The onset of crystallization in phase-change memory devices is studied by simulating an initially amorphous sample through a disordered network of localized states. The transport of charge and electron energy is self-consistently coupled to the Poisson and the Fourier heat equations, so that crystallization sites are found at the nanoscale. Results show how Ovonic switching and crystallization are both correlated to the formation of hot-carrier conduction paths, and the conditions for the occurrence of these phenomena are investigated. The model is then validated against data from ultra-scaled carbon-nanotube-contacted devices. Device-to-device variability of macroscopically identical devices is also analyzed. publisher = {IEEE}, title = {Novel 3D random-network model for threshold switching of phase-change memories},

Novel 3D random-network model for threshold switching of phase-change memories / Piccinini, Enrico; Cappelli, Andrea; Xiong, Feng; Behnam, Ashkan; Buscemi, Fabrizio; Brunetti, Rossella; Rudan, Massimo; Pop, Eric; Jacoboni, Carlo. - STAMPA. - (2013), pp. 641-644. ((Intervento presentato al convegno IEDM 2013 tenutosi a Washington DC nel 9-11 Dicembre 2013.

Novel 3D random-network model for threshold switching of phase-change memories

CAPPELLI, ANDREA;BUSCEMI, Fabrizio;BRUNETTI, Rossella;JACOBONI, Carlo
2013

Abstract

The onset of crystallization in phase-change memory devices is studied by simulating an initially amorphous sample through a disordered network of localized states. The transport of charge and electron energy is self-consistently coupled to the Poisson and the Fourier heat equations, so that crystallization sites are found at the nanoscale. Results show how Ovonic switching and crystallization are both correlated to the formation of hot-carrier conduction paths, and the conditions for the occurrence of these phenomena are investigated. The model is then validated against data from ultra-scaled carbon-nanotube-contacted devices. Device-to-device variability of macroscopically identical devices is also analyzed. publisher = {IEEE}, title = {Novel 3D random-network model for threshold switching of phase-change memories},
IEDM 2013
Washington DC
9-11 Dicembre 2013
641
644
Piccinini, Enrico; Cappelli, Andrea; Xiong, Feng; Behnam, Ashkan; Buscemi, Fabrizio; Brunetti, Rossella; Rudan, Massimo; Pop, Eric; Jacoboni, Carlo
Novel 3D random-network model for threshold switching of phase-change memories / Piccinini, Enrico; Cappelli, Andrea; Xiong, Feng; Behnam, Ashkan; Buscemi, Fabrizio; Brunetti, Rossella; Rudan, Massimo; Pop, Eric; Jacoboni, Carlo. - STAMPA. - (2013), pp. 641-644. ((Intervento presentato al convegno IEDM 2013 tenutosi a Washington DC nel 9-11 Dicembre 2013.
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

Caricamento pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1062840
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 3
  • ???jsp.display-item.citation.isi??? 0
social impact