This paper examines, by means of multi-subband-Monte-Carlo (MSMC) simulations, the prediction of the well known compact formula for back-scattering in nanoMOSFETs, analyzing the effect of carrier degeneracy and complex scattering mechanisms on the back-scattering. The paper also addresses the definition of an appropriate mean-free-path and its relationship to the low-field mobility
Multi-Subband-Monte-Carlo investigation of the mean free path and of the kT layer in degenerated quasi ballistic nanoMOSFETs / Palestri, Pierpaolo; Clerc, R; Esseni, David; Lucci, Luca; Selmi, Luca. - STAMPA. - (2006), pp. 945-948. (Intervento presentato al convegno Proceedings International Electron Device Meeting, IEDM tenutosi a San Francisco (USA). nel 11-12/12/2006) [10.1109/IEDM.2006.346940].
Multi-Subband-Monte-Carlo investigation of the mean free path and of the kT layer in degenerated quasi ballistic nanoMOSFETs
PALESTRI, Pierpaolo;SELMI, Luca
2006
Abstract
This paper examines, by means of multi-subband-Monte-Carlo (MSMC) simulations, the prediction of the well known compact formula for back-scattering in nanoMOSFETs, analyzing the effect of carrier degeneracy and complex scattering mechanisms on the back-scattering. The paper also addresses the definition of an appropriate mean-free-path and its relationship to the low-field mobility
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