ABRAMO, ANTONIO
 Distribuzione geografica
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Continente #
NA - Nord America 2.044
EU - Europa 1.491
AS - Asia 1.204
SA - Sud America 104
AF - Africa 13
Continente sconosciuto - Info sul continente non disponibili 1
OC - Oceania 1
Totale 4.858
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Nazione #
US - Stati Uniti d'America 2.013
CN - Cina 530
DE - Germania 373
SG - Singapore 313
GB - Regno Unito 282
PL - Polonia 267
SE - Svezia 251
HK - Hong Kong 146
RU - Federazione Russa 117
BR - Brasile 84
VN - Vietnam 75
KR - Corea 72
UA - Ucraina 56
IT - Italia 35
TR - Turchia 31
LT - Lituania 21
BG - Bulgaria 20
CA - Canada 18
IE - Irlanda 18
NL - Olanda 18
FI - Finlandia 13
MX - Messico 11
AR - Argentina 10
BD - Bangladesh 10
ID - Indonesia 6
ZA - Sudafrica 6
ES - Italia 4
FR - Francia 4
IQ - Iraq 4
JP - Giappone 4
EG - Egitto 3
IN - India 3
PK - Pakistan 3
VE - Venezuela 3
AT - Austria 2
BE - Belgio 2
BO - Bolivia 2
CL - Cile 2
GR - Grecia 2
MA - Marocco 2
AE - Emirati Arabi Uniti 1
AL - Albania 1
AU - Australia 1
AZ - Azerbaigian 1
BY - Bielorussia 1
CO - Colombia 1
CR - Costa Rica 1
CZ - Repubblica Ceca 1
EC - Ecuador 1
HU - Ungheria 1
KE - Kenya 1
KG - Kirghizistan 1
LA - Repubblica Popolare Democratica del Laos 1
LV - Lettonia 1
ML - Mali 1
NO - Norvegia 1
OM - Oman 1
PA - Panama 1
PE - Perù 1
SY - Repubblica araba siriana 1
TH - Thailandia 1
XK - ???statistics.table.value.countryCode.XK??? 1
Totale 4.858
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Città #
Hefei 284
Warsaw 267
Santa Clara 240
Fairfield 206
Southend 203
Ashburn 189
Singapore 188
Hong Kong 146
Chandler 137
Nyköping 115
Dearborn 104
Woodbridge 102
Jacksonville 89
Beijing 86
Houston 83
Seattle 77
Seoul 72
Cambridge 64
Wilmington 55
London 47
Eugene 36
The Dalles 34
Ann Arbor 30
Izmir 29
Los Angeles 29
San Jose 28
Ho Chi Minh City 25
Columbus 23
San Diego 23
Princeton 21
Kent 20
Sofia 20
Chicago 19
Hanoi 19
Amsterdam 18
Dublin 18
New York 17
Moscow 14
Dallas 13
Bremen 12
Helsinki 11
Montreal 10
Brooklyn 9
Buffalo 9
Redondo Beach 8
Salt Lake City 8
Grafing 7
São Paulo 7
Denver 6
Nanjing 6
Atlanta 5
Da Nang 5
Haiphong 5
Querétaro 5
San Michele All'adige 5
Shanghai 5
Council Bluffs 4
Hangzhou 4
Johannesburg 4
Mexico City 4
Phoenix 4
Tampa 4
Tokyo 4
Boston 3
Norfolk 3
Nuremberg 3
Philadelphia 3
Poplar 3
Rio de Janeiro 3
Sterling 3
Vancouver 3
Biên Hòa 2
Boardman 2
Brussels 2
Cairo 2
Cangzhou 2
Carapicuíba 2
Changsha 2
Curitiba 2
Detroit 2
Dhaka 2
Elk Grove Village 2
Esmeraldas 2
Foz do Iguaçu 2
Frankfurt am Main 2
Guangzhou 2
Hackensack 2
Hounslow 2
Karachi 2
Kilburn 2
Moses Lake 2
Munich 2
Orem 2
Porto Alegre 2
Pottstown 2
Prescot 2
Quận Một 2
San Francisco 2
Santiago 2
Stockholm 2
Totale 3.423
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Nome #
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors 549
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 293
Impact Ionization and Photon Emission in MOS Capacitors and FETs 277
A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures 271
Analytical and numerical study of the impact of HALOS on short channel and hot carrier effects in scaled MOSFETs 269
Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs 253
Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool 248
Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs 243
Physically Based modeling of Low Field Electron Mobility in Ultrathin Single- and Double-Gate SOI n-MOSFETs 240
Well-tempered MOSFETs: 1D versus 2D quantum analysis 239
Device simulation for decananometer MOSFETs 233
Study of low field electron transport in ultra-thin single and double gate SOI MOSFETs 232
Advanced Physically Based Device Modeling for Gate Current and Hot Carrier Phenomena in Scaled MOSFETs 203
Short channel and hot carrier performance of ULSI MOSFETs with halo structures 195
Quantitative Assesment of mobility degradation by Remote Coulomb Scattering in Ultra-thin oxide MOSFETs: measurement and simulations 188
On the Optimization of HALOs for 0.1 micron MOSFETs and Below 186
Tunnelling Injection in Thin Oxide MOS Capacitors 185
Two-dimensional quantum mechanical aspects in the charge distribution of ULSI silicon MOSFETs 178
Quantitative assessment of mobility degradation by remote coulomb scattering in ultra-thin oxide MOSFETs: Measurements and simulations 155
Erratum: A comparative analysis of substrate current generation mechanisms in tunneling MOS capacitors (IEEE Electron Devices (2002) 49 (1427-1435)) 134
Investigation on convergence and stability of self-consistent Monte Carlo device simulations 109
Totale 4.880
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Categoria #
all - tutte 17.105
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 17.105
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021179 0 0 0 0 0 0 29 63 7 60 8 12
2021/2022355 13 47 18 19 5 44 22 6 43 23 90 25
2022/2023401 77 75 24 36 50 38 18 17 47 6 8 5
2023/2024200 7 8 4 15 52 22 17 19 0 2 44 10
2024/2025968 23 6 21 63 157 113 33 47 109 21 186 189
2025/20261.378 146 118 197 193 320 364 40 0 0 0 0 0
Totale 4.880