In this work we report electrical characterizations on heavily irradiated epitaxial H-4-SiC Schottky diodes. Even after an irradiation at a fluence of 1.4 x 10(16) p/cm(2) and 7 x 10(15) n/cm(2), we found the diodes still able to detect alpha and beta particles with a charge collection efficiency (CCE) ranging from 25 to 30% after proton irradiation and about 18% after neutron irradiation, at the highest reverse bias applied. This corresponds to a charge collection distance (CCD) of 7 mu m after the proton irradiation and 5 mu m after the neutron irradiation. As the irradiation level approaches the range similar to 10(15)/cm(2), the material behaves as intrinsic due to a very high compensation effect.
Effect of heavy proton and neutron irradiations on epitaxial 4H-SiC Schottky diodes / S., Sciortino; F., Hartjes; S., Lagomarsino; Nava, Filippo; M., Brianzi; V., Cindro; C., Lanzieri; M., Moll; P., Vanni. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - 552:1-2(2005), pp. 138-145. [10.1016/j.nima.2005.06.017]
Effect of heavy proton and neutron irradiations on epitaxial 4H-SiC Schottky diodes
NAVA, Filippo;
2005
Abstract
In this work we report electrical characterizations on heavily irradiated epitaxial H-4-SiC Schottky diodes. Even after an irradiation at a fluence of 1.4 x 10(16) p/cm(2) and 7 x 10(15) n/cm(2), we found the diodes still able to detect alpha and beta particles with a charge collection efficiency (CCE) ranging from 25 to 30% after proton irradiation and about 18% after neutron irradiation, at the highest reverse bias applied. This corresponds to a charge collection distance (CCD) of 7 mu m after the proton irradiation and 5 mu m after the neutron irradiation. As the irradiation level approaches the range similar to 10(15)/cm(2), the material behaves as intrinsic due to a very high compensation effect.
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