Sfoglia per Autore
Reliability aspects of GaN microwave devices
2003 E., Zanoni; G., Meneghesso; Verzellesi, Giovanni; R., Pierobon; F., Rampazzo; Chini, Alessandro
Instabilities and degradation in GaN-based devices
2003 Meneghesso, G.; Verzellesi, Giovanni; Pierobon, R.; Rampazzo, F.; Chini, Alessandro; Zanoni, E.
Robust C-band MMIC Low Noise Amplifier using AlGaN/GaN HEMT Power Devices
2003 Xu, H.; Sanabria, C.; Chini, Alessandro; Keller, S.; Mishra, U. K.; York, R. A.
Unpassivated p-GaN/AlGaN/GaN HEMTs with 7.1 W/mm at 10 GHz
2003 Coffie, R.; Shen, L.; Parish, G.; Chini, Alessandro; Buttari, D.; Heikman, S.; Keller, S.; Mishra, U. K.
Study on the origin of dc-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs
2003 Verzellesi, Giovanni; Mazzanti, Andrea; Canali, Claudio; Meneghesso, G.; Chini, Alessandro; Zanoni, E.
2.1 A/mm current density AlGaN/GaN HEMT
2003 Chini, Alessandro; Coffie, R.; Meneghesso, G.; Zanoni, E.; Buttari, D.; Heikman, S.; Keller, S.; Mishra, U. K.
Temperature dependence of the current-voltage characteristics of AlGaN/GaN HEMT
2003 Shen, L.; Chini, Alessandro; Coffie, R.; Buttari, D.; Heikman, S.; Keller, S.; Mishra, U. K.
High performance AlGaN/GaN HEMTs with a field plated gate structure
2003 Chini, Alessandro; Buttari, D.; Coffie, R.; Shen, L.; Heikman, S.; Chakraborty, A.; Keller, S.; Mishra, U. K.
Origin of etch delay time in Cl2 dry etching of AlGaN/GaN structures
2003 Buttari, D.; Chini, Alessandro; Palacios, T.; Coffie, R.; Shen, L.; Xing, H.; Heikman, S.; McCarthy, L.; Chakraborty, A.; Keller, S.; Mishra, U. K.
High-linearity class B power amplifiers in GaN HEMT technology
2003 Xie, S.; Paidi, V.; Coffie, R.; Keller, S.; Heikman, S.; Moran, B.; Chini, Alessandro; Denbaars, S. P.; Mishra, U. K.; Long, S.; Rodwell, M. J. W.
Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs
2003 Meneghesso, G.; Chini, Alessandro; Maretto, M.; Zanoni, E.
High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology
2003 Paidi, V.; Xie, S.; Coffie, R.; Moran, B.; Heikman, S.; Keller, S.; Chini, Alessandro; Denbaars, S. P.; Mishra, U. K.; Long, S.; Rodwell, M. J. W.
Trap-related effects, passivation and hot-carrier aging in GaN-based MESFETs and HEMTs
2004 E., Zanoni; G., Meneghesso; R., Pierobon; F., Rampazzo; Chini, Alessandro; Verzellesi, Giovanni
Selective dry etching of GaN over AlGaN in BCL3/SF6 mixtures
2004 Buttari, D; Chini, Alessandro; Chakraborty, A.; Mccarthy, L.; Xing, H.; Palacios, T.; Shen, L.; Keller, S.; Mishra, U. K.
High Linearity GaN HEMT Power Amplifier with Pre-Linearization Gate Diode
2004 S., Xie; V., Paidi; S., Heikman; Chini, Alessandro; U., Mishra; S., Long; M. J. W., Rodwell
Power and linearity characteristics of GaN MISFETs on sapphire substrate
2004 Chini, Alessandro; Wittich, J.; Heikman, S.; Keller, S.; Denbaars, S. P.; Mishra, U. K.
Power and Linearity Characteristics of Field-Plated Recessed-Gate AlGaN–GaN HEMTs
2004 Chini, Alessandro; Buttari, D.; Coffie, R.; Shen, L.; Heikman, S.; Chakraborty, A.; Keller, S.; Mishra, U. K.
12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate
2004 Chini, Alessandro; Buttari, D.; Coffie, R.; Heikman, S.; Keller, S.; Mishra, U. K.
A new field-plated GaN HEMT structure with improved power and noise performance
2004 Xu, Hongtao; Sanabria, Christopher; Chini, Alessandro; Wei, Yun; Heikman, Sten; Keller, Stacia; Mishra, Umesh K.; York, Robert A.
