This paper investigates the generation of interface states (N/sub it/) and stress induced leakage current (SILC) in the stress regime of channel hot electrons (CHE) and the possible beneficial effect of deuterium annealing. Our results show that no isotope effect is observed on SILC even when a large isotope effect is simultaneously observed on N/sub it/. The generation of SILC seems to be always correlated to hot holes injection (HHI) whereas two different generation mechanisms for N/sub it/ can be identified.
Deuterium Effect on Interface States and SILC Generation in the CHE Stress Conditions: A Comparative Study / Esseni, David; Bude, J.; Selmi, Luca. - (2000), pp. 339-342. (Intervento presentato al convegno IEEE International Electron Devices Meeting (IEDM) tenutosi a SAN FRANCISCO, CA nel DEC 10-13, 2000) [10.1109/IEDM.2000.904325].
Deuterium Effect on Interface States and SILC Generation in the CHE Stress Conditions: A Comparative Study
SELMI, Luca
2000
Abstract
This paper investigates the generation of interface states (N/sub it/) and stress induced leakage current (SILC) in the stress regime of channel hot electrons (CHE) and the possible beneficial effect of deuterium annealing. Our results show that no isotope effect is observed on SILC even when a large isotope effect is simultaneously observed on N/sub it/. The generation of SILC seems to be always correlated to hot holes injection (HHI) whereas two different generation mechanisms for N/sub it/ can be identified.
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