The authors present a numerical study on electrical methods to measure the source and drain resistances and the effective channel length of state-of-the-art gallium arsenide MESFETs. In particular, the effects of scaling on the physical meaning and gate voltage dependence of the extracted values are investigated. Fringing effects at the gate edges are found to be responsible for a substantial bias dependence of the series resistances, and hence for possible inaccuracies of extraction procedures that overlook such phenomena. A novel extraction technique is also proposed to overcome in part the limitations of conventional approaches.

Extraction of the Series Resistances and Effective Channel Length of GaAs MESFETs by means of Electrical Methods / Menozzi, R; Selmi, Luca; Gandolfi, A; Ricco, B.. - STAMPA. - (1991), pp. 341-344. (Intervento presentato al convegno International Electron Devices Meeting (IEDM) 1991 tenutosi a Washington, DC, USA nel 8-11 Dicembre 1991) [10.1109/IEDM.1991.235383].

Extraction of the Series Resistances and Effective Channel Length of GaAs MESFETs by means of Electrical Methods

SELMI, Luca;
1991

Abstract

The authors present a numerical study on electrical methods to measure the source and drain resistances and the effective channel length of state-of-the-art gallium arsenide MESFETs. In particular, the effects of scaling on the physical meaning and gate voltage dependence of the extracted values are investigated. Fringing effects at the gate edges are found to be responsible for a substantial bias dependence of the series resistances, and hence for possible inaccuracies of extraction procedures that overlook such phenomena. A novel extraction technique is also proposed to overcome in part the limitations of conventional approaches.
1991
International Electron Devices Meeting (IEDM) 1991
Washington, DC, USA
8-11 Dicembre 1991
341
344
Menozzi, R; Selmi, Luca; Gandolfi, A; Ricco, B.
Extraction of the Series Resistances and Effective Channel Length of GaAs MESFETs by means of Electrical Methods / Menozzi, R; Selmi, Luca; Gandolfi, A; Ricco, B.. - STAMPA. - (1991), pp. 341-344. (Intervento presentato al convegno International Electron Devices Meeting (IEDM) 1991 tenutosi a Washington, DC, USA nel 8-11 Dicembre 1991) [10.1109/IEDM.1991.235383].
File in questo prodotto:
File Dimensione Formato  
1991_12_IEDM_Menozzi_ExtractionSeriesResistance.pdf

Accesso riservato

Dimensione 317.42 kB
Formato Adobe PDF
317.42 kB Adobe PDF   Visualizza/Apri   Richiedi una copia
Pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1162864
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 2
  • ???jsp.display-item.citation.isi??? ND
social impact