In this paper we report the first experimental data on hot carrier luminescence in silicon p-channel MOS transistors featuring sub-micron gate length. All the terminal currents of the devices (including the gate and substrate currents) were also measured, and their dependence on the applied bias is analyzed and compared to that of the emitted light intensity.
Photon emission from sub-micron p-channel mosfets biased at high fields / Selmi, L.; Lanzoni, M.; Bigliardi, S.; Sangiorgi, E.. - (1993), pp. 747-750. (Intervento presentato al convegno 22nd European Solid State Device Research Conference, ESSDERC 1992 tenutosi a bel nel 1992).
Photon emission from sub-micron p-channel mosfets biased at high fields
Selmi L.;Bigliardi S.;
1993
Abstract
In this paper we report the first experimental data on hot carrier luminescence in silicon p-channel MOS transistors featuring sub-micron gate length. All the terminal currents of the devices (including the gate and substrate currents) were also measured, and their dependence on the applied bias is analyzed and compared to that of the emitted light intensity.
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