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Impact Ionization and Photon Emission in MOS Capacitors and FETs 1-gen-2000 Palestri, Pierpaolo; M., Pavesi; P., Rigolli; Selmi, Luca; DALLA SERRA, Alberto; Abramo, Antonio; F., Widdershoven; Sangiorgi, Enrico
Integration of solution-processed (7,5) SWCNTs with sputtered and spray-coated metal oxides for flexible complementary inverters 1-gen-2015 Petti, L; Bottacchi, F; Münzenrieder, N; Faber, H; Cantarella, G; Vogt, C; Büthe, L; Namal, I; Späth, F; Hertel, T; Anthopoulos, T; Tröster, G
Investigating the Statistical-Physical Nature of MgO Dielectric Breakdown in STT-MRAM at Different Operating Conditions 1-gen-2019 Lim, J. H.; Raghavan, N.; Padovani, A.; Kwon, J. H.; Yamane, K.; Yang, H.; Naik, V. B.; Larcher, L.; Lee, K. H.; Pey, K. L.
Investigation of the role of H-related defects in Al2O3 blocking layer on charge-trap memory retention by atomistic simulations and device physical modelling 1-gen-2010 Molas, G.; Masoero, L.; Blaise, P.; Padovani, A.; Colonna, J. P.; Vianello, E.; Bocquet, M.; Nowak, E.; Gasulla, M.; Cueto, O.; Grampeix, H.; Martin, F.; Kies, R.; Brianceau, P.; Gely, M.; Papon, A. M.; Lafond, D.; Barnes, J. P.; Licitra, C.; Ghibaudo, G.; Larcher, L.; Deleonibus, S.; De Salvo, B.
Low Field Mobility of Ultra Thin SOI n- and p-MOSFETs: Measurement and Implications on the Performance of Ultra Short MOSFETs 1-gen-2000 Esseni, D.; Mastrapasqua, M.; Celler, G. K.; Baumann, F. H.; Fiegna, C.; Selmi, L; Sangiorgi, E.
Low-Field Mobility and High-Field Drift Velocity in Graphene Nanoribbons and Graphene Bilayers 1-gen-2010 Bresciani, Marco; Paussa, Alan; Palestri, Pierpaolo; Esseni, David; Selmi, Luca
Metal oxide RRAM switching mechanism based on conductive filament microscopic properties 1-gen-2010 G., Bersuker; D. C., Gilmer; D., Veksler; J., Yum; H., Park; S., Lian; Vandelli, Luca; Padovani, Andrea; Larcher, Luca; K., Mckenna; A., Shluger; V., Iglesias; M., Porti; M., Nafría; W., Taylor; P. D., Kirsch; R., Jammy
Microscopic understanding and modeling of HfO2 RRAM device physics 1-gen-2012 Larcher, Luca; Padovani, Andrea; Pirrotta, Onofrio; Vandelli, Luca; G., Bersuker
Mobility in high-K metal gate UTBB-FDSOI devices: From NEGF to TCAD perspectives 1-gen-2013 D., Rideau; Y. M., Niquet; Nier, Oliver; A., Cros; J. P., Manceau; Palestri, Pierpaolo; Esseni, David; V. H., Nguyen; F., Triozon; J. C., Barbe; I., Duchemin; D., Garetto; L., Smith; L., Silvestri; F., Nallet; R., Clerc; O., Weber; F., Andrieu; E., Josse; C., Tavernier; H., Jaouen
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 1-gen-2017 Selmi, L.; Caruso, E.; Carapezzi, S.; Visciarelli, M.; Gnani, E.; Zagni, N.; Pavan, P.; Palestri, P.; Esseni, D.; Gnudi, A.; Reggiani, S.; Puglisi, F. M.; Verzellesi, G.
Monte Carlo Simulation of deca-nanometer MOSFETs for Analog/Mixed-signal and RF applications 1-gen-2006 Eminente, S.; Barin, N.; Palestri, Pierpaolo; Fiegna, C.; Sangiorgi, E.
Multi-subband Monte Carlo modeling of nano-MOSFETs with strong vertical quantization and electron gas degeneration 1-gen-2005 Lucci, Luca; Palestri, Pierpaolo; Esseni, David; Selmi, Luca
Multi-Subband-Monte-Carlo investigation of the mean free path and of the kT layer in degenerated quasi ballistic nanoMOSFETs 1-gen-2006 Palestri, Pierpaolo; Clerc, R; Esseni, David; Lucci, Luca; Selmi, Luca
Multiscale modeling of neuromorphic computing: From materials to device operations 1-gen-2018 Larcher, L.; Padovani, A.; Di Lecce, V.
Nanodevices in flatland: Two-dimensional graphene-based transistors with high I on/I off ratio 1-gen-2011 Fiori, G; Betti, A.; Bruzzone, S.; D'Amico, Pino; Iannaccone, G.
New insight on the charge trapping mechanisms of SiN--based memory by atomistic simulations and electrical modeling 1-gen-2009 Vianello, Elisa; Perniola, L; Blaise, P; Molas, G; COLONNA J., P; Driussi, Francesco; Palestri, Pierpaolo; Esseni, David; Selmi, Luca; Rochat, N; Licitra, C; Lafond, D; Kies, R; Reimbold, G; DE SALVO, B; Boulanger, F.
New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications 1-gen-2022 Asanovski, R.; Grill, A.; Franco, J.; Palestri, P.; Beckers, A.; Kaczer, B.; Selmi, L.
New model of tunnelling current and SILC in ultra-thin oxides 1-gen-1998 Larcher, L.; Paccagnella, A.; Scarpa, A.; Ghidini, G.
Novel 3D random-network model for threshold switching of phase-change memories 1-gen-2013 Piccinini, Enrico; Cappelli, Andrea; Xiong, Feng; Behnam, Ashkan; Buscemi, Fabrizio; Brunetti, Rossella; Rudan, Massimo; Pop, Eric; Jacoboni, Carlo
A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps 1-gen-2012 Meneghini, M.; Bertin, M.; Dal Santo, G.; Stocco, A.; Chini, Alessandro; Marcon, D.; Malinowski, P. E.; Mura, G.; Musu, E.; Vanzi, M.; Meneghesso, G.; Zanoni, E.
Mostrati risultati da 26 a 45 di 63
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