We apply a systematic approach to identify a high-k/metal gate stack degradation mechanism. Our results demonstrate that the SiO2 interfacial layer controls the overall degradation and breakdown of the high-k gate stacks stressed in inversion. Defects contributing to the gate stack degradation are associated with the high-k/metal-induced oxygen vacancies in the interfacial layer.
Breakdown in the metal/high-k gate stack: Identifying the “weak link” in the multilayer dielectric / G., B., D., H., C., Y., H., P., P., K., Larcher, L., Padovani, A., P., L., J., R., B. H., L., H., T., R., J.. - STAMPA. - (2008), pp. 1-4. (2008 IEEE International Electron Devices Meeting, IEDM 2008 San Francisco, CA (USA) 15-17 Dec. 2008) [10.1109/IEDM.2008.4796816].
Breakdown in the metal/high-k gate stack: Identifying the “weak link” in the multilayer dielectric
LARCHER, Luca;PADOVANI, ANDREA;
2008
Abstract
We apply a systematic approach to identify a high-k/metal gate stack degradation mechanism. Our results demonstrate that the SiO2 interfacial layer controls the overall degradation and breakdown of the high-k gate stacks stressed in inversion. Defects contributing to the gate stack degradation are associated with the high-k/metal-induced oxygen vacancies in the interfacial layer.
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