ABRAMO, ANTONIO
 Distribuzione geografica
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Continente #
NA - Nord America 1.838
EU - Europa 1.199
AS - Asia 1.081
SA - Sud America 95
AF - Africa 9
Continente sconosciuto - Info sul continente non disponibili 1
OC - Oceania 1
Totale 4.224
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Nazione #
US - Stati Uniti d'America 1.812
CN - Cina 519
DE - Germania 370
GB - Regno Unito 281
SG - Singapore 254
SE - Svezia 251
HK - Hong Kong 144
RU - Federazione Russa 116
BR - Brasile 79
KR - Corea 72
UA - Ucraina 53
VN - Vietnam 36
IT - Italia 35
TR - Turchia 31
LT - Lituania 21
BG - Bulgaria 20
IE - Irlanda 18
CA - Canada 15
FI - Finlandia 12
MX - Messico 10
AR - Argentina 9
BD - Bangladesh 7
ES - Italia 4
FR - Francia 4
ID - Indonesia 4
ZA - Sudafrica 4
JP - Giappone 3
AT - Austria 2
BE - Belgio 2
BO - Bolivia 2
EG - Egitto 2
GR - Grecia 2
IN - India 2
IQ - Iraq 2
MA - Marocco 2
PL - Polonia 2
VE - Venezuela 2
AE - Emirati Arabi Uniti 1
AL - Albania 1
AU - Australia 1
AZ - Azerbaigian 1
BY - Bielorussia 1
CL - Cile 1
CO - Colombia 1
CR - Costa Rica 1
CZ - Repubblica Ceca 1
EC - Ecuador 1
HU - Ungheria 1
KE - Kenya 1
KG - Kirghizistan 1
LA - Repubblica Popolare Democratica del Laos 1
LV - Lettonia 1
NO - Norvegia 1
PK - Pakistan 1
SY - Repubblica araba siriana 1
TH - Thailandia 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 4.224
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Città #
Hefei 284
Santa Clara 240
Fairfield 206
Southend 203
Ashburn 165
Singapore 152
Hong Kong 144
Chandler 137
Nyköping 115
Dearborn 104
Woodbridge 102
Jacksonville 88
Beijing 86
Houston 81
Seattle 76
Seoul 72
Cambridge 64
Wilmington 55
London 47
Eugene 36
Ann Arbor 30
Izmir 29
San Diego 23
Columbus 22
Princeton 21
Kent 20
Sofia 20
Los Angeles 19
Dublin 18
Ho Chi Minh City 16
Moscow 14
New York 14
Bremen 12
Dallas 12
Helsinki 11
Brooklyn 8
Buffalo 8
Hanoi 8
Redondo Beach 8
Grafing 7
Montreal 7
Chicago 6
Nanjing 6
São Paulo 6
Denver 5
Querétaro 5
San Michele All'adige 5
Shanghai 5
Council Bluffs 4
Hangzhou 4
Mexico City 4
Salt Lake City 4
Johannesburg 3
Nuremberg 3
Phoenix 3
Rio de Janeiro 3
Tokyo 3
Vancouver 3
Atlanta 2
Boardman 2
Brussels 2
Cairo 2
Cangzhou 2
Carapicuíba 2
Curitiba 2
Da Nang 2
Dhaka 2
Esmeraldas 2
Foz do Iguaçu 2
Guangzhou 2
Hounslow 2
Kilburn 2
Moses Lake 2
Norfolk 2
Poplar 2
Porto Alegre 2
Pottstown 2
Prescot 2
Quận Một 2
San Francisco 2
Stockholm 2
Tampa 2
Tolmezzo 2
Uberlândia 2
Warsaw 2
Alvarado 1
Andradina 1
Angra dos Reis 1
Anicuns 1
Araguaína 1
Armavir 1
Athens 1
Augusta 1
Avellaneda 1
Baku 1
Bandung 1
Baotou 1
Barquisimeto 1
Bauru 1
Belford Roxo 1
Totale 2.925
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Nome #
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 264
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors 259
Impact Ionization and Photon Emission in MOS Capacitors and FETs 251
A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures 244
Analytical and numerical study of the impact of HALOS on short channel and hot carrier effects in scaled MOSFETs 243
Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs 235
Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool 234
Physically Based modeling of Low Field Electron Mobility in Ultrathin Single- and Double-Gate SOI n-MOSFETs 228
Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs 226
Well-tempered MOSFETs: 1D versus 2D quantum analysis 224
Device simulation for decananometer MOSFETs 218
Study of low field electron transport in ultra-thin single and double gate SOI MOSFETs 206
Advanced Physically Based Device Modeling for Gate Current and Hot Carrier Phenomena in Scaled MOSFETs 190
Short channel and hot carrier performance of ULSI MOSFETs with halo structures 180
Quantitative Assesment of mobility degradation by Remote Coulomb Scattering in Ultra-thin oxide MOSFETs: measurement and simulations 179
On the Optimization of HALOs for 0.1 micron MOSFETs and Below 176
Tunnelling Injection in Thin Oxide MOS Capacitors 176
Two-dimensional quantum mechanical aspects in the charge distribution of ULSI silicon MOSFETs 169
Quantitative assessment of mobility degradation by remote coulomb scattering in ultra-thin oxide MOSFETs: Measurements and simulations 134
Erratum: A comparative analysis of substrate current generation mechanisms in tunneling MOS capacitors (IEEE Electron Devices (2002) 49 (1427-1435)) 125
Investigation on convergence and stability of self-consistent Monte Carlo device simulations 85
Totale 4.246
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Categoria #
all - tutte 16.030
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 16.030
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021251 0 0 0 0 51 21 29 63 7 60 8 12
2021/2022355 13 47 18 19 5 44 22 6 43 23 90 25
2022/2023401 77 75 24 36 50 38 18 17 47 6 8 5
2023/2024200 7 8 4 15 52 22 17 19 0 2 44 10
2024/2025968 23 6 21 63 157 113 33 47 109 21 186 189
2025/2026744 146 118 197 193 90 0 0 0 0 0 0 0
Totale 4.246