ESSENI, DAVID
 Distribuzione geografica
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Continente #
AS - Asia 1.172
NA - Nord America 566
EU - Europa 300
SA - Sud America 118
AF - Africa 13
OC - Oceania 1
Totale 2.170
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Nazione #
CN - Cina 575
US - Stati Uniti d'America 557
SG - Singapore 338
HK - Hong Kong 132
BR - Brasile 98
KR - Corea 80
GB - Regno Unito 77
SE - Svezia 72
RU - Federazione Russa 61
NL - Olanda 22
LT - Lituania 20
IT - Italia 18
VN - Vietnam 13
AR - Argentina 10
DE - Germania 10
BD - Bangladesh 6
FR - Francia 6
IQ - Iraq 6
ID - Indonesia 5
JP - Giappone 5
MX - Messico 5
IN - India 4
VE - Venezuela 3
ZA - Sudafrica 3
AT - Austria 2
BE - Belgio 2
CO - Colombia 2
CZ - Repubblica Ceca 2
EC - Ecuador 2
EG - Egitto 2
ES - Italia 2
PK - Pakistan 2
SN - Senegal 2
AO - Angola 1
AU - Australia 1
BO - Bolivia 1
CA - Canada 1
CL - Cile 1
DZ - Algeria 1
ET - Etiopia 1
FI - Finlandia 1
HR - Croazia 1
IR - Iran 1
JM - Giamaica 1
JO - Giordania 1
KE - Kenya 1
MA - Marocco 1
NP - Nepal 1
PA - Panama 1
PL - Polonia 1
PT - Portogallo 1
PY - Paraguay 1
RO - Romania 1
TN - Tunisia 1
TR - Turchia 1
TT - Trinidad e Tobago 1
TW - Taiwan 1
UA - Ucraina 1
UZ - Uzbekistan 1
Totale 2.170
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Città #
Hefei 414
Santa Clara 229
Singapore 182
Hong Kong 132
Seoul 80
London 66
Beijing 41
Ashburn 28
Kent 25
Chicago 24
Los Angeles 24
Amsterdam 22
The Dalles 17
New York 16
Buffalo 15
Dallas 12
Shanghai 12
Moscow 11
Salt Lake City 11
São Paulo 8
Munich 7
Redondo Beach 7
Atlanta 6
Brasília 5
Cleveland 5
Guangzhou 5
Paris 5
Tokyo 5
Brooklyn 4
Changsha 4
Detroit 4
Jakarta 4
Tampa 4
Arapiraca 3
Campinas 3
City of London 3
Elk Grove Village 3
Hanoi 3
Hohhot 3
Kilburn 3
Mexico City 3
Phoenix 3
Baghdad 2
Balneário Camboriú 2
Belo Horizonte 2
Boituva 2
Boston 2
Brescia 2
Brussels 2
Cairo 2
Caracas 2
Changchun 2
Charlotte 2
Dakar 2
Dhaka 2
Fortaleza 2
Gravataí 2
Haiphong 2
Ho Chi Minh City 2
Jersey City 2
Johannesburg 2
Loudi 2
Modena 2
Newark 2
North Bergen 2
Pelotas 2
Poplar 2
Rio de Janeiro 2
Rivignano 2
Rome 2
St Louis 2
Stockholm 2
São Bernardo do Campo 2
Taubaté 2
Wilmington 2
Acará 1
Addis Ababa 1
Albuquerque 1
Algiers 1
Aliquippa 1
Amman 1
Aparecida de Goiânia 1
Aurora do Pará 1
Aylesbury 1
Babol 1
Bacabal 1
Bad Bellingen 1
Belford Roxo 1
Billingham 1
Bobigny 1
Bogotá 1
Bonndorf 1
Boulogne Sur Mer 1
Bragança Paulista 1
Brno 1
Buenos Aires 1
Buracão 1
Burlington 1
Caldwell 1
Camboriú 1
Totale 1.552
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Nome #
Full-Band Quantization Analysis Reveals a Third Valley in Silicon Inversion Layers 87
Simulations and comparisons of basic analog and digital circuit blocks employing Tunnel FETs and conventional FinFETs 83
Semi-classical transport in MoS2 and MoS2 transistors by a Monte Carlo approach 82
Drain Current Improvements in Uniaxially Strained p-MOSFETs: a Multi-Subband Monte Carlo Study 81
Modeling Low and High Field Uniform Transport in Monolayer MoS2 80
Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating 78
Mobility in FDSOI Devices: Monte Carlo and Kubo Greenwood Approaches Compared to NEGF Simulations 78
Mixed Tunnel-FET/MOSFET Level Shifters: A New Proposal to Extend the Tunnel-FET Application Domain 78
Drain current improvements in uniaxially strained p-MOSFETs: A Multi-Subband Monte Carlo study 77
Improved understanding of metal–graphene contacts 76
Linear combination of bulk bands method for investigating the low-dimensional electron gas in nanostructured devices 75
A review of selected topics in physics based modeling for tunnel field-effect transistors 74
Mobility in high-K metal gate UTBB-FDSOI devices: From NEGF to TCAD perspectives 73
A virtual III-V Tunnel FET technology platform for ultra-low voltage comparators and level shifters 72
Editorial: Selected papers from the 8th Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2022) 72
Applicability of Macroscopic Transport Models to Decananometer MOSFETs 72
Revised Stability Analysis of the Nonlinear Poisson Scheme in Self-Consistent Monte Carlo Device Simulations 70
Editorial: Letters from the 8th Joint International EUROSOI workshop and International Conference on Ultimate Integration on Silicon 69
Pseudo-spectral methods for the efficient simulation of quantization effects in nanoscale MOS transistors 66
Modeling Approaches for Gain, Noise and Time Response of Avalanche Photodiodes for X-Rays Detection 66
Early assessment of tunnel-FET for energy-efficient logic circuits 65
Comparison of BULK and Ultra-Thin Double Gate SOI MOSFETs for the 65 nm Technology Node: A Monte Carlo Study 65
A New Model for the Backscatter Coefficient in Nanoscale MOSFETs 64
Device Modeling 64
Effect of the Grid Size on the Stability of Self-Consistent Monte-Carlo Simulations 63
Theory of Motion at the band crossing points in bulk semiconductor crystals and in inversion layers 62
Stability of Self-Consistent Monte Carlo Simulations: Effects of the Grid Size and of the Coupling Scheme 61
Modeling and optimization of graphene ballistic rectifiers 59
Failure of the Scalar Dielectric Function Approach for the Screening Modeling in Double-Gate SOI MOSFETs and in FinFETs 56
Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes 55
Full Band and Approximated Solutions of the Schr\"odinger Equation in Silicon Inversion Layers 44
Stability of Self-Consistent Monte-Carlo Simulations: Revised Analysis of Linear and Non-Linear Poisson Schemes 36
Totale 2.203
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Categoria #
all - tutte 12.434
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 12.434
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/2024131 0 0 0 0 0 48 11 10 6 3 23 30
2024/20251.015 17 6 2 62 163 171 69 25 120 37 175 168
2025/20261.057 196 192 289 188 141 51 0 0 0 0 0 0
Totale 2.203