In this work we investigate the correlation between hydrogen content and leakage current through the Al2O3 layers of TANOS memories. We put in evidence that retention of TANOS memories is improved with the decrease of H concentration in the Al2O3 layer. Using atomistic simulations consolidated by detailed Al2O3 physico-chemical analyses, we find that interstitial H produces a midgap trap likely to participate to trap assisted conduction.

Study of defects in Al2O3 blocking layers of TANOS memories by atomistic simulation, electrical characterization and physico-chemical material analyses / Masoero, L.; Molas, G.; Blaise, P.; Colonna, J. P.; Vianello, Elisa; Selmi, Luca; Papon, A. M.; Lafond, D.; Martin, F.; Gely, M.; Licitra, C.; Barnes, J. P.; Ghibaudo, G.; DE SALVO, B.. - (2011), pp. 978-979. (Intervento presentato al convegno 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 tenutosi a Hsinchu, twn nel 2011) [10.1109/VTSA.2011.5872268].

Study of defects in Al2O3 blocking layers of TANOS memories by atomistic simulation, electrical characterization and physico-chemical material analyses

SELMI, Luca;
2011

Abstract

In this work we investigate the correlation between hydrogen content and leakage current through the Al2O3 layers of TANOS memories. We put in evidence that retention of TANOS memories is improved with the decrease of H concentration in the Al2O3 layer. Using atomistic simulations consolidated by detailed Al2O3 physico-chemical analyses, we find that interstitial H produces a midgap trap likely to participate to trap assisted conduction.
2011
2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
Hsinchu, twn
2011
978
979
Masoero, L.; Molas, G.; Blaise, P.; Colonna, J. P.; Vianello, Elisa; Selmi, Luca; Papon, A. M.; Lafond, D.; Martin, F.; Gely, M.; Licitra, C.; Barnes, J. P.; Ghibaudo, G.; DE SALVO, B.
Study of defects in Al2O3 blocking layers of TANOS memories by atomistic simulation, electrical characterization and physico-chemical material analyses / Masoero, L.; Molas, G.; Blaise, P.; Colonna, J. P.; Vianello, Elisa; Selmi, Luca; Papon, A. M.; Lafond, D.; Martin, F.; Gely, M.; Licitra, C.; Barnes, J. P.; Ghibaudo, G.; DE SALVO, B.. - (2011), pp. 978-979. (Intervento presentato al convegno 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 tenutosi a Hsinchu, twn nel 2011) [10.1109/VTSA.2011.5872268].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1163124
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