In this work we present results related to the current/voltage characteristics collapse in GaN MESFETs. Two different failure mechanisms were observed, one of them clearly consists in a positive threshold voltage shift. Traps responsible for the "current collapse" were also characterized by means of different measurement techniques. Phototransient experiments show the presence of a capture barrier of 0.1 eV while by a spectroscopic technique four photoionization energy levels were estimated. Finally, electroluminescence measurements shows the presence of visible and UV light, suggesting the presence of a self-recovery mechanisms.
Diagnosis of trapping phenomena in GaN MESFETs / Meneghesso, G; Chini, Alessandro; Zanoni, E.; Manfredi, M.; Pavesi, M.; Boudart, B.; Gaquiere, C.. - (2000), pp. 389-392. (Intervento presentato al convegno N/A tenutosi a N/A nel N/A) [10.1109/IEDM.2000.904338].
Diagnosis of trapping phenomena in GaN MESFETs
CHINI, Alessandro;
2000
Abstract
In this work we present results related to the current/voltage characteristics collapse in GaN MESFETs. Two different failure mechanisms were observed, one of them clearly consists in a positive threshold voltage shift. Traps responsible for the "current collapse" were also characterized by means of different measurement techniques. Phototransient experiments show the presence of a capture barrier of 0.1 eV while by a spectroscopic technique four photoionization energy levels were estimated. Finally, electroluminescence measurements shows the presence of visible and UV light, suggesting the presence of a self-recovery mechanisms.
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