ABRAMO, ANTONIO
 Distribuzione geografica
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Continente #
NA - Nord America 2.349
EU - Europa 1.573
AS - Asia 1.492
SA - Sud America 140
AF - Africa 23
Continente sconosciuto - Info sul continente non disponibili 1
OC - Oceania 1
Totale 5.579
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Nazione #
US - Stati Uniti d'America 2.304
CN - Cina 543
DE - Germania 373
SG - Singapore 372
GB - Regno Unito 286
PL - Polonia 267
SE - Svezia 252
HK - Hong Kong 205
VN - Vietnam 148
RU - Federazione Russa 117
BR - Brasile 108
KR - Corea 87
IT - Italia 71
UA - Ucraina 58
TR - Turchia 35
BD - Bangladesh 30
CA - Canada 25
FI - Finlandia 23
FR - Francia 22
NL - Olanda 22
BG - Bulgaria 21
LT - Lituania 21
IE - Irlanda 18
IN - India 15
MX - Messico 13
AR - Argentina 12
ID - Indonesia 7
IQ - Iraq 7
ES - Italia 6
PH - Filippine 6
ZA - Sudafrica 6
JP - Giappone 5
PK - Pakistan 5
BO - Bolivia 4
CL - Cile 4
CO - Colombia 4
KE - Kenya 4
MA - Marocco 4
AE - Emirati Arabi Uniti 3
EG - Egitto 3
JO - Giordania 3
OM - Oman 3
VE - Venezuela 3
AT - Austria 2
BE - Belgio 2
BY - Bielorussia 2
CR - Costa Rica 2
EC - Ecuador 2
GR - Grecia 2
MY - Malesia 2
PY - Paraguay 2
SA - Arabia Saudita 2
SY - Repubblica araba siriana 2
TH - Thailandia 2
UZ - Uzbekistan 2
AL - Albania 1
AM - Armenia 1
AU - Australia 1
AZ - Azerbaigian 1
BB - Barbados 1
CG - Congo 1
CI - Costa d'Avorio 1
CY - Cipro 1
CZ - Repubblica Ceca 1
HN - Honduras 1
HU - Ungheria 1
KG - Kirghizistan 1
LA - Repubblica Popolare Democratica del Laos 1
LV - Lettonia 1
LY - Libia 1
ML - Mali 1
MM - Myanmar 1
NI - Nicaragua 1
NO - Norvegia 1
NP - Nepal 1
PA - Panama 1
PE - Perù 1
PT - Portogallo 1
QA - Qatar 1
RS - Serbia 1
SK - Slovacchia (Repubblica Slovacca) 1
TN - Tunisia 1
TT - Trinidad e Tobago 1
XK - ???statistics.table.value.countryCode.XK??? 1
ZM - Zambia 1
Totale 5.579
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Città #
Hefei 284
Warsaw 267
Santa Clara 245
Ashburn 235
Fairfield 206
Singapore 206
Southend 203
Hong Kong 201
San Jose 150
Chandler 137
Nyköping 115
Dearborn 104
Woodbridge 102
Beijing 91
Jacksonville 91
Seoul 87
Houston 83
Seattle 77
Cambridge 64
Council Bluffs 61
Wilmington 55
London 47
The Dalles 46
Ho Chi Minh City 45
Los Angeles 43
Hanoi 40
Eugene 36
Ann Arbor 30
Izmir 29
Columbus 23
San Diego 23
Helsinki 21
Princeton 21
Amsterdam 20
Kent 20
Sofia 20
Chicago 19
New York 19
Dublin 18
Lauterbourg 15
Milan 15
Moscow 14
Dallas 13
Bremen 12
Montreal 11
Da Nang 10
São Paulo 10
Brooklyn 9
Buffalo 9
Redondo Beach 8
Salt Lake City 8
Grafing 7
Haiphong 7
Denver 6
Nanjing 6
Orem 6
Atlanta 5
Mexico City 5
Miano 5
Querétaro 5
Rio de Janeiro 5
San Michele All'adige 5
Shanghai 5
Tokyo 5
Chennai 4
Curitiba 4
Hangzhou 4
Johannesburg 4
Karachi 4
Nairobi 4
Napa 4
Phoenix 4
Tampa 4
Vancouver 4
Amman 3
Biên Hòa 3
Boston 3
Brantford 3
Istanbul 3
Manchester 3
Norfolk 3
Nuremberg 3
Philadelphia 3
Poplar 3
Santiago 3
Sterling 3
Boardman 2
Brussels 2
Cairo 2
Cangzhou 2
Carapicuíba 2
Changsha 2
Charlotte 2
Detroit 2
Dhaka 2
Dubai 2
Elk Grove Village 2
Enschede 2
Esmeraldas 2
Foz do Iguaçu 2
Totale 3.894
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Nome #
A Comparative Analysis of Substrate Current Generation Mechanisms in Tunneling MOS Capacitors 619
A comparison between semi-classical and quantum-mechanical escape-times for gate current calculations 324
A combined transport-injection model for hot-electron and hot-hole injection in the gate oxide of MOS structures 309
Impact Ionization and Photon Emission in MOS Capacitors and FETs 304
Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs 304
Analytical and numerical study of the impact of HALOS on short channel and hot carrier effects in scaled MOSFETs 298
Physically Based modeling of Low Field Electron Mobility in Ultrathin Single- and Double-Gate SOI n-MOSFETs 285
Two-dimensional quantum mechanical simulation of charge distribution in silicon MOSFETs 285
Well-tempered MOSFETs: 1D versus 2D quantum analysis 277
Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool 271
Study of low field electron transport in ultra-thin single and double gate SOI MOSFETs 268
Device simulation for decananometer MOSFETs 263
Short channel and hot carrier performance of ULSI MOSFETs with halo structures 231
Advanced Physically Based Device Modeling for Gate Current and Hot Carrier Phenomena in Scaled MOSFETs 230
Tunnelling Injection in Thin Oxide MOS Capacitors 223
Quantitative Assesment of mobility degradation by Remote Coulomb Scattering in Ultra-thin oxide MOSFETs: measurement and simulations 217
On the Optimization of HALOs for 0.1 micron MOSFETs and Below 208
Two-dimensional quantum mechanical aspects in the charge distribution of ULSI silicon MOSFETs 202
Erratum: A comparative analysis of substrate current generation mechanisms in tunneling MOS capacitors (IEEE Electron Devices (2002) 49 (1427-1435)) 175
Quantitative assessment of mobility degradation by remote coulomb scattering in ultra-thin oxide MOSFETs: Measurements and simulations 172
Investigation on convergence and stability of self-consistent Monte Carlo device simulations 136
Totale 5.601
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Categoria #
all - tutte 19.133
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 19.133
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022355 13 47 18 19 5 44 22 6 43 23 90 25
2022/2023401 77 75 24 36 50 38 18 17 47 6 8 5
2023/2024200 7 8 4 15 52 22 17 19 0 2 44 10
2024/2025968 23 6 21 63 157 113 33 47 109 21 186 189
2025/20262.094 146 118 197 193 320 364 273 46 129 81 154 73
2026/20275 5 0 0 0 0 0 0 0 0 0 0 0
Totale 5.601