This paper aims to review important theoretical and experimental aspects of both electrostatics and channel mobility in High-K Metal Gate UTBB-FDSOI MOSFETs. A simulation chain, including advanced quantum solvers, and semi-empirical Technology Computer Assisted Design (TCAD) tools is presented.
Mobility in high-K metal gate UTBB-FDSOI devices: From NEGF to TCAD perspectives / D., R., Y. M., N., Nier, O., A., C., J. P., M., Palestri, P., Esseni, D., V. H., N., F., T., J. C., B., I., D., D., G., L., S., L., S., F., N., R., C., O., W., F., A., E., J., C., T., et al.. - (2013), pp. 12.5.1-12.5.4. (2013 IEEE International Electron Devices Meeting, IEDM 2013 Washington, DC, usa 9-11 Dicembre 2013) [10.1109/IEDM.2013.6724617].
Mobility in high-K metal gate UTBB-FDSOI devices: From NEGF to TCAD perspectives
PALESTRI, Pierpaolo;ESSENI, David;
2013
Abstract
This paper aims to review important theoretical and experimental aspects of both electrostatics and channel mobility in High-K Metal Gate UTBB-FDSOI MOSFETs. A simulation chain, including advanced quantum solvers, and semi-empirical Technology Computer Assisted Design (TCAD) tools is presented.
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