An innovative Six-Port Network Analyzer (SPNA) for characterizing GaAs MESFETs under pulsed bias and RF conditions is presented in this paper. This SPNA allows the measurements of instantaneous S parameters of microwave active devices. These S parameters may then be used to extract the electrical model elements (Cgs, Cgd, Gds, Gm, etc.) of the MESFET using standard procedures [1]. This system is particularly suitable for studying trapping and self-heating effects in GaAs devices.
Instanteneous S parameters measurements of MESFETs under burst bias conditions / Begin, M.; Ghannouchi, F. M.; Selmi, L.; Ricco, B.. - 2:(1994), pp. 858-861. (Intervento presentato al convegno Proceedings of the 1994 IEEE Instrumentation and Measurement Technology Conference. Part 2 (of 3) tenutosi a Hamamatsu, Jpn, nel 1994).
Instanteneous S parameters measurements of MESFETs under burst bias conditions
Selmi L.;
1994
Abstract
An innovative Six-Port Network Analyzer (SPNA) for characterizing GaAs MESFETs under pulsed bias and RF conditions is presented in this paper. This SPNA allows the measurements of instantaneous S parameters of microwave active devices. These S parameters may then be used to extract the electrical model elements (Cgs, Cgd, Gds, Gm, etc.) of the MESFET using standard procedures [1]. This system is particularly suitable for studying trapping and self-heating effects in GaAs devices.
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