A 36-dBm, high-linearity, single-ended Class B MMIC power amplifier is reported in GaN HEMT technology. The circuit demonstrates high linearity, greater than 35 dBc of third-order intermodulation (IM3) suppression and high power added efficiency (PAE) of 34%. We demonstrate experimentally that Class B power amplifiers can achieve IM3 suppression comparable to Class A, while providing approximately 10% improved power added efficiency.
High-linearity class B power amplifiers in GaN HEMT technology / Xie, S.; Paidi, V.; Coffie, R.; Keller, S.; Heikman, S.; Moran, B.; Chini, Alessandro; Denbaars, S. P.; Mishra, U. K.; Long, S.; Rodwell, M. J. W.. - In: IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS. - ISSN 1531-1309. - STAMPA. - 13:7(2003), pp. 284-286. [10.1109/LMWC.2003.811682]
High-linearity class B power amplifiers in GaN HEMT technology
CHINI, Alessandro;
2003
Abstract
A 36-dBm, high-linearity, single-ended Class B MMIC power amplifier is reported in GaN HEMT technology. The circuit demonstrates high linearity, greater than 35 dBc of third-order intermodulation (IM3) suppression and high power added efficiency (PAE) of 34%. We demonstrate experimentally that Class B power amplifiers can achieve IM3 suppression comparable to Class A, while providing approximately 10% improved power added efficiency.
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