We present the first experimental results of X-ray detection and spectroscopy by means of Schottky junctions on epitaxial silicon carbide (SLC). The devices have a junction area of 3 mm(2) on an n-type 4H-SiC layer 30 mum thick with a dopant concentration of 1.8 X 10(15)cm(-3) At 300K, the reverse current density of the best device varies between 2 pA/cm(2) and 18 pA/cm(2) as the mean electric field is increased from 40 kY/cm up to 170 kV/cm. The devices have been tested with X and gamma raysfrom Am-241; the best measured energy resolution is 2.7 keV FWHM at room temperature.
Epitaxial silicon carbide for X-ray detection / G., Bertuccio; R., Casiraghi; Nava, Filippo. - In: IEEE TRANSACTIONS ON NUCLEAR SCIENCE. - ISSN 0018-9499. - 48:2(2001), pp. 232-233. [10.1109/23.915369]
Epitaxial silicon carbide for X-ray detection
NAVA, Filippo
2001
Abstract
We present the first experimental results of X-ray detection and spectroscopy by means of Schottky junctions on epitaxial silicon carbide (SLC). The devices have a junction area of 3 mm(2) on an n-type 4H-SiC layer 30 mum thick with a dopant concentration of 1.8 X 10(15)cm(-3) At 300K, the reverse current density of the best device varies between 2 pA/cm(2) and 18 pA/cm(2) as the mean electric field is increased from 40 kY/cm up to 170 kV/cm. The devices have been tested with X and gamma raysfrom Am-241; the best measured energy resolution is 2.7 keV FWHM at room temperature.
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