We present a simulation framework based on the combination of Monte Carlo transport and Landauer-Buttiker formalism to model and optimize ballistic rectifiers exploiting the long mean-free-path of graphene. The influence on the responsivity (i.e. the induced voltage normalized by the impinging power) of the main geometrical parameters, of bias and of different scattering mechanisms is critically analyzed.
Modeling and optimization of graphene ballistic rectifiers / Truccolo, D.; Boscolo, S.; Esseni, D.; Midrio, M.; Palestri, P.. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - 194:(2022), p. 108314. [10.1016/j.sse.2022.108314]
Modeling and optimization of graphene ballistic rectifiers
Esseni D.;Palestri P.
2022
Abstract
We present a simulation framework based on the combination of Monte Carlo transport and Landauer-Buttiker formalism to model and optimize ballistic rectifiers exploiting the long mean-free-path of graphene. The influence on the responsivity (i.e. the induced voltage normalized by the impinging power) of the main geometrical parameters, of bias and of different scattering mechanisms is critically analyzed.
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