This paper examines, by means of multi-subband-Monte-Carlo (MSMC) simulations, the prediction of the well known compact formula for back-scattering in nanoMOSFETs, analyzing the effect of carrier degeneracy and complex scattering mechanisms on the back-scattering. The paper also addresses the definition of an appropriate mean-free-path and its relationship to the low-field mobility

Multi-Subband-Monte-Carlo investigation of the mean free path and of the kT layer in degenerated quasi ballistic nanoMOSFETs / Palestri, Pierpaolo; Clerc, R; Esseni, David; Lucci, Luca; Selmi, Luca. - STAMPA. - (2006), pp. 945-948. (Intervento presentato al convegno Proceedings International Electron Device Meeting, IEDM tenutosi a San Francisco (USA). nel 11-12/12/2006) [10.1109/IEDM.2006.346940].

Multi-Subband-Monte-Carlo investigation of the mean free path and of the kT layer in degenerated quasi ballistic nanoMOSFETs

SELMI, Luca
2006-01-01

Abstract

This paper examines, by means of multi-subband-Monte-Carlo (MSMC) simulations, the prediction of the well known compact formula for back-scattering in nanoMOSFETs, analyzing the effect of carrier degeneracy and complex scattering mechanisms on the back-scattering. The paper also addresses the definition of an appropriate mean-free-path and its relationship to the low-field mobility
2006
Proceedings International Electron Device Meeting, IEDM
San Francisco (USA).
11-12/12/2006
945
948
Palestri, Pierpaolo; Clerc, R; Esseni, David; Lucci, Luca; Selmi, Luca
Multi-Subband-Monte-Carlo investigation of the mean free path and of the kT layer in degenerated quasi ballistic nanoMOSFETs / Palestri, Pierpaolo; Clerc, R; Esseni, David; Lucci, Luca; Selmi, Luca. - STAMPA. - (2006), pp. 945-948. (Intervento presentato al convegno Proceedings International Electron Device Meeting, IEDM tenutosi a San Francisco (USA). nel 11-12/12/2006) [10.1109/IEDM.2006.346940].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1162908
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