Silicon Carbide and its use as a radiation detector material

We present a comprehensive review of the material properties of the epitaxial 4H silicon carbide polytype. Particular emphasis is placed on those aspects of this material related to high temperature and harsh environment ionizing radiation detector operations.A review of the material characterization methods and electrical contacting issues and how these are related to detector performances is presented.The more recent best data of charge transport across the Schottky barrier and how these are related to spectrometer performance are presented.