We apply a systematic approach to identify a high-k/metal gate stack degradation mechanism. Our results demonstrate that the SiO2 interfacial layer controls the overall degradation and breakdown of the high-k gate stacks stressed in inversion. Defects contributing to the gate stack degradation are associated with the high-k/metal-induced oxygen vacancies in the interfacial layer.

Breakdown in the metal/high-k gate stack: Identifying the “weak link” in the multilayer dielectric / G., Bersuker; D., Heh; C., Young; H., Park; P., Khanal; Larcher, Luca; Padovani, Andrea; P., Lenahan; J., Ryan; B. H., Lee; H., Tseng; R., Jammy. - STAMPA. - (2008), pp. 1-4. ((Intervento presentato al convegno 2008 IEEE International Electron Devices Meeting, IEDM 2008 tenutosi a San Francisco, CA (USA) nel 15-17 Dec. 2008 [10.1109/IEDM.2008.4796816].

Breakdown in the metal/high-k gate stack: Identifying the “weak link” in the multilayer dielectric

LARCHER, Luca;PADOVANI, ANDREA;
2008

Abstract

We apply a systematic approach to identify a high-k/metal gate stack degradation mechanism. Our results demonstrate that the SiO2 interfacial layer controls the overall degradation and breakdown of the high-k gate stacks stressed in inversion. Defects contributing to the gate stack degradation are associated with the high-k/metal-induced oxygen vacancies in the interfacial layer.
2008 IEEE International Electron Devices Meeting, IEDM 2008
San Francisco, CA (USA)
15-17 Dec. 2008
1
4
G., Bersuker; D., Heh; C., Young; H., Park; P., Khanal; Larcher, Luca; Padovani, Andrea; P., Lenahan; J., Ryan; B. H., Lee; H., Tseng; R., Jammy
Breakdown in the metal/high-k gate stack: Identifying the “weak link” in the multilayer dielectric / G., Bersuker; D., Heh; C., Young; H., Park; P., Khanal; Larcher, Luca; Padovani, Andrea; P., Lenahan; J., Ryan; B. H., Lee; H., Tseng; R., Jammy. - STAMPA. - (2008), pp. 1-4. ((Intervento presentato al convegno 2008 IEEE International Electron Devices Meeting, IEDM 2008 tenutosi a San Francisco, CA (USA) nel 15-17 Dec. 2008 [10.1109/IEDM.2008.4796816].
File in questo prodotto:
Non ci sono file associati a questo prodotto.
Pubblicazioni consigliate

Caricamento pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11380/634607
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 66
  • ???jsp.display-item.citation.isi??? 39
social impact