This paper aims to review important theoretical and experimental aspects of both electrostatics and channel mobility in High-K Metal Gate UTBB-FDSOI MOSFETs. A simulation chain, including advanced quantum solvers, and semi-empirical Technology Computer Assisted Design (TCAD) tools is presented.
Mobility in high-K metal gate UTBB-FDSOI devices: From NEGF to TCAD perspectives / D., Rideau; Y. M., Niquet; Nier, Oliver; A., Cros; J. P., Manceau; Palestri, Pierpaolo; Esseni, David; V. H., Nguyen; F., Triozon; J. C., Barbe; I., Duchemin; D., Garetto; L., Smith; L., Silvestri; F., Nallet; R., Clerc; O., Weber; F., Andrieu; E., Josse; C., Tavernier; H., Jaouen. - (2013), pp. 12.5.1-12.5.4. (Intervento presentato al convegno 2013 IEEE International Electron Devices Meeting, IEDM 2013 tenutosi a Washington, DC, usa nel 9-11 Dicembre 2013) [10.1109/IEDM.2013.6724617].
Mobility in high-K metal gate UTBB-FDSOI devices: From NEGF to TCAD perspectives
PALESTRI, Pierpaolo;ESSENI, David;
2013
Abstract
This paper aims to review important theoretical and experimental aspects of both electrostatics and channel mobility in High-K Metal Gate UTBB-FDSOI MOSFETs. A simulation chain, including advanced quantum solvers, and semi-empirical Technology Computer Assisted Design (TCAD) tools is presented.
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