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Hot-electron-induced photon energies in n-channel MOSFET's operating at 77 and 300 K 1-gen-1992 Lanzoni, Massimo; Manfredi, M.; Selmi, L.; Sangiorgi, Enrico; Capelletti, R.; Ricco, Bruno
Small Signal MMIC Amplifiers with Bridged T-coil Matching Networks 1-gen-1992 Selmi, Luca; ESTREICH D., B; Ricco', B.
Analysis of Uniform Degradation in n-MOSFETs 1-gen-1992 Selmi, Luca; Fiegna, C; Sangiorgi, Enrico; Bez, R; Ricco, B.
Numerical Analysis of the Gate Voltage Dependence of the Series Resistances and Effective Channel Length in sub-micron GaAs MESFETs 1-gen-1992 Selmi, Luca; Menozzi, R; Gandolfi, P; Ricco, B.
Photon Emission from sub-micron p-channel MOSFETs Biased at High Fields 1-gen-1992 Selmi, Luca; Lanzoni, M; Bigliardi, S; Sangiorgi, Enrico
A Study of Injection Conditions in the Substrate Hot Electron Induced Degradation of n-MOSFETs 1-gen-1993 Selmi, Luca; Fiegna, C; Bez, R; Sangiorgi, Enrico; Ricco, B.
Measurement of the Hot Hole Injection Probability from Si Into SiO2 in p-MOSFET’s 1-gen-1993 Selmi, Luca; Sangiorgi, Enrico; Bez, R; Ricco, B.
Experimental Application of a Novel Technique to Extract Gate Bias Dependent Source and Drain Parasitic Resistances of GaAs MESFETs 1-gen-1993 Menozzi, R; Cova, P; Selmi, Luca
Modelling temperature effects in the DC I-V characteristics of GaAs MESFETs 1-gen-1993 Selmi, Luca; Ricco, B.
Design of an X-band, Transformer Coupled Amplifier with improved Stability and Layout 1-gen-1993 Selmi, Luca; B., Ricco'
Photon emission from sub-micron p-channel mosfets biased at high fields 1-gen-1993 Selmi, L.; Lanzoni, M.; Bigliardi, S.; Sangiorgi, E.
Investigation of Hot Electron Luminescence in Silicon by means of Dual Gate MOS Structures 1-gen-1993 Selmi, Luca; WONG H., S; Sangiorgi, Enrico; Lanzoni, M; Manfredi, M.
Oxide Field Dependence of Electron Injection From Silicon into Silicon Dioxide 1-gen-1993 Selmi, Luca; Sangiorgi, Enrico; Fiegna, C.
Bias and Temperature Dependence of Gate and Substrate Currents in n-MOSFETs at Low Drain Voltage 1-gen-1994 Esseni, David; Selmi, Luca; R., Bez; Sangiorgi, Enrico; B., Ricco
Characterization of Transient Effects in the S-Parameters of GaAs MESFETs by means of Pulsed Measurements 1-gen-1994 Begin, M; GHANNOUCHI F., M; Beauregard, F; Selmi, Luca; Ricco, B; Borelli, V.
Instanteneous S parameters measurements of MESFETs under burst bias conditions 1-gen-1994 Begin, M.; Ghannouchi, F. M.; Selmi, L.; Ricco, B.
Comments on “Oxide-Field Dependence of Electron Injection from Silicon into Silicon Dioxide” 1-gen-1994 Fischetti, M. V.; Fiegna, C.; Sangiorgi, E.; Selmi, L.
Instanteneous S parameters measurements of MESFETs under burst bias conditions 1-gen-1994 Begin, F; GHANNOUCHI F., M; Selmi, Luca; Ricco, B.
AC Frequency Resolved Measurements for Direct Extraction of the Parasitic Resistance of Individual MOSFETs 1-gen-1994 Selmi, Luca; Alfieri, A; Ricco, B.
A Test Pattern to Investigate the Effect of Capping Layers on the Hot Carrier Induced Photon Spectra of MOSFET’s 1-gen-1994 Lanzoni, M; Selmi, Luca; Bez, R; Manfredi, M.
Mostrati risultati da 21 a 40 di 453
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