In this work, we present a new model for the backscatter coefficient in nanoscale MOSFETs. The model assumes that only few backscattering events occur, which is likely to hold for devices with channel length in the order of the carrier mean free path. Both elastic and inelastic scattering mechanisms are accounted for. Moreover, the model naturally captures the effect of degeneracy. The model is compared with Monte-Carlo simulations for a broad range of channel lengths, temperatures, and electric fields, obtaining in general a very good agreement.
A New Model for the Backscatter Coefficient in Nanoscale MOSFETs / J. L. P. J., van der Steen; Palestri, Pierpaolo; Esseni, David; R. J. E., Hueting. - (2010), pp. 234-237. (Intervento presentato al convegno Proceedings of the European Solid-State Device Research Conference (ESSDERC) tenutosi a Siviglia (ES) nel 14-16 Sept. 2010) [10.1109/ESSDERC.2010.5618380].
A New Model for the Backscatter Coefficient in Nanoscale MOSFETs
PALESTRI, Pierpaolo;ESSENI, David;
2010
Abstract
In this work, we present a new model for the backscatter coefficient in nanoscale MOSFETs. The model assumes that only few backscattering events occur, which is likely to hold for devices with channel length in the order of the carrier mean free path. Both elastic and inelastic scattering mechanisms are accounted for. Moreover, the model naturally captures the effect of degeneracy. The model is compared with Monte-Carlo simulations for a broad range of channel lengths, temperatures, and electric fields, obtaining in general a very good agreement.
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