Coupled Monte Carlo Simulation of Si and SiO2 Transport in MOS Capacitors
2000 Palestri, Pierpaolo; Selmi, Luca; M., Pavesi; F., Widdershoven; Sangiorgi, Enrico
Monte Carlo Simulation of Decananometric Double-Gate SOI devices: Multi-Subband vs. 3D-Electron Gas with Quantum Corrections
2006 Riolino, I; Braccioli, M; Lucci, L; Esseni, David; Fiegna, C; Palestri, Pierpaolo; Selmi, Luca
Design of UWB LNA in 45nm CMOS Technology: Planar Bulk vs. FinFET
2008 D., Ponton; Palestri, Pierpaolo; Esseni, David; Selmi, Luca; M., Tiebout; B., Parvais; G., Knoblinger
An Optimization Model to Reduce Energy Consumption in Software-Defined Data Centers
2018 Canali, Claudia; Lancellotti, Riccardo; Shojafar, Mohammad
2D h-BN based RRAM devices
2016 Puglisi, Francesco Maria; Larcher, Luca; Pan, C.; Xiao, N.; Shi, Y.; Hui, F.; Lanza, M.
Experimental Signature and Physical Mechanisms of Substrate Enhanced Gate Current in MOS Devices
1998 Esseni, David; Selmi, Luca
A Test Pattern to Investigate the Effect of Capping Layers on the Hot Carrier Induced Photon Spectra of MOSFET’s
1994 Lanzoni, M; Selmi, Luca; Bez, R; Manfredi, M.
A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents
2000 Palestri, Pierpaolo; Selmi, Luca; G. A. M., Hurkx; J. W., Slotboom
Effects of the interaction of neighboring structures on the Latch-up behavior of C-MOS ICs
1990 Menozzi, R; Selmi, Luca; Sangiorgi, Enrico; Ricco, B.
Can Photon Emission / Absorption Processes Explain the Substrate Current of Tunneling MOS Capacitors?
2001 Dalla Serra, A.; Palestri, Pierpaolo; Selmi, Luca
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations
2000 Dalla Serra, Alberto; Abramo, Antonio; Palestri, Pierpaolo; Selmi, Luca
Simulation of nano-biosensors based on conventional TCAD
2013 Palestri, Pierpaolo; Sette, R; Pittino, Federico; Saccon, F; Esseni, David; Selmi, Luca
Validity of the effective mass approximation in silicon and germanium inversion layers
2006 Van Der Steen, J. L.; Esseni, David; Palestri, Pierpaolo; Selmi, Luca
Study of defects in Al2O3 blocking layers of TANOS memories by atomistic simulation, electrical characterization and physico-chemical material analyses
2011 Masoero, L.; Molas, G.; Blaise, P.; Colonna, J. P.; Vianello, Elisa; Selmi, Luca; Papon, A. M.; Lafond, D.; Martin, F.; Gely, M.; Licitra, C.; Barnes, J. P.; Ghibaudo, G.; De Salvo, B.
LC-Oscillator featuring independent Gate biasing implemented in 32 nm CMOS technology
2010 Ponton, Davide; Palestri, Pierpaolo; Knoblinger, G; Fulde, M; Selmi, Luca
Understanding the mobility reduction in MOSFETs featuring high-κ dielectrics
2010 Toniutti, Paolo; De Michielis, Marco; Palestri, Pierpaolo; Driussi, Francesco; Esseni, David; Selmi, Luca
Experimental and Simulation Study of the Biaxial Strain and Temperature dependence of the Electron Mobility Enhancement in Si MOSFETs
2007 Driussi, Francesco; Esseni, David; Selmi, Luca; P. E., Hellstrom; G., Malm; J., Hallstedt; M., Ostling; T. J., Grasby; D. R., Leadley; X., Mescot
Extraction of the Series Resistances and Effective Channel Length of GaAs MESFETs by means of Electrical Methods
1991 Menozzi, R; Selmi, Luca; Gandolfi, A; Ricco, B.
Experimental Evidence and Statistical Modeling of Cooperating Defects in Stressed Oxides
