ABRAMO, ANTONIO
 Distribuzione geografica
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Continente #
NA - Nord America 1.320
EU - Europa 1.003
AS - Asia 134
OC - Oceania 1
Totale 2.458
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Nazione #
US - Stati Uniti d'America 1.320
DE - Germania 365
GB - Regno Unito 236
SE - Svezia 215
RU - Federazione Russa 72
HK - Hong Kong 54
UA - Ucraina 53
CN - Cina 52
TR - Turchia 28
BG - Bulgaria 20
IE - Irlanda 16
IT - Italia 11
FI - Finlandia 10
BE - Belgio 2
AT - Austria 1
AU - Australia 1
FR - Francia 1
HU - Ungheria 1
Totale 2.458
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Città #
Fairfield 206
Southend 203
Chandler 137
Ashburn 132
Nyköping 115
Dearborn 104
Woodbridge 102
Jacksonville 88
Houston 79
Seattle 76
Cambridge 64
Wilmington 55
Hong Kong 54
Eugene 36
Ann Arbor 30
Izmir 28
Beijing 23
San Diego 23
Princeton 21
Sofia 20
Dublin 16
Bremen 12
Helsinki 10
Grafing 7
Nanjing 6
San Michele All'adige 5
London 4
New York 4
Boardman 2
Brussels 2
Guangzhou 2
Hangzhou 2
Hefei 2
Hounslow 2
Kilburn 2
Prescot 2
Tolmezzo 2
Augusta 1
Baotou 1
Budapest 1
Chengdu 1
Chicago 1
Edinburgh 1
Fuzhou 1
Grenoble 1
Hendon 1
Islington 1
Jinan 1
Kunming 1
Los Angeles 1
Melbourne 1
Modena 1
Ningbo 1
Norwalk 1
Shaoxing 1
Shenyang 1
Washington 1
Wuhan 1
Yinchuan 1
Totale 1.700
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Nome #
Impact Ionization and Photon Emission in MOS Capacitors and FETs 173
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 163
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors 159
Physically Based modeling of Low Field Electron Mobility in Ultrathin Single- and Double-Gate SOI n-MOSFETs 157
Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool 154
A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures 152
Analytical and numerical study of the impact of HALOS on short channel and hot carrier effects in scaled MOSFETs 152
Well-tempered MOSFETs: 1D versus 2D quantum analysis 151
Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs 151
Device simulation for decananometer MOSFETs 143
Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs 141
Study of low field electron transport in ultra-thin single and double gate SOI MOSFETs 128
Advanced Physically Based Device Modeling for Gate Current and Hot Carrier Phenomena in Scaled MOSFETs 100
On the Optimization of HALOs for 0.1 micron MOSFETs and Below 97
Quantitative Assesment of mobility degradation by Remote Coulomb Scattering in Ultra-thin oxide MOSFETs: measurement and simulations 96
Short channel and hot carrier performance of ULSI MOSFETs with halo structures 93
Two-dimensional quantum mechanical aspects in the charge distribution of ULSI silicon MOSFETs 90
Tunnelling Injection in Thin Oxide MOS Capacitors 88
Quantitative assessment of mobility degradation by remote coulomb scattering in ultra-thin oxide MOSFETs: Measurements and simulations 47
Erratum: A comparative analysis of substrate current generation mechanisms in tunneling MOS capacitors (IEEE Electron Devices (2002) 49 (1427-1435)) 42
Investigation on convergence and stability of self-consistent Monte Carlo device simulations 3
Totale 2.480
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Categoria #
all - tutte 9.436
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 9.436
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019196 0 0 0 0 0 0 0 0 0 0 101 95
2019/2020660 39 51 11 27 69 110 110 66 52 13 68 44
2020/2021412 60 13 60 28 51 21 29 63 7 60 8 12
2021/2022355 13 47 18 19 5 44 22 6 43 23 90 25
2022/2023401 77 75 24 36 50 38 18 17 47 6 8 5
2023/2024146 7 8 4 15 52 22 17 19 0 2 0 0
Totale 2.480