
STRUCTURAL AND ELECTRONIC TRANSPORT-PROPERTIES OF RESI2-DELTA SINGLE-CRYSTALS 1
Electrical and optical characterization of electron irradiated X rays detectors based on 4H-SiC epitaxial layers 1
Totale 3.238
Categoria #
all - tutte 15.706
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 15.706


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019155 0 0 0 0 0 0 0 0 0 0 69 86
2019/2020647 46 43 38 41 80 91 88 59 66 29 33 33
2020/2021571 44 11 53 42 62 18 107 62 57 64 39 12
2021/2022359 5 48 46 22 6 28 27 14 38 27 45 53
2022/2023663 60 69 35 74 83 115 7 86 89 6 26 13
2023/2024277 12 25 18 60 58 45 11 37 4 7 0 0
Totale 3.238