Tremendous improvements in the fabrication technology have allowed to scale the physical dimensions of the transistors and also to develop different promising 3-D architectures that may allow continuing Moore’s law. In this paper, we perform a comparative delay analysis of different 3-D device architectures and study the impact of surface roughness and self-heating on the on-current using a comprehensive in-house simulation framework comprising Schrödinger, Poisson, and Boltzmann transport equation solvers and comprising relevant scattering mechanisms and self-heating. Our results highlight that parasitic capacitance can alter the relative ranking of the architectures from delay point of view. We demonstrate that surface roughness can cause architectureand material-dependentcurrent degradation, and hence, it is necessary to account for it in simulation-based benchmarking different architectures.

Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating / Badami, O.; Lizzit, D.; Driussi, F.; Palestri, P.; Esseni, D.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 65:9(2018), pp. 3646-3653. [10.1109/TED.2018.2857509]

Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating

Palestri, P.;Esseni, D.
2018

Abstract

Tremendous improvements in the fabrication technology have allowed to scale the physical dimensions of the transistors and also to develop different promising 3-D architectures that may allow continuing Moore’s law. In this paper, we perform a comparative delay analysis of different 3-D device architectures and study the impact of surface roughness and self-heating on the on-current using a comprehensive in-house simulation framework comprising Schrödinger, Poisson, and Boltzmann transport equation solvers and comprising relevant scattering mechanisms and self-heating. Our results highlight that parasitic capacitance can alter the relative ranking of the architectures from delay point of view. We demonstrate that surface roughness can cause architectureand material-dependentcurrent degradation, and hence, it is necessary to account for it in simulation-based benchmarking different architectures.
2018
65
9
3646
3653
Benchmarking of 3-D MOSFET Architectures: Focus on the Impact of Surface Roughness and Self-Heating / Badami, O.; Lizzit, D.; Driussi, F.; Palestri, P.; Esseni, D.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 65:9(2018), pp. 3646-3653. [10.1109/TED.2018.2857509]
Badami, O.; Lizzit, D.; Driussi, F.; Palestri, P.; Esseni, D.
File in questo prodotto:
File Dimensione Formato  
08424213.pdf

Accesso riservato

Tipologia: Versione pubblicata dall'editore
Dimensione 1.35 MB
Formato Adobe PDF
1.35 MB Adobe PDF   Visualizza/Apri   Richiedi una copia
TED_ArchMatBechmarking_Oves.pdf

Open access

Tipologia: Versione dell'autore revisionata e accettata per la pubblicazione
Dimensione 1.08 MB
Formato Adobe PDF
1.08 MB Adobe PDF Visualizza/Apri
Pubblicazioni consigliate

Licenza Creative Commons
I metadati presenti in IRIS UNIMORE sono rilasciati con licenza Creative Commons CC0 1.0 Universal, mentre i file delle pubblicazioni sono rilasciati con licenza Attribuzione 4.0 Internazionale (CC BY 4.0), salvo diversa indicazione.
In caso di violazione di copyright, contattare Supporto Iris

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11380/1328079
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 11
  • ???jsp.display-item.citation.isi??? 8
social impact