We report the results of an experimental study on the radiation hardness of 4H-SiC diodes used as alpha-particle detectors with 1 MeV neutrons up to a fluence of 8 x 10(15) n/cm(2). As the irradiation level approaches the range 10(15) n/cm(2), the material behaves as intrinsic due to a very high compensation effect and the diodes are still able to detect with a reasonable good Charge Collection Efficiency (CCE = 80%).For fluences > 10(15) n/cm(2) CCE decreases monotonically to approximate to 20 % at the highest fluence. Heavily irradiated SiC diodes have been studied, by means of Photo Induced Current Transient
Radiation detection properties of 4H-SiC Schottky diodes irradiated up to 10(16) n/cm(2) by 1 MeV neutrons / Nava, Filippo; A., Castaldini; A., Cavallini; P., Errani; V., Cindro. - In: IEEE TRANSACTIONS ON NUCLEAR SCIENCE. - ISSN 0018-9499. - STAMPA. - 53:5(2006), pp. 2977-2982. [10.1109/TNS.2006.882777]
Radiation detection properties of 4H-SiC Schottky diodes irradiated up to 10(16) n/cm(2) by 1 MeV neutrons
NAVA, Filippo;
2006
Abstract
We report the results of an experimental study on the radiation hardness of 4H-SiC diodes used as alpha-particle detectors with 1 MeV neutrons up to a fluence of 8 x 10(15) n/cm(2). As the irradiation level approaches the range 10(15) n/cm(2), the material behaves as intrinsic due to a very high compensation effect and the diodes are still able to detect with a reasonable good Charge Collection Efficiency (CCE = 80%).For fluences > 10(15) n/cm(2) CCE decreases monotonically to approximate to 20 % at the highest fluence. Heavily irradiated SiC diodes have been studied, by means of Photo Induced Current Transient
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