In this work, we use atomistic simulation, consolidated by a detailed Al2O3 physico-chemical material analysis, to investigate the origin of traps in Al2O3 (in particular, Al- or O-vacancies and H-interstitials). It is shown that the leakage currents through Al2O3 layers, with different post-deposition anneals, are strictly correlated to the H content. Then, for the first time at our knowledge, the hydrogen-based trap features estimated by quantum simulations are introduced in a TANOS device simulator. A very good agreement is obtained between model and device experimental data, allowing for a clear understanding of the role of alumina H content on the retention characteristics of charge-trap memories. ©2010 IEEE.
Investigation of the role of H-related defects in Al2O3 blocking layer on charge-trap memory retention by atomistic simulations and device physical modelling / Molas, G.; Masoero, L.; Blaise, P.; Padovani, A.; Colonna, J. P.; Vianello, E.; Bocquet, M.; Nowak, E.; Gasulla, M.; Cueto, O.; Grampeix, H.; Martin, F.; Kies, R.; Brianceau, P.; Gely, M.; Papon, A. M.; Lafond, D.; Barnes, J. P.; Licitra, C.; Ghibaudo, G.; Larcher, L.; Deleonibus, S.; De Salvo, B.. - (2010), pp. 22.5.4-22.5.4. (Intervento presentato al convegno 2010 IEEE International Electron Devices Meeting, IEDM 2010 tenutosi a San Francisco, CA, usa nel 2010) [10.1109/IEDM.2010.5703414].
Investigation of the role of H-related defects in Al2O3 blocking layer on charge-trap memory retention by atomistic simulations and device physical modelling
Padovani A.;Larcher L.;
2010
Abstract
In this work, we use atomistic simulation, consolidated by a detailed Al2O3 physico-chemical material analysis, to investigate the origin of traps in Al2O3 (in particular, Al- or O-vacancies and H-interstitials). It is shown that the leakage currents through Al2O3 layers, with different post-deposition anneals, are strictly correlated to the H content. Then, for the first time at our knowledge, the hydrogen-based trap features estimated by quantum simulations are introduced in a TANOS device simulator. A very good agreement is obtained between model and device experimental data, allowing for a clear understanding of the role of alumina H content on the retention characteristics of charge-trap memories. ©2010 IEEE.
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