Low-frequency noise in PCM devices is experimentally investigated providing a new physical model for the amorphous GST (Ge2Sb2Te5) material. Noise intensity is characterized and modelled as a function of bias, temperature and size. Findings from 1/f noise analysis are used to understand the drift mechanism of the amorphous state resistance.

Characterization and modelling of low-frequency noise in PCM devices / P., Fantini; G., Betti Beneventi; A., Calderoni; Larcher, Luca; Pavan, Paolo; F., Pellizzer. - STAMPA. - (2008), pp. 1-4. ((Intervento presentato al convegno Electron Devices Meeting, 2008. IEDM 2008. IEEE International tenutosi a San Francisco, CA (USA) nel 15-17 Dec. 2008.

Characterization and modelling of low-frequency noise in PCM devices

LARCHER, Luca;PAVAN, Paolo;
2008-01-01

Abstract

Low-frequency noise in PCM devices is experimentally investigated providing a new physical model for the amorphous GST (Ge2Sb2Te5) material. Noise intensity is characterized and modelled as a function of bias, temperature and size. Findings from 1/f noise analysis are used to understand the drift mechanism of the amorphous state resistance.
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
San Francisco, CA (USA)
15-17 Dec. 2008
1
4
P., Fantini; G., Betti Beneventi; A., Calderoni; Larcher, Luca; Pavan, Paolo; F., Pellizzer
Characterization and modelling of low-frequency noise in PCM devices / P., Fantini; G., Betti Beneventi; A., Calderoni; Larcher, Luca; Pavan, Paolo; F., Pellizzer. - STAMPA. - (2008), pp. 1-4. ((Intervento presentato al convegno Electron Devices Meeting, 2008. IEDM 2008. IEEE International tenutosi a San Francisco, CA (USA) nel 15-17 Dec. 2008.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/634606
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