ABRAMO, ANTONIO
 Distribuzione geografica
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Continente #
NA - Nord America 2.581
EU - Europa 1.585
AS - Asia 1.495
SA - Sud America 140
Continente sconosciuto - Info sul continente non disponibili 24
AF - Africa 23
OC - Oceania 1
Totale 5.849
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Nazione #
US - Stati Uniti d'America 2.532
CN - Cina 545
DE - Germania 373
SG - Singapore 373
GB - Regno Unito 287
PL - Polonia 267
SE - Svezia 252
HK - Hong Kong 205
VN - Vietnam 148
RU - Federazione Russa 117
BR - Brasile 108
KR - Corea 87
IT - Italia 82
UA - Ucraina 58
TR - Turchia 35
BD - Bangladesh 30
CA - Canada 27
FI - Finlandia 23
FR - Francia 22
NL - Olanda 22
BG - Bulgaria 21
LT - Lituania 21
IE - Irlanda 18
IN - India 15
MX - Messico 13
AR - Argentina 12
ID - Indonesia 7
IQ - Iraq 7
ES - Italia 6
PH - Filippine 6
ZA - Sudafrica 6
JP - Giappone 5
PK - Pakistan 5
BO - Bolivia 4
CL - Cile 4
CO - Colombia 4
KE - Kenya 4
MA - Marocco 4
AE - Emirati Arabi Uniti 3
CR - Costa Rica 3
EG - Egitto 3
JO - Giordania 3
OM - Oman 3
VE - Venezuela 3
AT - Austria 2
BE - Belgio 2
BY - Bielorussia 2
EC - Ecuador 2
GR - Grecia 2
MY - Malesia 2
PY - Paraguay 2
SA - Arabia Saudita 2
SY - Repubblica araba siriana 2
TH - Thailandia 2
UZ - Uzbekistan 2
AL - Albania 1
AM - Armenia 1
AU - Australia 1
AZ - Azerbaigian 1
BB - Barbados 1
CG - Congo 1
CI - Costa d'Avorio 1
CW - ???statistics.table.value.countryCode.CW??? 1
CY - Cipro 1
CZ - Repubblica Ceca 1
HN - Honduras 1
HU - Ungheria 1
KG - Kirghizistan 1
LA - Repubblica Popolare Democratica del Laos 1
LV - Lettonia 1
LY - Libia 1
ML - Mali 1
MM - Myanmar 1
NI - Nicaragua 1
NO - Norvegia 1
NP - Nepal 1
PA - Panama 1
PE - Perù 1
PT - Portogallo 1
QA - Qatar 1
RS - Serbia 1
SK - Slovacchia (Repubblica Slovacca) 1
SV - El Salvador 1
TN - Tunisia 1
TT - Trinidad e Tobago 1
XK - ???statistics.table.value.countryCode.XK??? 1
ZM - Zambia 1
Totale 5.827
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Città #
Ashburn 293
Hefei 284
Warsaw 267
Santa Clara 251
Fairfield 206
Singapore 206
Southend 203
Hong Kong 201
San Jose 163
Council Bluffs 144
Chandler 137
Nyköping 115
Dearborn 104
Woodbridge 102
Beijing 93
Jacksonville 91
Seoul 87
Houston 83
Seattle 77
Cambridge 64
Wilmington 55
London 48
The Dalles 46
Ho Chi Minh City 45
Los Angeles 45
Hanoi 40
Eugene 36
Ann Arbor 30
Izmir 29
Phoenix 29
Columbus 24
San Diego 23
Milan 22
Helsinki 21
Princeton 21
Amsterdam 20
Chicago 20
Kent 20
New York 20
Sofia 20
Dublin 18
Dallas 15
Lauterbourg 15
Moscow 14
Bremen 12
Buffalo 11
Montreal 11
Da Nang 10
São Paulo 10
Brooklyn 9
Redondo Beach 8
Salt Lake City 8
Denver 7
Grafing 7
Haiphong 7
Nanjing 6
Orem 6
Atlanta 5
Mexico City 5
Miano 5
Querétaro 5
Rio de Janeiro 5
San Michele All'adige 5
Shanghai 5
Tokyo 5
Vancouver 5
Chennai 4
Curitiba 4
Hangzhou 4
Johannesburg 4
Karachi 4
Nairobi 4
Napa 4
Tampa 4
Amman 3
Biên Hòa 3
Boston 3
Brantford 3
Charlotte 3
Istanbul 3
Manchester 3
Norfolk 3
Nuremberg 3
Philadelphia 3
Poplar 3
San Francisco 3
San José 3
Santiago 3
Sterling 3
Boardman 2
Brussels 2
Cairo 2
Cangzhou 2
Carapicuíba 2
Changsha 2
Detroit 2
Dhaka 2
Dubai 2
Elk Grove Village 2
Enschede 2
Totale 4.103
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Nome #
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors 635
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 332
A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures 326
Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs 318
Impact Ionization and Photon Emission in MOS Capacitors and FETs 315
Analytical and numerical study of the impact of HALOS on short channel and hot carrier effects in scaled MOSFETs 309
Physically Based modeling of Low Field Electron Mobility in Ultrathin Single- and Double-Gate SOI n-MOSFETs 300
Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs 299
Well-tempered MOSFETs: 1D versus 2D quantum analysis 287
Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool 278
Study of low field electron transport in ultra-thin single and double gate SOI MOSFETs 277
Device simulation for decananometer MOSFETs 275
Short channel and hot carrier performance of ULSI MOSFETs with halo structures 247
Advanced Physically Based Device Modeling for Gate Current and Hot Carrier Phenomena in Scaled MOSFETs 239
Tunnelling Injection in Thin Oxide MOS Capacitors 232
Quantitative Assesment of mobility degradation by Remote Coulomb Scattering in Ultra-thin oxide MOSFETs: measurement and simulations 227
On the Optimization of HALOs for 0.1 micron MOSFETs and Below 219
Two-dimensional quantum mechanical aspects in the charge distribution of ULSI silicon MOSFETs 211
Erratum: A comparative analysis of substrate current generation mechanisms in tunneling MOS capacitors (IEEE Electron Devices (2002) 49 (1427-1435)) 189
Quantitative assessment of mobility degradation by remote coulomb scattering in ultra-thin oxide MOSFETs: Measurements and simulations 188
Investigation on convergence and stability of self-consistent Monte Carlo device simulations 146
Totale 5.849
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Categoria #
all - tutte 20.098
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 20.098
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022295 0 0 18 19 5 44 22 6 43 23 90 25
2022/2023401 77 75 24 36 50 38 18 17 47 6 8 5
2023/2024200 7 8 4 15 52 22 17 19 0 2 44 10
2024/2025968 23 6 21 63 157 113 33 47 109 21 186 189
2025/20262.094 146 118 197 193 320 364 273 46 129 81 154 73
2026/2027253 32 112 109 0 0 0 0 0 0 0 0 0
Totale 5.849