Record performance at 4GHz has been obtained by using field plated AIGaN/GaN HEMTs. For devices on sapphire substrate, high power density (12W/mm) as well as high efficiency (58%) have been measured. Devices on Sic substrate yielded power density up to I8.8W/mm and efficiency up to 74% (with 6Whm). Excellent linearity performance was also achieved: while maintaining a carrier to third-order intermodulation ratio of 30dBc device yielded 2.4W/mm with 53% PAE.
High performance AlGaN/GaN HEMTs with a field plated gate structure / Chini, A., Buttari, D., Coffie, R., Shen, L., Heikman, S., Chakraborty, A., Keller, S., Mishra, U.K.. - (2003), pp. 434-435. (International Semiconductor Device Research Symposium, ISDRS 2003 Holiday Inn Georgetown, (USA) 10-12 Dec. 2003) [10.1109/ISDRS.2003.1272169].
High performance AlGaN/GaN HEMTs with a field plated gate structure
CHINI, Alessandro;
2003
Abstract
Record performance at 4GHz has been obtained by using field plated AIGaN/GaN HEMTs. For devices on sapphire substrate, high power density (12W/mm) as well as high efficiency (58%) have been measured. Devices on Sic substrate yielded power density up to I8.8W/mm and efficiency up to 74% (with 6Whm). Excellent linearity performance was also achieved: while maintaining a carrier to third-order intermodulation ratio of 30dBc device yielded 2.4W/mm with 53% PAE.
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