We present the first experimental results of X-ray detection and spectroscopy by means of Schottky junctions on epitaxial silicon carbide (SLC). The devices have a junction area of 3 mm(2) on an n-type 4H-SiC layer 30 mum thick with a dopant concentration of 1.8 X 10(15)cm(-3) At 300K, the reverse current density of the best device varies between 2 pA/cm(2) and 18 pA/cm(2) as the mean electric field is increased from 40 kY/cm up to 170 kV/cm. The devices have been tested with X and gamma raysfrom Am-241; the best measured energy resolution is 2.7 keV FWHM at room temperature.

Epitaxial silicon carbide for X-ray detection / G., Bertuccio; R., Casiraghi; Nava, Filippo. - In: IEEE TRANSACTIONS ON NUCLEAR SCIENCE. - ISSN 0018-9499. - 48:(2001), pp. 232-233.

Epitaxial silicon carbide for X-ray detection

NAVA, Filippo
2001-01-01

Abstract

We present the first experimental results of X-ray detection and spectroscopy by means of Schottky junctions on epitaxial silicon carbide (SLC). The devices have a junction area of 3 mm(2) on an n-type 4H-SiC layer 30 mum thick with a dopant concentration of 1.8 X 10(15)cm(-3) At 300K, the reverse current density of the best device varies between 2 pA/cm(2) and 18 pA/cm(2) as the mean electric field is increased from 40 kY/cm up to 170 kV/cm. The devices have been tested with X and gamma raysfrom Am-241; the best measured energy resolution is 2.7 keV FWHM at room temperature.
48
232
233
Epitaxial silicon carbide for X-ray detection / G., Bertuccio; R., Casiraghi; Nava, Filippo. - In: IEEE TRANSACTIONS ON NUCLEAR SCIENCE. - ISSN 0018-9499. - 48:(2001), pp. 232-233.
G., Bertuccio; R., Casiraghi; Nava, Filippo
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/306487
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 64
  • ???jsp.display-item.citation.isi??? 61
social impact