ABRAMO, ANTONIO
 Distribuzione geografica
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Continente #
NA - Nord America 1.567
EU - Europa 1.055
AS - Asia 253
OC - Oceania 1
Totale 2.876
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Nazione #
US - Stati Uniti d'America 1.567
DE - Germania 365
GB - Regno Unito 236
SE - Svezia 217
CN - Cina 103
RU - Federazione Russa 77
SG - Singapore 68
HK - Hong Kong 54
UA - Ucraina 53
IT - Italia 32
TR - Turchia 28
LT - Lituania 21
BG - Bulgaria 20
IE - Irlanda 16
FI - Finlandia 11
FR - Francia 3
BE - Belgio 2
AT - Austria 1
AU - Australia 1
HU - Ungheria 1
Totale 2.876
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Città #
Santa Clara 236
Fairfield 206
Southend 203
Chandler 137
Ashburn 135
Nyköping 115
Dearborn 104
Woodbridge 102
Jacksonville 88
Houston 79
Seattle 76
Cambridge 64
Wilmington 55
Hong Kong 54
Singapore 54
Eugene 36
Ann Arbor 30
Izmir 28
Beijing 25
San Diego 23
Princeton 21
Sofia 20
Dublin 16
Bremen 12
Helsinki 11
Grafing 7
Nanjing 6
Moscow 5
San Michele All'adige 5
London 4
New York 4
Dallas 3
Boardman 2
Brussels 2
Guangzhou 2
Hangzhou 2
Hefei 2
Hounslow 2
Kilburn 2
Prescot 2
Tolmezzo 2
Augusta 1
Baotou 1
Budapest 1
Chengdu 1
Chicago 1
Edinburgh 1
Fuzhou 1
Grenoble 1
Hendon 1
Islington 1
Jinan 1
Kunming 1
Los Angeles 1
Melbourne 1
Modena 1
Nantes 1
Ningbo 1
Norwalk 1
Paris 1
Shanghai 1
Shaoxing 1
Shenyang 1
Washington 1
Wuhan 1
Xiamen 1
Yinchuan 1
Zhaoqing 1
Totale 2.009
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Nome #
Impact Ionization and Photon Emission in MOS Capacitors and FETs 191
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 185
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors 179
Physically Based modeling of Low Field Electron Mobility in Ultrathin Single- and Double-Gate SOI n-MOSFETs 176
Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool 173
A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures 172
Analytical and numerical study of the impact of HALOS on short channel and hot carrier effects in scaled MOSFETs 172
Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs 171
Well-tempered MOSFETs: 1D versus 2D quantum analysis 169
Device simulation for decananometer MOSFETs 161
Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs 159
Study of low field electron transport in ultra-thin single and double gate SOI MOSFETs 147
Advanced Physically Based Device Modeling for Gate Current and Hot Carrier Phenomena in Scaled MOSFETs 121
Quantitative Assesment of mobility degradation by Remote Coulomb Scattering in Ultra-thin oxide MOSFETs: measurement and simulations 118
On the Optimization of HALOs for 0.1 micron MOSFETs and Below 117
Tunnelling Injection in Thin Oxide MOS Capacitors 115
Short channel and hot carrier performance of ULSI MOSFETs with halo structures 112
Two-dimensional quantum mechanical aspects in the charge distribution of ULSI silicon MOSFETs 110
Quantitative assessment of mobility degradation by remote coulomb scattering in ultra-thin oxide MOSFETs: Measurements and simulations 66
Erratum: A comparative analysis of substrate current generation mechanisms in tunneling MOS capacitors (IEEE Electron Devices (2002) 49 (1427-1435)) 61
Investigation on convergence and stability of self-consistent Monte Carlo device simulations 23
Totale 2.898
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Categoria #
all - tutte 11.777
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 11.777
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020463 0 0 0 0 0 110 110 66 52 13 68 44
2020/2021412 60 13 60 28 51 21 29 63 7 60 8 12
2021/2022355 13 47 18 19 5 44 22 6 43 23 90 25
2022/2023401 77 75 24 36 50 38 18 17 47 6 8 5
2023/2024200 7 8 4 15 52 22 17 19 0 2 44 10
2024/2025364 23 6 21 63 157 94 0 0 0 0 0 0
Totale 2.898