This paper presents a simple model to account for the main temperature effects influencing the dc performance of GaAs MESFET's. The model is based on a consistent solution of heat flow and current equations, that accounts for nonuniform power dissipation within the device. The simulation results are satisfactorily compared with experimental data obtained with pulsed and dc measurements performed on conventional devices as well as on suitable test structures.
Modelling temperature effects in the DC I-V characteristics of GaAs MESFETs / Selmi, Luca; Ricco, B.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 40:2(1993), pp. 273-277. [10.1109/16.182500]
Modelling temperature effects in the DC I-V characteristics of GaAs MESFETs
SELMI, Luca;
1993
Abstract
This paper presents a simple model to account for the main temperature effects influencing the dc performance of GaAs MESFET's. The model is based on a consistent solution of heat flow and current equations, that accounts for nonuniform power dissipation within the device. The simulation results are satisfactorily compared with experimental data obtained with pulsed and dc measurements performed on conventional devices as well as on suitable test structures.Pubblicazioni consigliate
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris