We present a Monte Carte (MC) model comprising SiO2 and Si transport, suitable to simulate carrier multiplication in MOS structures. The code extends full-band density of states (DoS) and scattering rate calculations in silicon up to high energy. Simulations of 5-15 nn oxides for Non Volatile Memory applications demonstrate the role of oxide transport on the distribution of the holes generated by impact ionization, which are often regarded as the origin of oxide degradation, SILC and breakdown.
Coupled Monte Carlo Simulation of Si and SiO2 Transport in MOS Capacitors / Palestri, Pierpaolo; Selmi, Luca; M., Pavesi; F., Widdershoven; Sangiorgi, Enrico. - (2000), pp. 38-41. (Intervento presentato al convegno International Conference on Simulation of Semiconductor Processes and Devices tenutosi a SEATTLE, WA nel SEP 06-08, 2000) [10.1109/SISPAD.2000.871201].
Coupled Monte Carlo Simulation of Si and SiO2 Transport in MOS Capacitors
PALESTRI, Pierpaolo;SELMI, Luca;
2000
Abstract
We present a Monte Carte (MC) model comprising SiO2 and Si transport, suitable to simulate carrier multiplication in MOS structures. The code extends full-band density of states (DoS) and scattering rate calculations in silicon up to high energy. Simulations of 5-15 nn oxides for Non Volatile Memory applications demonstrate the role of oxide transport on the distribution of the holes generated by impact ionization, which are often regarded as the origin of oxide degradation, SILC and breakdown.
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