High linearity GaN HEMT power amplifier with pre-linearization gate diode
2004 Xie, S.; Paidi, V.; Heikman, S.; Shen, L.; Chini, Alessandro; Mishra, U. K.; Rodwell, M. J. W.; Long, S. I.
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
Reliability aspects of GaN microwave devices | 1-gen-2003 | E., Zanoni; G., Meneghesso; Verzellesi, Giovanni; R., Pierobon; F., Rampazzo; Chini, Alessandro | |
Instabilities and degradation in GaN-based devices | 1-gen-2003 | Meneghesso, G.; Verzellesi, Giovanni; Pierobon, R.; Rampazzo, F.; Chini, Alessandro; Zanoni, E. | |
Robust C-band MMIC Low Noise Amplifier using AlGaN/GaN HEMT Power Devices | 1-gen-2003 | Xu, H.; Sanabria, C.; Chini, Alessandro; Keller, S.; Mishra, U. K.; York, R. A. | |
Unpassivated p-GaN/AlGaN/GaN HEMTs with 7.1 W/mm at 10 GHz | 1-gen-2003 | Coffie, R.; Shen, L.; Parish, G.; Chini, Alessandro; Buttari, D.; Heikman, S.; Keller, S.; Mishra, U. K. | |
Study on the origin of dc-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs | 1-gen-2003 | Verzellesi, Giovanni; Mazzanti, Andrea; Canali, Claudio; Meneghesso, G.; Chini, Alessandro; Zanoni, E. | |
2.1 A/mm current density AlGaN/GaN HEMT | 1-gen-2003 | Chini, Alessandro; Coffie, R.; Meneghesso, G.; Zanoni, E.; Buttari, D.; Heikman, S.; Keller, S.; Mishra, U. K. | |
Temperature dependence of the current-voltage characteristics of AlGaN/GaN HEMT | 1-gen-2003 | Shen, L.; Chini, Alessandro; Coffie, R.; Buttari, D.; Heikman, S.; Keller, S.; Mishra, U. K. | |
High performance AlGaN/GaN HEMTs with a field plated gate structure | 1-gen-2003 | Chini, Alessandro; Buttari, D.; Coffie, R.; Shen, L.; Heikman, S.; Chakraborty, A.; Keller, S.; Mishra, U. K. | |
Origin of etch delay time in Cl2 dry etching of AlGaN/GaN structures | 1-gen-2003 | Buttari, D.; Chini, Alessandro; Palacios, T.; Coffie, R.; Shen, L.; Xing, H.; Heikman, S.; McCarthy, L.; Chakraborty, A.; Keller, S.; Mishra, U. K. | |
High-linearity class B power amplifiers in GaN HEMT technology | 1-gen-2003 | Xie, S.; Paidi, V.; Coffie, R.; Keller, S.; Heikman, S.; Moran, B.; Chini, Alessandro; Denbaars, S. P.; Mishra, U. K.; Long, S.; Rodwell, M. J. W. | |
Pulsed measurements and circuit modeling of weak and strong avalanche effects in GaAs MESFETs and HEMTs | 1-gen-2003 | Meneghesso, G.; Chini, Alessandro; Maretto, M.; Zanoni, E. | |
High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology | 1-gen-2003 | Paidi, V.; Xie, S.; Coffie, R.; Moran, B.; Heikman, S.; Keller, S.; Chini, Alessandro; Denbaars, S. P.; Mishra, U. K.; Long, S.; Rodwell, M. J. W. | |
Trap-related effects, passivation and hot-carrier aging in GaN-based MESFETs and HEMTs | 1-gen-2004 | E., Zanoni; G., Meneghesso; R., Pierobon; F., Rampazzo; Chini, Alessandro; Verzellesi, Giovanni | |
Selective dry etching of GaN over AlGaN in BCL3/SF6 mixtures | 1-gen-2004 | Buttari, D; Chini, Alessandro; Chakraborty, A.; Mccarthy, L.; Xing, H.; Palacios, T.; Shen, L.; Keller, S.; Mishra, U. K. | |
High Linearity GaN HEMT Power Amplifier with Pre-Linearization Gate Diode | 1-gen-2004 | S., Xie; V., Paidi; S., Heikman; Chini, Alessandro; U., Mishra; S., Long; M. J. W., Rodwell | |
Power and linearity characteristics of GaN MISFETs on sapphire substrate | 1-gen-2004 | Chini, Alessandro; Wittich, J.; Heikman, S.; Keller, S.; Denbaars, S. P.; Mishra, U. K. | |
Power and Linearity Characteristics of Field-Plated Recessed-Gate AlGaN–GaN HEMTs | 1-gen-2004 | Chini, Alessandro; Buttari, D.; Coffie, R.; Shen, L.; Heikman, S.; Chakraborty, A.; Keller, S.; Mishra, U. K. | |
12 W/mm power density AlGaN/GaN HEMTs on sapphire substrate | 1-gen-2004 | Chini, Alessandro; Buttari, D.; Coffie, R.; Heikman, S.; Keller, S.; Mishra, U. K. | |
A new field-plated GaN HEMT structure with improved power and noise performance | 1-gen-2004 | Xu, Hongtao; Sanabria, Christopher; Chini, Alessandro; Wei, Yun; Heikman, Sten; Keller, Stacia; Mishra, Umesh K.; York, Robert A. | |
High linearity GaN HEMT power amplifier with pre-linearization gate diode | 1-gen-2004 | Xie, S.; Paidi, V.; Heikman, S.; Shen, L.; Chini, Alessandro; Mishra, U. K.; Rodwell, M. J. W.; Long, S. I. |
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