In the study of electron injection from Si into S1O2 one would reach conclusions vastly different from those of the above paper when accounting for a realistic density-of-states in Si at high electron energy and employing a hetter approximation for the probability of transmission across the Si-SiO2 interface. © 1994, IEEE. All rights reserved.
Comments on “Oxide-Field Dependence of Electron Injection from Silicon into Silicon Dioxide” / Fischetti, M. V.; Fiegna, C.; Sangiorgi, E.; Selmi, L.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 41:9(1994), pp. 1680-1683. [10.1109/16.310127]
Comments on “Oxide-Field Dependence of Electron Injection from Silicon into Silicon Dioxide”
Selmi L.
1994
Abstract
In the study of electron injection from Si into S1O2 one would reach conclusions vastly different from those of the above paper when accounting for a realistic density-of-states in Si at high electron energy and employing a hetter approximation for the probability of transmission across the Si-SiO2 interface. © 1994, IEEE. All rights reserved.
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