In this paper, a multiscale modeling platform for neuromorphic computing devices connecting the atomic material properties to the electrical device performances is presented. The main ingredients of the modeling platform are discussed in view of the different technologies (e.g. RRAM, PCM, FTJ) proposed for 3D integrated neuromorphic computing.

Multiscale modeling of neuromorphic computing: From materials to device operations / Larcher, L.; Padovani, A.; Di Lecce, V.. - (2018), pp. 11.7.1-11.7.4. (Intervento presentato al convegno 63rd IEEE International Electron Devices Meeting, IEDM 2017 tenutosi a usa nel 2017) [10.1109/IEDM.2017.8268374].

Multiscale modeling of neuromorphic computing: From materials to device operations

Larcher L.;Padovani A.;Di Lecce V.
2018

Abstract

In this paper, a multiscale modeling platform for neuromorphic computing devices connecting the atomic material properties to the electrical device performances is presented. The main ingredients of the modeling platform are discussed in view of the different technologies (e.g. RRAM, PCM, FTJ) proposed for 3D integrated neuromorphic computing.
2018
2017
63rd IEEE International Electron Devices Meeting, IEDM 2017
usa
2017
11.7.1
11.7.4
Larcher, L.; Padovani, A.; Di Lecce, V.
Multiscale modeling of neuromorphic computing: From materials to device operations / Larcher, L.; Padovani, A.; Di Lecce, V.. - (2018), pp. 11.7.1-11.7.4. (Intervento presentato al convegno 63rd IEEE International Electron Devices Meeting, IEDM 2017 tenutosi a usa nel 2017) [10.1109/IEDM.2017.8268374].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1223191
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