Electron and hole effective mobilities of ultra-thin SOI N- and P-MOSFETs have been measured at different temperatures using a special test structure able to circumvent parasitic resistance effects. At large inversion densities (N/sub inv/) ultra-thin SOI mobility can be higher than in heavily doped bulk MOS due a lower effective field and it is largely insensitive to silicon thickness (T/sub SI/). However, at small Ni/sub inv/ the mobility is clearly reduced for decreasing T/sub SI/. The effective mobility data are used to study the implications for ultra-short MOS transistor performance at device simulation level.

Low Field Mobility of Ultra Thin SOI n- and p-MOSFETs: Measurement and Implications on the Performance of Ultra Short MOSFETs / Esseni, D.; Mastrapasqua, M.; Celler, G. K.; Baumann, F. H.; Fiegna, C.; Selmi, L; Sangiorgi, E.. - STAMPA. - (2000), pp. 671-674. (Intervento presentato al convegno IEEE International Electron Devices Meeting (IEDM) tenutosi a SAN FRANCISCO, CA nel DEC 10-13, 2000) [10.1109/IEDM.2000.904408].

Low Field Mobility of Ultra Thin SOI n- and p-MOSFETs: Measurement and Implications on the Performance of Ultra Short MOSFETs

SELMI L;
2000

Abstract

Electron and hole effective mobilities of ultra-thin SOI N- and P-MOSFETs have been measured at different temperatures using a special test structure able to circumvent parasitic resistance effects. At large inversion densities (N/sub inv/) ultra-thin SOI mobility can be higher than in heavily doped bulk MOS due a lower effective field and it is largely insensitive to silicon thickness (T/sub SI/). However, at small Ni/sub inv/ the mobility is clearly reduced for decreasing T/sub SI/. The effective mobility data are used to study the implications for ultra-short MOS transistor performance at device simulation level.
2000
IEEE International Electron Devices Meeting (IEDM)
SAN FRANCISCO, CA
DEC 10-13, 2000
671
674
Esseni, D.; Mastrapasqua, M.; Celler, G. K.; Baumann, F. H.; Fiegna, C.; Selmi, L; Sangiorgi, E.
Low Field Mobility of Ultra Thin SOI n- and p-MOSFETs: Measurement and Implications on the Performance of Ultra Short MOSFETs / Esseni, D.; Mastrapasqua, M.; Celler, G. K.; Baumann, F. H.; Fiegna, C.; Selmi, L; Sangiorgi, E.. - STAMPA. - (2000), pp. 671-674. (Intervento presentato al convegno IEEE International Electron Devices Meeting (IEDM) tenutosi a SAN FRANCISCO, CA nel DEC 10-13, 2000) [10.1109/IEDM.2000.904408].
File in questo prodotto:
File Dimensione Formato  
2000_12_IEDM_Esseni_LowFieldMobility.pdf

Accesso riservato

Dimensione 359.52 kB
Formato Adobe PDF
359.52 kB Adobe PDF   Visualizza/Apri   Richiedi una copia
Pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1163091
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 93
  • ???jsp.display-item.citation.isi??? 89
social impact