ESSENI, DAVID
 Distribuzione geografica
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Continente #
AS - Asia 1.417
NA - Nord America 835
EU - Europa 372
SA - Sud America 148
AF - Africa 20
OC - Oceania 1
Totale 2.793
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Nazione #
US - Stati Uniti d'America 819
CN - Cina 603
SG - Singapore 395
HK - Hong Kong 138
BR - Brasile 119
KR - Corea 113
VN - Vietnam 81
GB - Regno Unito 79
SE - Svezia 72
RU - Federazione Russa 62
FR - Francia 37
IT - Italia 36
NL - Olanda 25
LT - Lituania 20
IN - India 16
BD - Bangladesh 15
DE - Germania 12
IQ - Iraq 12
AR - Argentina 11
FI - Finlandia 8
ID - Indonesia 8
JP - Giappone 8
MX - Messico 7
PK - Pakistan 6
VE - Venezuela 6
EC - Ecuador 4
TR - Turchia 4
ZA - Sudafrica 4
CA - Canada 3
CL - Cile 3
ES - Italia 3
KE - Kenya 3
SN - Senegal 3
UA - Ucraina 3
UZ - Uzbekistan 3
AT - Austria 2
AZ - Azerbaigian 2
BE - Belgio 2
CO - Colombia 2
CZ - Repubblica Ceca 2
EG - Egitto 2
MA - Marocco 2
PS - Palestinian Territory 2
TH - Thailandia 2
TN - Tunisia 2
TT - Trinidad e Tobago 2
TW - Taiwan 2
AO - Angola 1
AU - Australia 1
BG - Bulgaria 1
BO - Bolivia 1
DO - Repubblica Dominicana 1
DZ - Algeria 1
EE - Estonia 1
ET - Etiopia 1
GH - Ghana 1
GR - Grecia 1
HN - Honduras 1
HR - Croazia 1
IR - Iran 1
JM - Giamaica 1
JO - Giordania 1
KH - Cambogia 1
MT - Malta 1
MY - Malesia 1
NP - Nepal 1
OM - Oman 1
PA - Panama 1
PE - Perù 1
PH - Filippine 1
PL - Polonia 1
PT - Portogallo 1
PY - Paraguay 1
RO - Romania 1
RS - Serbia 1
Totale 2.793
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Città #
Hefei 414
Santa Clara 235
Singapore 195
Hong Kong 138
Seoul 113
Ashburn 109
San Jose 98
London 66
Beijing 42
The Dalles 41
Chicago 25
Kent 25
Lauterbourg 25
Los Angeles 24
Hanoi 23
Ho Chi Minh City 23
Amsterdam 22
Salt Lake City 21
New York 18
Shanghai 17
Dallas 16
Buffalo 15
Moscow 11
Helsinki 8
São Paulo 8
Tokyo 8
Munich 7
Redondo Beach 7
Atlanta 6
Milan 6
Baghdad 5
Brasília 5
Cleveland 5
Detroit 5
Guangzhou 5
Haiphong 5
Paris 5
Tampa 5
Brescia 4
Brooklyn 4
Bures-sur-Yvette 4
Campinas 4
Changsha 4
Council Bluffs 4
Dhaka 4
Jakarta 4
Mexico City 4
Modena 4
Newark 4
Orem 4
Phoenix 4
Rio de Janeiro 4
Arapiraca 3
Belo Horizonte 3
City of London 3
Da Nang 3
Dakar 3
Elk Grove Village 3
Fortaleza 3
Frankfurt am Main 3
Hohhot 3
Kilburn 3
Miami 3
Nairobi 3
Ninh Bình 3
Osasco 3
São Bernardo do Campo 3
Balneário Camboriú 2
Biên Hòa 2
Boituva 2
Boston 2
Brantford 2
Brussels 2
Cairo 2
Can Tho 2
Caracas 2
Changchun 2
Charlotte 2
Chennai 2
Columbus 2
Denver 2
Duhok 2
Faisalabad 2
Gravataí 2
Guayaquil 2
Ha Long 2
Istanbul 2
Jersey City 2
Johannesburg 2
Limeira 2
Loudi 2
Maracaibo 2
Mumbai 2
North Bergen 2
Pelotas 2
Poplar 2
Port of Spain 2
Rivignano 2
Rome 2
Santiago 2
Totale 1.973
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Nome #
Simulations and comparisons of basic analog and digital circuit blocks employing Tunnel FETs and conventional FinFETs 111
Modeling Low and High Field Uniform Transport in Monolayer MoS2 109
Semi-classical transport in MoS2 and MoS2 transistors by a Monte Carlo approach 105
A review of selected topics in physics based modeling for tunnel field-effect transistors 104
Drain Current Improvements in Uniaxially Strained p-MOSFETs: a Multi-Subband Monte Carlo Study 103
Full-Band Quantization Analysis Reveals a Third Valley in Silicon Inversion Layers 102
Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating 101
Linear combination of bulk bands method for investigating the low-dimensional electron gas in nanostructured devices 100
Drain current improvements in uniaxially strained p-MOSFETs: A Multi-Subband Monte Carlo study 99
Pseudo-spectral methods for the efficient simulation of quantization effects in nanoscale MOS transistors 97
Mobility in high-K metal gate UTBB-FDSOI devices: From NEGF to TCAD perspectives 96
Mobility in FDSOI Devices: Monte Carlo and Kubo Greenwood Approaches Compared to NEGF Simulations 93
Stability of Self-Consistent Monte Carlo Simulations: Effects of the Grid Size and of the Coupling Scheme 92
Applicability of Macroscopic Transport Models to Decananometer MOSFETs 92
Mixed Tunnel-FET/MOSFET Level Shifters: A New Proposal to Extend the Tunnel-FET Application Domain 91
A virtual III-V Tunnel FET technology platform for ultra-low voltage comparators and level shifters 90
Editorial: Selected papers from the 8th Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS 2022) 90
Editorial: Letters from the 8th Joint International EUROSOI workshop and International Conference on Ultimate Integration on Silicon 90
Revised Stability Analysis of the Nonlinear Poisson Scheme in Self-Consistent Monte Carlo Device Simulations 89
Improved understanding of metal–graphene contacts 88
Modeling Approaches for Gain, Noise and Time Response of Avalanche Photodiodes for X-Rays Detection 85
Device Modeling 83
A New Model for the Backscatter Coefficient in Nanoscale MOSFETs 82
Theory of Motion at the band crossing points in bulk semiconductor crystals and in inversion layers 81
Comparison of BULK and Ultra-Thin Double Gate SOI MOSFETs for the 65 nm Technology Node: A Monte Carlo Study 79
Effect of the Grid Size on the Stability of Self-Consistent Monte-Carlo Simulations 76
Early assessment of tunnel-FET for energy-efficient logic circuits 76
Failure of the Scalar Dielectric Function Approach for the Screening Modeling in Double-Gate SOI MOSFETs and in FinFETs 76
Modeling and optimization of graphene ballistic rectifiers 73
Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes 67
Full Band and Approximated Solutions of the Schr\"odinger Equation in Silicon Inversion Layers 59
Stability of Self-Consistent Monte-Carlo Simulations: Revised Analysis of Linear and Non-Linear Poisson Schemes 47
Totale 2.826
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Categoria #
all - tutte 13.972
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 13.972
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2023/2024131 0 0 0 0 0 48 11 10 6 3 23 30
2024/20251.015 17 6 2 62 163 171 69 25 120 37 175 168
2025/20261.680 196 192 289 188 141 66 262 55 119 121 51 0
Totale 2.826