2004 Driussi, Francesco; Esseni, David; Selmi, Luca; Van Duuren, M. J.; Widdershoven, F.
Multi-Subband-Monte-Carlo investigation of the mean free path and of the kT layer in degenerated quasi ballistic nanoMOSFETs
2006 Palestri, Pierpaolo; Clerc, R; Esseni, David; Lucci, Luca; Selmi, Luca
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Coupled Monte Carlo Simulation of Si and SiO2 Transport in MOS Capacitors | 1-gen-2000 | Palestri, Pierpaolo; Selmi, Luca; M., Pavesi; F., Widdershoven; Sangiorgi, Enrico | |
| Monte Carlo Simulation of Decananometric Double-Gate SOI devices: Multi-Subband vs. 3D-Electron Gas with Quantum Corrections | 1-gen-2006 | Riolino, I; Braccioli, M; Lucci, L; Esseni, David; Fiegna, C; Palestri, Pierpaolo; Selmi, Luca | |
| Design of UWB LNA in 45nm CMOS Technology: Planar Bulk vs. FinFET | 1-gen-2008 | D., Ponton; Palestri, Pierpaolo; Esseni, David; Selmi, Luca; M., Tiebout; B., Parvais; G., Knoblinger | |
| An Optimization Model to Reduce Energy Consumption in Software-Defined Data Centers | 1-gen-2018 | Canali, Claudia; Lancellotti, Riccardo; Shojafar, Mohammad | |
| 2D h-BN based RRAM devices | 1-gen-2016 | Puglisi, Francesco Maria; Larcher, Luca; Pan, C.; Xiao, N.; Shi, Y.; Hui, F.; Lanza, M. | |
| Experimental Signature and Physical Mechanisms of Substrate Enhanced Gate Current in MOS Devices | 1-gen-1998 | Esseni, David; Selmi, Luca | |
| A Test Pattern to Investigate the Effect of Capping Layers on the Hot Carrier Induced Photon Spectra of MOSFET’s | 1-gen-1994 | Lanzoni, M; Selmi, Luca; Bez, R; Manfredi, M. | |
| A Monte Carlo Technique to Investigate Signal Delays of Advanced Si BJT's up to High Currents | 1-gen-2000 | Palestri, Pierpaolo; Selmi, Luca; G. A. M., Hurkx; J. W., Slotboom | |
| Effects of the interaction of neighboring structures on the Latch-up behavior of C-MOS ICs | 1-gen-1990 | Menozzi, R; Selmi, Luca; Sangiorgi, Enrico; Ricco, B. | |
| Can Photon Emission / Absorption Processes Explain the Substrate Current of Tunneling MOS Capacitors? | 1-gen-2001 | Dalla Serra, A.; Palestri, Pierpaolo; Selmi, Luca | |
| A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations | 1-gen-2000 | Dalla Serra, Alberto; Abramo, Antonio; Palestri, Pierpaolo; Selmi, Luca | |
| Simulation of nano-biosensors based on conventional TCAD | 1-gen-2013 | Palestri, Pierpaolo; Sette, R; Pittino, Federico; Saccon, F; Esseni, David; Selmi, Luca | |
| Validity of the effective mass approximation in silicon and germanium inversion layers | 1-gen-2006 | Van Der Steen, J. L.; Esseni, David; Palestri, Pierpaolo; Selmi, Luca | |
| Study of defects in Al2O3 blocking layers of TANOS memories by atomistic simulation, electrical characterization and physico-chemical material analyses | 1-gen-2011 | Masoero, L.; Molas, G.; Blaise, P.; Colonna, J. P.; Vianello, Elisa; Selmi, Luca; Papon, A. M.; Lafond, D.; Martin, F.; Gely, M.; Licitra, C.; Barnes, J. P.; Ghibaudo, G.; De Salvo, B. | |
| LC-Oscillator featuring independent Gate biasing implemented in 32 nm CMOS technology | 1-gen-2010 | Ponton, Davide; Palestri, Pierpaolo; Knoblinger, G; Fulde, M; Selmi, Luca | |
| Understanding the mobility reduction in MOSFETs featuring high-κ dielectrics | 1-gen-2010 | Toniutti, Paolo; De Michielis, Marco; Palestri, Pierpaolo; Driussi, Francesco; Esseni, David; Selmi, Luca | |
| Experimental and Simulation Study of the Biaxial Strain and Temperature dependence of the Electron Mobility Enhancement in Si MOSFETs | 1-gen-2007 | Driussi, Francesco; Esseni, David; Selmi, Luca; P. E., Hellstrom; G., Malm; J., Hallstedt; M., Ostling; T. J., Grasby; D. R., Leadley; X., Mescot | |
| Extraction of the Series Resistances and Effective Channel Length of GaAs MESFETs by means of Electrical Methods | 1-gen-1991 | Menozzi, R; Selmi, Luca; Gandolfi, A; Ricco, B. | |
| Experimental Evidence and Statistical Modeling of Cooperating Defects in Stressed Oxides | 1-gen-2004 | Driussi, Francesco; Esseni, David; Selmi, Luca; Van Duuren, M. J.; Widdershoven, F. | |
| Multi-Subband-Monte-Carlo investigation of the mean free path and of the kT layer in degenerated quasi ballistic nanoMOSFETs | 1-gen-2006 | Palestri, Pierpaolo; Clerc, R; Esseni, David; Lucci, Luca; Selmi, Luca |
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