We present a multi-scale investigation of graphene-based transistors with a hexagonal boron-carbon-nitride (h-BCN) barrier in the channel. Our approach exploits ab-initio calculations for an accurate extraction of energy bands and tight-binding simulations in order to compute charge transport. We show that the h-BCN barrier inhibits the ambipolar behavior of graphene transistors, leading to a large Ion/Ioff ratio, within the ITRS roadmap specifications for future semiconductor technology nodes.
Nanodevices in flatland: Two-dimensional graphene-based transistors with high I on/I off ratio / Fiori, G; Betti, A.; Bruzzone, S.; D'Amico, Pino; Iannaccone, G.. - (2011), pp. 11.4.1-11.4.4. (Intervento presentato al convegno Electron Devices Meeting (IEDM) tenutosi a Washington, DC nel 5-7 Dec. 2011) [10.1109/IEDM.2011.6131533].
Nanodevices in flatland: Two-dimensional graphene-based transistors with high I on/I off ratio
D'AMICO, PINO;
2011-01-01
Abstract
We present a multi-scale investigation of graphene-based transistors with a hexagonal boron-carbon-nitride (h-BCN) barrier in the channel. Our approach exploits ab-initio calculations for an accurate extraction of energy bands and tight-binding simulations in order to compute charge transport. We show that the h-BCN barrier inhibits the ambipolar behavior of graphene transistors, leading to a large Ion/Ioff ratio, within the ITRS roadmap specifications for future semiconductor technology nodes.
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