Sfoglia per Serie
Characterization and modelling of low-frequency noise in PCM devices
2008 P., Fantini; G., Betti Beneventi; A., Calderoni; Larcher, Luca; Pavan, Paolo; F., Pellizzer
CMOS and Interconnect Reliability - Flash Reliability/Hot Carrier Effects
2003 Pavan, P.; Owens, A.
Coexistence of volatile and non-volatile resistive switching in 2D h-BN based electronic synapses
2018 Shi, Y.; Pan, C.; Chen, V.; Raghavan, N.; Pey, K. L.; Puglisi, F. M.; Pop, E.; Wong, H. -S. P.; Lanza, M.
Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices
2011 Vandelli, Luca; Padovani, Andrea; Larcher, Luca; G., Broglia; G., Ori; Montorsi, Monia; G., Bersuker; Pavan, Paolo
Connecting the physical and electrical properties of Hafnia-based RRAM
2013 B., Butcher; G., Bersuker; D., Gilmer; P., Kirsch; Larcher, Luca; Padovani, Andrea; Vandelli, Luca; R., Geer; P. D., Kirsch
Deconvoluting charge trapping and nucleation interplay in FeFETs: Kinetics and Reliability
2019 Pesic, M.; Padovani, A.; Slcsazeck, S.; Mikolajick, T.; Larcher, L.
Demonstration of Improved Transient Response of Inverters with Steep Slope Strained Si NW TFETs by Reduction of TAT with Pulsed I-V and NW Scaling
2013 L., Knoll; Q. T., Zhao; A., Nichau; S., Richter; G. V., Luong; S., Trellenkamp; A., Schäfer; Selmi, Luca; K. K., Bourdelle; S., Mantl
Design and Optimization of β-Ga 2 O 3 on (h-BN layered) Sapphire for High Efficiency Power Transistors: A Device-Circuit-Package Perspective
2018 Mahajan, B. K.; Chen, Y. -P.; Ahn, W.; Zagni, N.; Alam, M. A.
Electroluminescence analysis of time-dependent reverse-bias degradation of HEMTs: A complete model
2011 M., Meneghini; A., Stocco; M., Bertin; N., Ronchi; Chini, Alessandro; D., Marcon; G., Meneghesso; E., Zanoni
An Experimental Study of Low Field Electron Mobility in Double-Gate, Ultra-Thin SOI MOSFETs
2001 Esseni, David; M., Mastrapasqua; C., Fiegna; G. K., Celler; Selmi, Luca; Sangiorgi, Enrico
Flexible CMOS electronics based on p-type Ge2Sb2Te5 and n-type InGaZnO4 semiconductors
2018 Daus, A.; Han, S.; Knobelspies, S.; Cantarella, G.; Vogt, C.; Munzenrieder, N.; Troster, G.
Integration of solution-processed (7,5) SWCNTs with sputtered and spray-coated metal oxides for flexible complementary inverters
2015 Petti, L; Bottacchi, F; Münzenrieder, N; Faber, H; Cantarella, G; Vogt, C; Büthe, L; Namal, I; Späth, F; Hertel, T; Anthopoulos, T; Tröster, G
Investigating the Statistical-Physical Nature of MgO Dielectric Breakdown in STT-MRAM at Different Operating Conditions
2019 Lim, J. H.; Raghavan, N.; Padovani, A.; Kwon, J. H.; Yamane, K.; Yang, H.; Naik, V. B.; Larcher, L.; Lee, K. H.; Pey, K. L.
Investigation of the role of H-related defects in Al2O3 blocking layer on charge-trap memory retention by atomistic simulations and device physical modelling
2010 Molas, G.; Masoero, L.; Blaise, P.; Padovani, A.; Colonna, J. P.; Vianello, E.; Bocquet, M.; Nowak, E.; Gasulla, M.; Cueto, O.; Grampeix, H.; Martin, F.; Kies, R.; Brianceau, P.; Gely, M.; Papon, A. M.; Lafond, D.; Barnes, J. P.; Licitra, C.; Ghibaudo, G.; Larcher, L.; Deleonibus, S.; De Salvo, B.
