Field-plated structures can dramatically improve power capacity of GaN HEMT devices. In this paper, two different field-plated GaN HEMT structures will be demonstrated and compared to each other. The results show that a new GaN HEMT structure improves both power and noise performance without additional processing or costs.
A new field-plated GaN HEMT structure with improved power and noise performance / Xu, Hongtao; Sanabria, Christopher; Chini, Alessandro; Wei, Yun; Heikman, Sten; Keller, Stacia; Mishra, Umesh K.; York, Robert A.. - In: INTERNATIONAL JOURNAL OF HIGH SPEED ELECTRONICS. - ISSN 0129-1564. - 14:3(2004), pp. 810-815. [10.1142/S0129156404002879]
A new field-plated GaN HEMT structure with improved power and noise performance
CHINI, Alessandro;
2004
Abstract
Field-plated structures can dramatically improve power capacity of GaN HEMT devices. In this paper, two different field-plated GaN HEMT structures will be demonstrated and compared to each other. The results show that a new GaN HEMT structure improves both power and noise performance without additional processing or costs.
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