ESSENI, DAVID
 Distribuzione geografica
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Continente #
AS - Asia 1.175
NA - Nord America 662
EU - Europa 301
SA - Sud America 119
AF - Africa 14
OC - Oceania 1
Totale 2.272
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Nazione #
US - Stati Uniti d'America 653
CN - Cina 577
SG - Singapore 338
HK - Hong Kong 132
BR - Brasile 99
KR - Corea 80
GB - Regno Unito 77
SE - Svezia 72
RU - Federazione Russa 61
NL - Olanda 22
LT - Lituania 20
IT - Italia 18
VN - Vietnam 13
AR - Argentina 10
DE - Germania 10
BD - Bangladesh 6
FR - Francia 6
ID - Indonesia 6
IQ - Iraq 6
JP - Giappone 5
MX - Messico 5
IN - India 4
SN - Senegal 3
VE - Venezuela 3
ZA - Sudafrica 3
AT - Austria 2
BE - Belgio 2
CO - Colombia 2
CZ - Repubblica Ceca 2
EC - Ecuador 2
EG - Egitto 2
ES - Italia 2
PK - Pakistan 2
AO - Angola 1
AU - Australia 1
BG - Bulgaria 1
BO - Bolivia 1
CA - Canada 1
CL - Cile 1
DZ - Algeria 1
ET - Etiopia 1
FI - Finlandia 1
HR - Croazia 1
IR - Iran 1
JM - Giamaica 1
JO - Giordania 1
KE - Kenya 1
MA - Marocco 1
NP - Nepal 1
PA - Panama 1
PL - Polonia 1
PT - Portogallo 1
PY - Paraguay 1
RO - Romania 1
TN - Tunisia 1
TR - Turchia 1
TT - Trinidad e Tobago 1
TW - Taiwan 1
UA - Ucraina 1
UZ - Uzbekistan 1
Totale 2.272
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Città #
Hefei 414
Santa Clara 229
Singapore 182
Hong Kong 132
Seoul 80
London 66
San Jose 65
Beijing 41
Ashburn 38
The Dalles 30
Kent 25
Chicago 24
Los Angeles 24
Amsterdam 22
New York 16
Buffalo 15
Dallas 12
Salt Lake City 12
Shanghai 12
Moscow 11
São Paulo 8
Munich 7
Redondo Beach 7
Atlanta 6
Brasília 5
Cleveland 5
Detroit 5
Guangzhou 5
Paris 5
Tampa 5
Tokyo 5
Brooklyn 4
Changsha 4
Jakarta 4
Arapiraca 3
Campinas 3
City of London 3
Dakar 3
Elk Grove Village 3
Hanoi 3
Hohhot 3
Kilburn 3
Mexico City 3
Phoenix 3
Rio de Janeiro 3
Baghdad 2
Balneário Camboriú 2
Belo Horizonte 2
Boituva 2
Boston 2
Brescia 2
Brussels 2
Cairo 2
Caracas 2
Changchun 2
Charlotte 2
Dhaka 2
Fortaleza 2
Gravataí 2
Haiphong 2
Ho Chi Minh City 2
Jersey City 2
Johannesburg 2
Loudi 2
Miami 2
Modena 2
Newark 2
North Bergen 2
Pelotas 2
Poplar 2
Rivignano 2
Rome 2
St Louis 2
Stockholm 2
São Bernardo do Campo 2
Taubaté 2
Wilmington 2
Acará 1
Addis Ababa 1
Albuquerque 1
Algiers 1
Aliquippa 1
Amman 1
Aparecida de Goiânia 1
Aurora do Pará 1
Aylesbury 1
Babol 1
Bacabal 1
Bad Bellingen 1
Belford Roxo 1
Billingham 1
Birmingham 1
Bobigny 1
Bogotá 1
Bonndorf 1
Boulogne Sur Mer 1
Bragança Paulista 1
Brno 1
Buenos Aires 1
Buracão 1
Totale 1.645
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Nome #
Full-Band Quantization Analysis Reveals a Third Valley in Silicon Inversion Layers 92
Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating 89
Simulations and comparisons of basic analog and digital circuit blocks employing Tunnel FETs and conventional FinFETs 88
Semi-classical transport in MoS2 and MoS2 transistors by a Monte Carlo approach 87
Drain Current Improvements in Uniaxially Strained p-MOSFETs: a Multi-Subband Monte Carlo Study 85
Mobility in FDSOI Devices: Monte Carlo and Kubo Greenwood Approaches Compared to NEGF Simulations 82
Linear combination of bulk bands method for investigating the low-dimensional electron gas in nanostructured devices 80
Drain current improvements in uniaxially strained p-MOSFETs: A Multi-Subband Monte Carlo study 80
Mixed Tunnel-FET/MOSFET Level Shifters: A New Proposal to Extend the Tunnel-FET Application Domain 80
Modeling Low and High Field Uniform Transport in Monolayer MoS2 80
A review of selected topics in physics based modeling for tunnel field-effect transistors 78
A virtual III-V Tunnel FET technology platform for ultra-low voltage comparators and level shifters 77
Applicability of Macroscopic Transport Models to Decananometer MOSFETs 77
Mobility in high-K metal gate UTBB-FDSOI devices: From NEGF to TCAD perspectives 76
Improved understanding of metal–graphene contacts 76
Editorial: Selected papers from the 8th Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2022) 73
Revised Stability Analysis of the Nonlinear Poisson Scheme in Self-Consistent Monte Carlo Device Simulations 73
Editorial: Letters from the 8th Joint International EUROSOI workshop and International Conference on Ultimate Integration on Silicon 71
Pseudo-spectral methods for the efficient simulation of quantization effects in nanoscale MOS transistors 70
Device Modeling 70
A New Model for the Backscatter Coefficient in Nanoscale MOSFETs 68
Theory of Motion at the band crossing points in bulk semiconductor crystals and in inversion layers 67
Modeling Approaches for Gain, Noise and Time Response of Avalanche Photodiodes for X-Rays Detection 67
Comparison of BULK and Ultra-Thin Double Gate SOI MOSFETs for the 65 nm Technology Node: A Monte Carlo Study 67
Stability of Self-Consistent Monte Carlo Simulations: Effects of the Grid Size and of the Coupling Scheme 65
Early assessment of tunnel-FET for energy-efficient logic circuits 65
Effect of the Grid Size on the Stability of Self-Consistent Monte-Carlo Simulations 64
Modeling and optimization of graphene ballistic rectifiers 61
Failure of the Scalar Dielectric Function Approach for the Screening Modeling in Double-Gate SOI MOSFETs and in FinFETs 57
Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes 57
Full Band and Approximated Solutions of the Schr\"odinger Equation in Silicon Inversion Layers 46
Stability of Self-Consistent Monte-Carlo Simulations: Revised Analysis of Linear and Non-Linear Poisson Schemes 37
Totale 2.305
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Categoria #
all - tutte 12.770
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 12.770
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/2024131 0 0 0 0 0 48 11 10 6 3 23 30
2024/20251.015 17 6 2 62 163 171 69 25 120 37 175 168
2025/20261.159 196 192 289 188 141 66 87 0 0 0 0 0
Totale 2.305