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Mostrati risultati da 5 a 24 di 63
Titolo Data di pubblicazione Autore(i) File
Breakdown in the metal/high-k gate stack: Identifying the “weak link” in the multilayer dielectric 1-gen-2008 G., Bersuker; D., Heh; C., Young; H., Park; P., Khanal; Larcher, Luca; Padovani, Andrea; P., Lenahan; J., Ryan; B. H., Lee; H., Tseng; R., Jammy
Characterization and modelling of low-frequency noise in PCM devices 1-gen-2008 P., Fantini; G., Betti Beneventi; A., Calderoni; Larcher, Luca; Pavan, Paolo; F., Pellizzer
CMOS and Interconnect Reliability - Flash Reliability/Hot Carrier Effects 1-gen-2003 Pavan, P.; Owens, A.
CMOS and interconnect reliability-non-volatile memory reliability 1-gen-2006 Visconti, A.; Larcher, L.
Coexistence of volatile and non-volatile resistive switching in 2D h-BN based electronic synapses 1-gen-2018 Shi, Y.; Pan, C.; Chen, V.; Raghavan, N.; Pey, K. L.; Puglisi, F. M.; Pop, E.; Wong, H. -S. P.; Lanza, M.
Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices 1-gen-2011 Vandelli, Luca; Padovani, Andrea; Larcher, Luca; G., Broglia; G., Ori; Montorsi, Monia; G., Bersuker; Pavan, Paolo
Connecting the physical and electrical properties of Hafnia-based RRAM 1-gen-2013 B., Butcher; G., Bersuker; D., Gilmer; P., Kirsch; Larcher, Luca; Padovani, Andrea; Vandelli, Luca; R., Geer; P. D., Kirsch
Correlation between DC and rf degradation due to deep levels in AlGaN/GaN HEMTs 1-gen-2009 Chini, Alessandro; Fantini, Fausto; DI LECCE, Valerio; Esposto, Michele; Stocco, A.; Ronchi, N.; Zanon, F.; Meneghesso, G.; Zanoni, E.
Deconvoluting charge trapping and nucleation interplay in FeFETs: Kinetics and Reliability 1-gen-2019 Pesic, M.; Padovani, A.; Slcsazeck, S.; Mikolajick, T.; Larcher, L.
Demonstration of Improved Transient Response of Inverters with Steep Slope Strained Si NW TFETs by Reduction of TAT with Pulsed I-V and NW Scaling 1-gen-2013 L., Knoll; Q. T., Zhao; A., Nichau; S., Richter; G. V., Luong; S., Trellenkamp; A., Schäfer; Selmi, Luca; K. K., Bourdelle; S., Mantl
Design and Optimization of β-Ga 2 O 3 on (h-BN layered) Sapphire for High Efficiency Power Transistors: A Device-Circuit-Package Perspective 1-gen-2018 Mahajan, B. K.; Chen, Y. -P.; Ahn, W.; Zagni, N.; Alam, M. A.
Deuterium Effect on Interface States and SILC Generation in the CHE Stress Conditions: A Comparative Study 1-gen-2000 Esseni, David; Bude, J.; Selmi, Luca
Diagnosis of trapping phenomena in GaN MESFETs 1-gen-2000 Meneghesso, G; Chini, Alessandro; Zanoni, E.; Manfredi, M.; Pavesi, M.; Boudart, B.; Gaquiere, C.
Electroluminescence analysis of time-dependent reverse-bias degradation of HEMTs: A complete model 1-gen-2011 M., Meneghini; A., Stocco; M., Bertin; N., Ronchi; Chini, Alessandro; D., Marcon; G., Meneghesso; E., Zanoni
Enhanced Ballisticity in nano-MOSFETs along the ITRS Roadmap: A Monte Carlo Study 1-gen-2004 S., Eminente; Esseni, David; Palestri, Pierpaolo; C., Fiegna; Selmi, Luca; E., Sangiorgi
Experimental and physics-based modeling assessment of strain induced mobility enhancement in FinFETs 1-gen-2009 Serra, N; Conzatti, F; Esseni, David; DE MICHIELIS, M; Palestri, Pierpaolo; Selmi, Luca; Thomas, S; WHALL T., E; PARKER E. H., C; LEADLEY D., R; Witters, L; Hikavyy, A; HYTCH M., J; Houdellier, F; Snoeck, E; WANG T., J; LEE W., C; Vellianitis, G; VAN DAL M. J., H; Duriez, B; Doornbos, G; Lander, R. J. P.
Experimental and Theoretical Study of Electrode Effects in HfO2 based RRAM 1-gen-2011 C., Cagli; J., Buckley; V., Jousseaume; A., Salaun; H., Grampeix; J. F., Nodin; H., Feldis; A., Persico; J., Cluzel; P., Lorenzi; L., Massari; R., Rao; F., Irrera; T., Cabout; F., Aussenac; C., Carabasse; M., Coue; P., Calka; E., Martinez; L., Perniola; P., Blaise; Z., Fang; Y. H., Yu; G., Ghibaudo; D., Deleruyelle; M., Bocquet; C., Muller; Padovani, Andrea; Pirrotta, Onofrio; Vandelli, Luca; Larcher, Luca; G., Reimbold; B., de Salvo
Experimental Extraction of Charge Centroid and of Charge Type in the P/E operation of SONOS Memory Cells 1-gen-2006 Arreghini, Antonio; Driussi, Francesco; Esseni, David; Selmi, Luca; VAN DUUREN, M. J.; VAN SCHAIJK, R.
An Experimental Study of Low Field Electron Mobility in Double-Gate, Ultra-Thin SOI MOSFETs 1-gen-2001 Esseni, David; M., Mastrapasqua; C., Fiegna; G. K., Celler; Selmi, Luca; Sangiorgi, Enrico
Experimental/numerical investigation on current collapse in AlGaN/GaN HEMT’s 1-gen-2002 Verzellesi, Giovanni; Pierobon, R.; Rampazzo, F.; Meneghesso, G.; Chini, Alessandro; Mishra, U. K.; Canali, Claudio; Zanoni, E.
Mostrati risultati da 5 a 24 di 63
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