We apply a systematic approach to identify a high-k/metal gate stack degradation mechanism. Our results demonstrate that the SiO2 interfacial layer controls the overall degradation and breakdown of the high-k gate stacks stressed in inversion. Defects contributing to the gate stack degradation are associated with the high-k/metal-induced oxygen vacancies in the interfacial layer.

Breakdown in the metal/high-k gate stack: Identifying the “weak link” in the multilayer dielectric / G., Bersuker; D., Heh; C., Young; H., Park; P., Khanal; Larcher, Luca; Padovani, Andrea; P., Lenahan; J., Ryan; B. H., Lee; H., Tseng; R., Jammy. - STAMPA. - (2008), pp. 1-4. (Intervento presentato al convegno 2008 IEEE International Electron Devices Meeting, IEDM 2008 tenutosi a San Francisco, CA (USA) nel 15-17 Dec. 2008) [10.1109/IEDM.2008.4796816].

Breakdown in the metal/high-k gate stack: Identifying the “weak link” in the multilayer dielectric

LARCHER, Luca;PADOVANI, ANDREA;
2008

Abstract

We apply a systematic approach to identify a high-k/metal gate stack degradation mechanism. Our results demonstrate that the SiO2 interfacial layer controls the overall degradation and breakdown of the high-k gate stacks stressed in inversion. Defects contributing to the gate stack degradation are associated with the high-k/metal-induced oxygen vacancies in the interfacial layer.
2008
2008 IEEE International Electron Devices Meeting, IEDM 2008
San Francisco, CA (USA)
15-17 Dec. 2008
1
4
G., Bersuker; D., Heh; C., Young; H., Park; P., Khanal; Larcher, Luca; Padovani, Andrea; P., Lenahan; J., Ryan; B. H., Lee; H., Tseng; R., Jammy...espandi
Breakdown in the metal/high-k gate stack: Identifying the “weak link” in the multilayer dielectric / G., Bersuker; D., Heh; C., Young; H., Park; P., Khanal; Larcher, Luca; Padovani, Andrea; P., Lenahan; J., Ryan; B. H., Lee; H., Tseng; R., Jammy. - STAMPA. - (2008), pp. 1-4. (Intervento presentato al convegno 2008 IEEE International Electron Devices Meeting, IEDM 2008 tenutosi a San Francisco, CA (USA) nel 15-17 Dec. 2008) [10.1109/IEDM.2008.4796816].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/634607
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