An innovative Six-Port Network Analyzer (SPNA) for characterizing GaAs MESFETs under pulsed bias and RF conditions is presented in this paper. This SPNA allows the measurements of instantaneous S parameters of microwave active devices. These S parameters may then be used to extract the electrical model elements (Cgs, Cgd, Gds, Gm, etc.) of the MESFET using standard procedures [1]. This system is particularly suitable for studying trapping and self-heating effects in GaAs devices.
Instanteneous S parameters measurements of MESFETs under burst bias conditions / Begin, F; GHANNOUCHI F., M; Selmi, Luca; Ricco, B.. - 2:(1994), pp. 858-861. (Intervento presentato al convegno 1994 IEEE Instrumentation and Measurement Technology Conference, IMTC 1994 tenutosi a Hamamatsu, Japan nel 1994) [10.1109/IMTC.1994.351974].
Instanteneous S parameters measurements of MESFETs under burst bias conditions
SELMI, Luca;
1994
Abstract
An innovative Six-Port Network Analyzer (SPNA) for characterizing GaAs MESFETs under pulsed bias and RF conditions is presented in this paper. This SPNA allows the measurements of instantaneous S parameters of microwave active devices. These S parameters may then be used to extract the electrical model elements (Cgs, Cgd, Gds, Gm, etc.) of the MESFET using standard procedures [1]. This system is particularly suitable for studying trapping and self-heating effects in GaAs devices.
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