Low-Field Mobility and High-Field Drift Velocity in Graphene Nanoribbons and Graphene Bilayers
2010 Bresciani, Marco; Paussa, Alan; Palestri, Pierpaolo; Esseni, David; Selmi, Luca
Metal oxide RRAM switching mechanism based on conductive filament microscopic properties
2010 G., Bersuker; D. C., Gilmer; D., Veksler; J., Yum; H., Park; S., Lian; Vandelli, Luca; Padovani, Andrea; Larcher, Luca; K., Mckenna; A., Shluger; V., Iglesias; M., Porti; M., Nafría; W., Taylor; P. D., Kirsch; R., Jammy
Microscopic understanding and modeling of HfO2 RRAM device physics
2012 Larcher, Luca; Padovani, Andrea; Pirrotta, Onofrio; Vandelli, Luca; G., Bersuker
Mobility in high-K metal gate UTBB-FDSOI devices: From NEGF to TCAD perspectives
2013 D., Rideau; Y. M., Niquet; Nier, Oliver; A., Cros; J. P., Manceau; Palestri, Pierpaolo; Esseni, David; V. H., Nguyen; F., Triozon; J. C., Barbe; I., Duchemin; D., Garetto; L., Smith; L., Silvestri; F., Nallet; R., Clerc; O., Weber; F., Andrieu; E., Josse; C., Tavernier; H., Jaouen
Multiscale modeling of neuromorphic computing: From materials to device operations
2018 Larcher, L.; Padovani, A.; Di Lecce, V.
Nanodevices in flatland: Two-dimensional graphene-based transistors with high I on/I off ratio
2011 Fiori, G; Betti, A.; Bruzzone, S.; D'Amico, Pino; Iannaccone, G.
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
Characterization and modelling of low-frequency noise in PCM devices | 1-gen-2008 | P., Fantini; G., Betti Beneventi; A., Calderoni; Larcher, Luca; Pavan, Paolo; F., Pellizzer | |
CMOS and Interconnect Reliability - Flash Reliability/Hot Carrier Effects | 1-gen-2003 | Pavan, P.; Owens, A. | |
Coexistence of volatile and non-volatile resistive switching in 2D h-BN based electronic synapses | 1-gen-2018 | Shi, Y.; Pan, C.; Chen, V.; Raghavan, N.; Pey, K. L.; Puglisi, F. M.; Pop, E.; Wong, H. -S. P.; Lanza, M. | |
Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices | 1-gen-2011 | Vandelli, Luca; Padovani, Andrea; Larcher, Luca; G., Broglia; G., Ori; Montorsi, Monia; G., Bersuker; Pavan, Paolo | |
Connecting the physical and electrical properties of Hafnia-based RRAM | 1-gen-2013 | B., Butcher; G., Bersuker; D., Gilmer; P., Kirsch; Larcher, Luca; Padovani, Andrea; Vandelli, Luca; R., Geer; P. D., Kirsch | |
Deconvoluting charge trapping and nucleation interplay in FeFETs: Kinetics and Reliability | 1-gen-2019 | Pesic, M.; Padovani, A.; Slcsazeck, S.; Mikolajick, T.; Larcher, L. | |
Demonstration of Improved Transient Response of Inverters with Steep Slope Strained Si NW TFETs by Reduction of TAT with Pulsed I-V and NW Scaling | 1-gen-2013 | L., Knoll; Q. T., Zhao; A., Nichau; S., Richter; G. V., Luong; S., Trellenkamp; A., Schäfer; Selmi, Luca; K. K., Bourdelle; S., Mantl | |
Design and Optimization of β-Ga 2 O 3 on (h-BN layered) Sapphire for High Efficiency Power Transistors: A Device-Circuit-Package Perspective | 1-gen-2018 | Mahajan, B. K.; Chen, Y. -P.; Ahn, W.; Zagni, N.; Alam, M. A. | |
Electroluminescence analysis of time-dependent reverse-bias degradation of HEMTs: A complete model | 1-gen-2011 | M., Meneghini; A., Stocco; M., Bertin; N., Ronchi; Chini, Alessandro; D., Marcon; G., Meneghesso; E., Zanoni | |
An Experimental Study of Low Field Electron Mobility in Double-Gate, Ultra-Thin SOI MOSFETs | 1-gen-2001 | Esseni, David; M., Mastrapasqua; C., Fiegna; G. K., Celler; Selmi, Luca; Sangiorgi, Enrico | |
Flexible CMOS electronics based on p-type Ge2Sb2Te5 and n-type InGaZnO4 semiconductors | 1-gen-2018 | Daus, A.; Han, S.; Knobelspies, S.; Cantarella, G.; Vogt, C.; Munzenrieder, N.; Troster, G. | |
Integration of solution-processed (7,5) SWCNTs with sputtered and spray-coated metal oxides for flexible complementary inverters | 1-gen-2015 | Petti, L; Bottacchi, F; Münzenrieder, N; Faber, H; Cantarella, G; Vogt, C; Büthe, L; Namal, I; Späth, F; Hertel, T; Anthopoulos, T; Tröster, G | |
Investigating the Statistical-Physical Nature of MgO Dielectric Breakdown in STT-MRAM at Different Operating Conditions | 1-gen-2019 | Lim, J. H.; Raghavan, N.; Padovani, A.; Kwon, J. H.; Yamane, K.; Yang, H.; Naik, V. B.; Larcher, L.; Lee, K. H.; Pey, K. L. | |
Investigation of the role of H-related defects in Al2O3 blocking layer on charge-trap memory retention by atomistic simulations and device physical modelling | 1-gen-2010 | Molas, G.; Masoero, L.; Blaise, P.; Padovani, A.; Colonna, J. P.; Vianello, E.; Bocquet, M.; Nowak, E.; Gasulla, M.; Cueto, O.; Grampeix, H.; Martin, F.; Kies, R.; Brianceau, P.; Gely, M.; Papon, A. M.; Lafond, D.; Barnes, J. P.; Licitra, C.; Ghibaudo, G.; Larcher, L.; Deleonibus, S.; De Salvo, B. | |
Low-Field Mobility and High-Field Drift Velocity in Graphene Nanoribbons and Graphene Bilayers | 1-gen-2010 | Bresciani, Marco; Paussa, Alan; Palestri, Pierpaolo; Esseni, David; Selmi, Luca | |
Metal oxide RRAM switching mechanism based on conductive filament microscopic properties | 1-gen-2010 | G., Bersuker; D. C., Gilmer; D., Veksler; J., Yum; H., Park; S., Lian; Vandelli, Luca; Padovani, Andrea; Larcher, Luca; K., Mckenna; A., Shluger; V., Iglesias; M., Porti; M., Nafría; W., Taylor; P. D., Kirsch; R., Jammy | |
Microscopic understanding and modeling of HfO2 RRAM device physics | 1-gen-2012 | Larcher, Luca; Padovani, Andrea; Pirrotta, Onofrio; Vandelli, Luca; G., Bersuker | |
Mobility in high-K metal gate UTBB-FDSOI devices: From NEGF to TCAD perspectives | 1-gen-2013 | D., Rideau; Y. M., Niquet; Nier, Oliver; A., Cros; J. P., Manceau; Palestri, Pierpaolo; Esseni, David; V. H., Nguyen; F., Triozon; J. C., Barbe; I., Duchemin; D., Garetto; L., Smith; L., Silvestri; F., Nallet; R., Clerc; O., Weber; F., Andrieu; E., Josse; C., Tavernier; H., Jaouen | |
Multiscale modeling of neuromorphic computing: From materials to device operations | 1-gen-2018 | Larcher, L.; Padovani, A.; Di Lecce, V. | |
Nanodevices in flatland: Two-dimensional graphene-based transistors with high I on/I off ratio | 1-gen-2011 | Fiori, G; Betti, A.; Bruzzone, S.; D'Amico, Pino; Iannaccone, G. |
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