This paper presents a new self-consistent MC simulator for the 2D electron gas of nano-MOSFETs. The simulator is two-dimensional in real space and in k-space, and accounts for the electron gas degeneracy in the k-plane. Simulations of thin-film SOI MOSFETs show that the subband structure and the carrier degeneracy strongly affect the transport properties particularly the injection velocity. Our results also point-out the strong anisotropy of the occupation function, which seriously hampers the use of simulators based on the momentum of the BTE
Multi-subband Monte Carlo modeling of nano-MOSFETs with strong vertical quantization and electron gas degeneration / Lucci, Luca; Palestri, Pierpaolo; Esseni, David; Selmi, Luca. - STAMPA. - 2005:(2005), pp. 631-634. (Intervento presentato al convegno IEEE International Electron Device Meeting (IEDM) 2005 tenutosi a Washington, DC, MD, usa nel 5-7 dicembre 2005) [10.1109/IEDM.2005.1609425].
Multi-subband Monte Carlo modeling of nano-MOSFETs with strong vertical quantization and electron gas degeneration
PALESTRI, Pierpaolo;SELMI, Luca
2005
Abstract
This paper presents a new self-consistent MC simulator for the 2D electron gas of nano-MOSFETs. The simulator is two-dimensional in real space and in k-space, and accounts for the electron gas degeneracy in the k-plane. Simulations of thin-film SOI MOSFETs show that the subband structure and the carrier degeneracy strongly affect the transport properties particularly the injection velocity. Our results also point-out the strong anisotropy of the occupation function, which seriously hampers the use of simulators based on the momentum of the BTE
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