In this work we have simulated the ION and its ballistic limit I-BL of MOSFETs designed according to the 2003 Roadmap down to the 45 nm node, by using a Full-Band, self-consistent Monte Carlo simulator with quantum mechanical corrections. Our results show that scattering plays an important role by limiting the current for gate length down to at least 14 nm; the impact of quasi-ballistic transport increases for L-G below approximately 50 nm and contribute most part of the ION improvements related to scaling. Thanks to a lower transversal electric field, the DG SOI MOSFETs with low channel doping allow to get closer to the ballistic limit than bulk counterparts.
Enhanced Ballisticity in nano-MOSFETs along the ITRS Roadmap: A Monte Carlo Study / S., Eminente; Esseni, David; Palestri, Pierpaolo; C., Fiegna; Selmi, Luca; E., Sangiorgi. - STAMPA. - (2004), pp. 609-612. (Intervento presentato al convegno International Electron Devices Meeting (IEDM) tenutosi a San Francisco (USA) nel Dec. 2004) [10.1109/IEDM.2004.1419235].
Enhanced Ballisticity in nano-MOSFETs along the ITRS Roadmap: A Monte Carlo Study
SELMI, Luca;
2004-01-01
Abstract
In this work we have simulated the ION and its ballistic limit I-BL of MOSFETs designed according to the 2003 Roadmap down to the 45 nm node, by using a Full-Band, self-consistent Monte Carlo simulator with quantum mechanical corrections. Our results show that scattering plays an important role by limiting the current for gate length down to at least 14 nm; the impact of quasi-ballistic transport increases for L-G below approximately 50 nm and contribute most part of the ION improvements related to scaling. Thanks to a lower transversal electric field, the DG SOI MOSFETs with low channel doping allow to get closer to the ballistic limit than bulk counterparts.
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